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DISCRETE SEMICONDUCTORS
DATA SHEET
LLE18150X NPN silicon planar epitaxial microwave power transistor
Product specification File under Discrete Semiconductors, SC15 September 1994
Philips Semiconductors
Philips Semiconductors
Product specification
NPN silicon planar epitaxial microwave power transistor
FEATURES * Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR * Interdigitated structure provides high emitter efficiency * Gold metallization realizes very good stability of the characteristics and excellent lifetime * Multicell geometry gives good balance of dissipated power and low thermal resistance * Internal input and output prematching ensures good stability and allows an easier design of wideband circuits. APPLICATION Intended for use in common emitter, class AB amplifiers in CW conditions for professional applications between 1.7 GHz and 2.0 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a FO-229 glued cap metal ceramic flange package, with emitter connected to flange. WARNING Product and environmental safety - toxic materials
Top view
handbook, 4 columns
LLE18150X
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 C in a common emitter class AB amplifier. MODE OF OPERATION Class AB (CW) f (GHz) 1.85 VCE (V) 24 ICQ (A) 0.05 PL1 (W) 12 Gpo (dB) 7.8 C (%) typ. 43 Zi; ZL () see Figs 6 and 7
PINNING - FO-229 PIN 1 2 3 collector base emitter connected to flange DESCRIPTION
1
c b
3
e
2
MAM112
Fig.1 Simplified outline and symbol.
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
September 1994
2
Philips Semiconductors
Product specification
NPN silicon planar epitaxial microwave power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER VCEO VEBO IC Pi Ptot Tstg Tj Tsld Note 1. Up to 0.2 mm from ceramic. PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage DC collector current input power total power dissipation storage temperature junction temperature soldering temperature t 10 s; note 1 f = 1.85 GHz; VCE = 24 V; class AB Tmb = 75 C CONDITIONS open emitter RBE = 220 open base open collector
LLE18150X
MIN. - - - - - - - -65 - -
MAX. 45 30 22 3 3 4 25 +150 200 235
UNIT V V V V A W W C C C
30 P tot (W) 20
MBD741
10
0 0 50 100 150 200 T mb ( o C)
Fig.2 Power derating curve.
September 1994
3
Philips Semiconductors
Product specification
NPN silicon planar epitaxial microwave power transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tj = 100 C
LLE18150X
MAX. 3.6 0.2
UNIT K/W K/W
CHARACTERISTICS Tmb = 25 C unless otherwise specified. SYMBOL ICBO V(BR)CER V(BR)CBO V(BR)EBO hFE PARAMETER collector cut-off current collector-base breakdown voltage emitter-base breakdown voltage DC current gain CONDITIONS IE = 0; VCB = 20 V IC = 10 mA IE = 10 mA IC = 0.5 A; VCE = 3 V - 30 45 3 15 MIN. MAX. 1.5 - - - 100 UNIT mA V V V
collector-emitter breakdown voltage IC = 0 mA; RBE = 220
APPLICATION INFORMATION Microwave performance up to Tmb = 25 C in a common emitter class AB amplifier. MODE OF OPERATION Class AB (CW) f (GHz) 1.85 VCE (V) 24 ICQ (A) 0.05 PL1 (W) 12 typ. 15 Gpo (dB) 7.8 typ. 8.5 C (%) typ. 43 Zi; ZL () see Figs 6 and 7
September 1994
4
Philips Semiconductors
Product specification
NPN silicon planar epitaxial microwave power transistor
LLE18150X
handbook, full pagewidth
30
30
2.0
6.0 2.5
1.0 8.0
3.0 2.5
7.0
2.5
4.0
7.0 5.0
3.0 40 1.0 13.0 0.7 2.0
40 0.7 4.0 17.0 1.0
4.0 3.0 6.0 6.0 2.5
9.0
MBD731
handbook, full pagewidth
C5
V BB
C6
VCC
F1 input L1 L2 C1 C3 C2 C4 output
MBD732
The test circuit is split into two independent halves, each being 30 x 40 mm in size. Dimensions in mm. Substrate: Epsilam 10. Thickness: 0.635 mm. Permittivity: r = 10.
