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| LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode This device is designed for FM tuning, general frequency control and tuning, or any top-of-the-line application requiring back-to-back diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT-23 plastic package for high volume, pick and place assembly requirements. * High Figure of Merit -- Q = 450 (Typ) @ V R = 3.0 Vdc, f = 50 MHz * Guaranteed Capacitance Range * Dual Diodes - Save Space and Reduce Cost * Surface Mount Package * Available in 8 mm Tape and Reel * Monolithic Chip Provides Improved Matching * Hyper Abrupt Junction Process Provides High Tuning Ratio MMBV609LT1 DUAL VOLTAGE VARIABLE CAPACITANCE DIODE 3 1 2 CASE 318-08, STYLE 9 SOT- 23 (TO-236AB) 1 2 3 MAXIMUM RATINGS(EACH DIODE) Rating Reverse Voltage Forward Current Device Dissipation @T A = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ T stg Value 20 100 225 1.8 +125 -55 to +150 Unit Vdc mAdc mW mW/C C C DEVICE MARKING MMBV609LT1=5L ELECTRICAL CHARACTERISTICS(T A=25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR=10Adc) Reverse Voltage Leakage Current (V R=15Vdc) Diode Capacitance (VR=3.0 Vdc,f=1.0MHz) Capacitance Ratio C3/C8 (f=1.0MHz) Figure of Merit (VR=3.0 Vdc, f=50MHz) Symbol V (BR)R IR CT CR Q Min 20 -- 26 1.8 250 Typ -- -- -- -- 450 Max -- 10 32 2.4 -- Unit Vdc nAdc pF -- -- MMBV609LT1-1/2 LESHAN RADIO COMPANY, LTD. MMBV609LT1 TYPICAL CHARACTERISTICS 50 1000 C T , DIODE CAPACITANCE (pF) f = 1.0MHz T A = 25C Q , FIGURE OF MERIT 40 V R =3Vdc T A = 25C 100 30 20 10 0 1 2 3 5 7 10 20 30 50 10 10 100 1000 V R , REVERSE VOLTAGE (VOLTS) f , FREQUENCY ( MHz ) Figure 1. Diode Capacitance Figure 2. Figure of Merit CT ,DIODE CAPACITANCE (NORMALIZED) 1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 -75 -50 -25 0 +25 +50 +75 +100 +125 V R= 3.0Vdc f = 1.0MHz T A , AMBIENT TEMPERATURE (C) Figure 3. Diode Capacitance MMBV609LT1-2/2 |
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