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MITSUBISHI TRANSISTOR MODULES
QM100HY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
QM100HY-H
* * * * *
IC Collector current ........................ 100A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
94 (7) 20
10.5 13 10.5
80 20 27
(7) C 6.5 E C
34
C
E
C
E1 B1
E1 B1 Tab#110, t=0.5
6.5
M5
31
(8)
22.5
LABEL
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100HY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 100 100 620 6 1000 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.96~2.94 20~30 250 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g
--
Mounting torque Mounting screw M6
--
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25C, unless otherwise noted)
Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=100A, IB=1.3A -IC=100A (diode forward voltage) IC=100A, VCE=2V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=300V, IC=100A, IB1=-IB2=2A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 2.0 100 2.0 2.5 1.75 -- 2.0 12 3.0 0.2 0.65 0.075 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100HY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)
200 Tj=25C 10 3 7 5 3 2 10 2 7 5 3 2 VCE=2.0V
DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT IC (A)
IB=2.0A IB=1.0A
160
120
IB=0.6A IB=0.4A IB=0.2A
80
DC CURRENT GAIN hFE
VCE=5.0V
40
0
0
1
2
3
4
5
10 1 7 5 3 Tj=25C 2 Tj=125C 0 10 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
COLLECTOR-EMITTER VOLTAGE
VCE (V)
COLLECTOR CURRENT IC (A)
VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL)
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.0 1.4 1.8 2.2 2.6 3.0
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
10 1 7 5 4 3 2
BASE CURRENT IB (A)
VCE=2.0V Tj=25C
VBE(sat)
SATURATION VOLTAGE
10 0 7 5 VCE(sat) 4 3 IB=1.3A 2 Tj=25C Tj=125C -1 10 2 3 4 5 7 10 1 2 3 4 5 7 10 2
2
BASE-EMITTER VOLTAGE
VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
5 10 2 7 5 3 2 10 1 7 5 3 2
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
VCC=300V IB1=-IB2=2A Tj=25C Tj=125C
4
ton, ts, tf (s)
IC=150A
ts
3 IC=100A 2 IC=50A 1 Tj=25C Tj=125C IC=70A
SWITCHING TIME
0 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1
ton 10 0 tf 7 5 3 2 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
BASE CURRENT IB (A)
COLLECTOR CURRENT
IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100HY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE CURRENT (TYPICAL)
2
REVERSE BIAS SAFE OPERATING AREA
200
COLLECTOR CURRENT IC (A)
SWITCHING TIME
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1
ts, tf (s)
175 Tj=125C 150 125 100 75 50 25 0 0
IB2=-2A IB2=-5A
ts
tf
VCC=300V IC=100A IB1=2.0A
Tj=25C Tj=125C 2 3 4 5 7 10 0 2 3 4 5 7 10 1
100 200 300 400 500 600 700 800
BASE REVERSE CURRENT -IB2 (A)
COLLECTOR-EMITTER VOLTAGE
VCE (V)
FORWARD BIAS SAFE OPERATING AREA
10 3 7 5 3 2 10 2 7 5 3 2 100 tw=50s 100s 90
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR CURRENT IC (A)
SECOND BREAKDOWN AREA
DERATING FACTOR (%)
80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 COLLECTOR DISSIPATION
s 0 50 s 1m s m 10
10 1 7 5 3 2 TC=25C 10 0 NON-REPETITIVE 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
COLLECTOR-EMITTER VOLTAGE
COLLECTOR REVERSE CURRENT -IC (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 -1 2 3 4 5 710 0 0.20
D C
VCE (V)
CASE TEMPERATURE
TC (C)
0.16
Zth (j-c) (C/ W)
0.12
10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0
REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL)
0.08
0.04 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -12 3 4 5 7 10 0
Tj=25C Tj=125C 0 0.4 0.8 1.2 1.6 2.0
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100HY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 1000
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 VCC=300V 5 IB1=-IB2=2A Tj=25C 4 Tj=125C 3 2 10 1 7 5 4 3 2 10 0 10 0 10 1
800 Irr (A), Qrr (c)
Irr
10 0
400
Qrr trr
200
0 10 0
2 3 4 5 7 10 1
2 3 4 5 7 10 2
2 3 4 5 7 10 1
10 -1 2 3 4 5 7 10 2
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT IF (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 4 5 7 1.0
0.8 Zth (j-c) (C/ W)
0.6
0.4
0.2 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s)
Feb.1999
trr (s)
600

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