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| Semiconductor IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly developmental type TA17451. July 1998 Features * 0.4A and 0.5A, 60V and 100V * rDS(ON) = 2.4 and 3.2 * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Majority Carrier Device * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol D Ordering Information PART NUMBER IRFD1Z0 IRFD1Z1 IRFD1Z2 IRFD1Z3 PACKAGE HEXDIP HEXDIP HEXDIP HEXDIP BRAND IRFD1Z0 IRFD1Z1 IRFD1Z2 IRFD1Z3 G S NOTE: When ordering, use the entire part number. Packaging HEXDIP DRAIN GATE SOURCE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1998 File Number 2313.1 5-1 IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFD1Z0 100 100 0.5 4.0 20 1.0 0.008 -55 to 150 300 260 IRFD1Z1 60 60 0.5 4.0 20 1.0 0.008 -55 to 150 300 260 IRFD1Z2 100 100 0.4 3.2 20 1.0 0.008 -55 to 150 300 260 IRFD1Z3 60 60 0.4 3.2 20 1.0 0.008 -55 to 150 300 260 UNITS V V A A V W W/oC oC oC oC Drain to Source (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . .VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor (See Figure 1) . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . Tpkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250A, VGS = 0V (See Figure 9) 100 60 VGS(TH) IDSS VGS = VDS, ID = 250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC 2.0 4.0 25 250 V V V A A MIN TYP MAX UNITS Drain to Source Breakdown Voltage IRFD1Z0, IRFD1Z2 IRFD1Z1, IRFD1Z3 Gate Threshold Voltage Zero Gate Voltage Drain Current On-State Drain Current (Note 2) IRFD1Z0, IRFD1Z1 IRFD1Z2, IRFD1Z3 Gate to Source Leakage Current Drain to Source On Resistance (Note 2) IRFD1Z0, IRFD1Z1 IRFD1Z2, IRFD1Z3 Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain "Miller" Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (See Figure 6) 0.5 0.4 - 100 A A nA S ns ns ns ns nC nC nC pF pF pF IGSS rDS(ON) VGS = 20V ID = 0.25A, VGS = 10V (See Figures 7, 8) - gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS VGS = 0V, VDS = 25V, f = 1MHz (Figure 10) VDS > ID(ON) x rDS(ON)MAX, ID = 0.25A VDD 0.5 x Rated BVDSS, ID = 0.25A, RG = 50 (Figures 14, 15, 16) RL = 198 for BVDSS = 100V RL = 118 for BVDSS = 60V MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = 10V, ID = 1.2A, VDS = 0.8 x Rated BVDSS (Figures 13, 16, 17) Gate Charge is Essentially Independent of Operating Temperature 0.25 - 2.2 2.8 0.35 10 15 15 10 2.0 1.0 1.0 50 20 5 2.4 3.2 20 25 25 20 3.0 - 5-2 IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 Electrical Specifications PARAMETER Internal Drain Inductance TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL LD TEST CONDITIONS Measured From The Drain Lead, 2mm (0.08in) From Package to Center of Die Measured From The Source Lead, 2mm (0.08in) From Header to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances D LD G LS S MIN - TYP 4.0 MAX - UNITS nH Internal Source Inductance LS - 6.0 - nH Thermal Resistance Junction to Ambient RJA Free Air Operation - - 120 oC/W Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current IRFD1Z0, IRFD1Z1 IRFD1Z2, IRFD1Z3 Pulse Source to Drain Current IRFD1Z0, IRFD1Z1 IRFD1Z2, IRFD1Z3 Source to Drain Diode Voltage (Note 2) IRFD1Z0, IRFD1Z1 IRFD1Z2, IRFD1Z3 Reverse Recovery Time Reverse Recovery Charge NOTES: 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. trr QRR VSD TA = 25oC, ISD = 0.5A, VGS = 0V TA = 25oC, ISD = 0.4A, VGS = 0V TJ = 150oC, ISD = 0.5A, dISD/dt = 100A/s TJ = 150oC, ISD = 0.5A, dISD/dt = 100A/s 100 0.2 1.4 1.3 V V ns C S SYMBOL ISD TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode G D MIN TYP MAX UNITS - - 0.5 0.4 A A ISDM - - 4.0 3.2 A A Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 Unless Otherwise Specified 0.5 ID, DRAIN CURRENT (A) 0.4 IRFD1Z0, IRFD1Z1 0.3 IRFD1Z2, IRFD1Z3 0.