Fig.3 Prematching test circuit board.
September 1994
5
Philips Semiconductors
Product specification
NPN silicon planar epitaxial microwave power transistor
LLE18150X
handbook, full pagewidth
BIAS CIRCUIT
PREMATCHING TEST CIRCUIT VCC
R1 TR1 C5 R2 F1 P1 D1 R3 C7 L1 DUT L2 C6
D2
MEA600
Fig.4 Class AB bias circuit.
List of components (see Figs 3 and 4). COMPONENT TR1 C1, C4 C2, C3 C5, C6 C7 D1 D2 L1 L2 P1 R1 R2 R3 F1 Notes 1. In thermal contact with TR1. 2. In thermal contact with DUT. DESCRIPTION transistor, BDT91 or equivalent DC blocking chip capacitor trimmer capacitor feedthrough bypass capacitor electrolytic capacitor diode BY239 or equivalent; note 1 diode BY239 or equivalent; note 2 4 turns 0.5 mm copper wire; internal diameter = 2 mm 4 turns 0.5 mm copper wire; internal diameter = 2 mm linear potentiometer resistor resistor resistor ferrite bead 4.7 k 100 , 0.25 W 10 k, 0.25 W 56 , 0.25 W Philips tube, 12NC = 4330 030 43081 4.2 x 2.2 x 3.2 mm (4B1) 100 pF 0.5 to 5.0 pF 1500 pF 10 F, >30 V ATC 100A101kp Tekelec 727-1 Erie 1250-003 VALUE ORDERING INFORMATION
September 1994
6
Philips Semiconductors
Product specification
NPN silicon planar epitaxial microwave power transistor
LLE18150X
Input and optimum load impedances. VCE = 24 V; ICQ = 50 mA; Zo = 10 (see Figs 6 and 7); typical values at PL = PL1.
20 PL (W) 16 I CQ = 20 mA 50 mA 100 mA
MBD737
f (GHz) 1.70 1.80 1.85 1.90 2.00
Zi () 4.5 + j8.0 7.5 + j9.0 9.2 + j8.2 9.5 + j6.5 7.0 + j3.0
ZL () 6.2 - j0.5 5.7 - j1.0 4.7 - j1.7 3.9 - j2.2 2.7 - j2.4
12
8
4
0 0 1 2 3 P i (W) 4
VCE = 24 V; f = 1850 MHz.
Fig.5 Load power as a function of input power.
September 1994
7
Philips Semiconductors
Product specification
NPN silicon planar epitaxial microwave power transistor
1 0.5 1.7 GHz 2
LLE18150X
0.2
Zi 2 GHz
5 1.85 GHz 10
+j 0 -j 10 0.2 5 0.2 0.5 2 5 10
0.5 1 VCE = 24 V; Zo = 10 ; ICQ = 50 mA.
2
MBD742
Fig.6 Input impedance as a function of frequency; typical values at PL = PL1
1 0.5 2
0.2
ZL
5 10
+j 0 -j 1.85 GHz 2 GHz 0.2 5 10 0.2 0.5 1.7 GHz 2 5 10
0.5 1 VCE = 24 V; Zo = 10 ; ICQ = 50 mA.
2
MBD743
Fig.7 Optimum load impedance as a function of frequency; typical values at PL = PL1. September 1994 8
Philips Semiconductors
Product specification
NPN silicon planar epitaxial microwave power transistor
PACKAGE OUTLINE
LLE18150X
19.1 max 0.13 max 2.3 2.0 seating plane 14.22 1 6.5 max 1.7 max
4.8 max
0.25 M
4.5 min
O 3.3 3
6.5 6.2
2 1.7 max
4.5 min
MBB945
Dimensions in mm. Torque on screws: max. 0.5 Nm. Recommended screw: M3.
Fig.8 FO-229.
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1994 9 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.

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