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 TA , AMBIENT TEMPERATURE (oC) 150 0.1 0 25 50 75 100 125 TA , AMBIENT TEMPERATURE (oC) 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs AMBIENT TEMPERATURE 5-3 IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 Typical Performance Curves 10 IRFD1Z0, IRFD1Z1 ID, DRAIN CURRENT (A) IRFD1Z2, IRFD1Z3 1 IRFD1Z0, IRFD1Z1 IRFD1Z2, IRFD1Z3 0.1 100s 1ms o 0.01 TJ = 150 C MAX SINGLE PULSE Unless Otherwise Specified (Continued) 2.0 10V 10s ID, DRAIN CURRENT (A) OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1.6 8V 1.2 7V 0.8 VGS = 6V 0.4 5V 4V 0 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 PULSE DURATION = 80s 9V IRFD1Z1, IRFD1Z3 10ms DC IRFD1Z0, IRFD1Z2 1000 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. OUTPUT CHARACTERISTICS PULSE DURATION = 80s IDS(ON), DRAIN TO SOURCE CURRENT (A) 2.0 1.2 1.0 0.8 0.6 0.4 0.2 0 0 2 4 6 8 10 12 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80s VDS > ID(ON) x rDS(ON)MAX TJ = -55oC TJ = 25oC TJ = 125oC 10V 9V 1.6 ID, DRAIN CURRENT (A) 8V 1.2 7V 0.8 VGS = 6V 0.4 5V 4V 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 FIGURE 5. SATURATION CHARACTERISTICS FIGURE 6. TRANSFER CHARACTERISTICS 8 PULSE DURATION = 2s rDS(ON), DRAIN TO SOURCE ON RESISTANCE () VGS = 10V NORMALIZED DRAIN TO SOURCE ON RESISTANCE 2.5 VGS = 10V, ID = 0.5A 2.0 6 1.5 4 VGS = 20V 2 1.0 0.5 0 0 1 2 ID, DRAIN CURRENT (A) 3 4 0 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) NOTE: Heating effect of 2s pulse is minimal. FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 8. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 5-4 IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 Typical Performance Curves 1.25 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE Unless Otherwise Specified (Continued) 100 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS = CDS + CGD 1.15 C, CAPACITANCE (pF) 80 1.05 60 CISS 40 COSS 20 CRSS 0.95 0.85 0.75 -40 0 40 80 120 TJ , JUNCTION TEMPERATURE (oC) 160 0 0 10 30 40 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 0.6 0.5 0.4 TJ = -55oC TJ = 25oC TJ = 125oC 0.3 0.2 ISD, SOURCE TO DRAIN CURRENT (A) PULSE DURATION = 80s 10 gfs, TRANSCONDUCTANCE (S) 1.0 0.1 0 0 0.25 0.50 0.75 1.0 ID , DRAIN CURRENT (A) 1.25 1.5 TJ = 150oC 0.1 TJ = 25oC 0 0.4 0.8 1.2 1.6 VSD, SOURCE TO DRAIN VOLTAGE (V) 2.0 FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE 20 ID = 1.2A VGS, GATE TO SOURCE (V) 15 VDS = 20V VDS = 50V 10 VDS = 80V IRFD1Z0, IRFD1Z2 5 0 0 2 3 1 QG , TOTAL GATE CHARGE (nC) 4 FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE VOLTAGE 5-5 IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 Test Circuits and Waveforms tON td(ON) tr RL VDS 90% tOFF td(OFF) tf 90% + RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 14. SWITCHING TIME TEST CIRCUIT FIGURE 15. RESISTIVE SWITCHING WAVEFORMS CURRENT REGULATOR VDS (ISOLATED SUPPLY) VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS 12V BATTERY 0.2F 50k 0.3F G DUT 0 IG(REF) 0 IG CURRENT SAMPLING RESISTOR S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0 FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 17. GATE CHARGE WAVEFORMS 5-6 |
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