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| Ordering number:ENN6092 TR : NPN Silicon Epitaxial Planar Transistor SBD : Schottky Barrier Diode CPH5703 DC/DC Converter Applications Features * Composite type with a NPN transistor and a Schottky barrier diode contained in one package facilitating high-density mounting. * The CPH5703 consists of two chips encapsulated in a package which are equivalent to the CPH3205 and the SB05-05CP, respectively. * Ultrasmall-sized package permitting applied sets to be made small and slim (0.9mm). Package Dimensions unit:mm 2156 [CPH5703] 2.9 5 4 3 0.6 1 0.95 2 0.4 0.6 1.6 2.8 0.05 Specifications Absolute Maximum Ratings at Ta = 25C Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Output Current Surge Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle VCBO VCEO VEBO IC ICP IB PC Tj Tstg Symbol Conditions 0.4 1 : Cathode 2 : Collector 3 : Base 4 : Emitter 5 : Anode SANYO : CPH5 0.2 0.7 0.9 Ratings 60 50 6 3 6 600 0.2 0.15 Unit V V V A A mA W C C V V mA A C C Mounted on a ceramic board (600mm2x0.8mm) 0.9 150 -55 to +125 50 55 500 5 -55 to +125 -55 to +125 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71299TS (KOTO) TA-1726 No.6092-1/5 CPH5703 Electrical Characteristics at Ta = 25C Parameter [TR] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Turn-OFF Time [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance VR VF IR C trr Rthj-a IR=200A IF=500mA VR=25V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. Mounted on a ceramic board (600mm2x0.8mm) 22 10 151 50 0.55 50 V V A pF ns C/W ICBO IEBO hFE fT Cob VCE(sat)1 VCE(sat)2 VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=100mA VCE=10V, IC=500mA VCB=10V, f=1MHz IC=1.0A, IB=50mA 200 380 13 80 140 0.9 60 50 6 35 300 22 120 210 1.2 1 1 560 MHz pF mV mV V V V V ns ns ns A A Symbol Conditions Ratings min typ max Unit IC=2.0A, IB=100mA VBE(sat) IC=1.0A, IB=50mA V(BR)CBO IC=10A, IE=0 V(BR)CEO IC=1mA, RBE= V(BR)EBO ton tstg tf IE=10A, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Electrical Connection (Top view) 5 4 3 1 : Cathode 2 : Collector 3 : Base 4 : Emitter 5 : Anode 1 2 Switching Time Test Circuit (TR) I B1 PW=20s D.C.1% I NPUT RB 50 VR + 100F + 470F RL I B2 OUTPUT 10IB1=-10IB2=IC=1A (For PNP, the polarity is reversed.) (SBD) VBE=-5V VCC=25V 100mA Duty10% 10s 50 100 10 10mA -5V 100mA trr No.6092-2/5 CPH5703 5.0 I C - VCE A 100m [TR] 80mA 2.0 1.8 I C - VCE 8mA [TR] Collector Current, IC - A Collector Current, IC - A 4.0 60mA 40mA 7mA 6mA 1.6 1.4 1.2 1.0 0.8 0.6 3.0 5mA 20mA 2.0 4mA 3mA 2mA 10mA 5mA 1.0 0.4 0.2 1mA 0 IB=0 0 0.4 0.8 1.2 1.6 2.0 0 IB=0 0 2 4 6 8 10 12 14 16 18 20 Collector-to-Emitter Voltage, VCE - V 3.2 2.8 Collector-to-Emitter Voltage, VCE - V [TR] 1000 7 5 I C - VBE VCE=2V hFE - I C [TR] VCE=2V Collector Current, IC - A DC Current Gain, hFE 2.4 2.0 1.6 Ta=75C 3 2 -25C 100 7 5 3 2 25C 0.8 0.4 0 Ta=7 5C 25C -25C 1.2 0 0.2 0.4 0.6 0.8 1.0 1.2 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 Base-to-Emitter Voltage, VBE - V Collector Current, IC - A [TR] 100 7 1000 fT - IC Cob - VCB [TR] f=1MHz VCE =10V Output Capacitance, Cob - pF Gain-Bandwidth Product, f T - MHz 7 5 3 2 5 3 2 100 7 5 3 2 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 10 7 5 3 2 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC - A 5 Collector-to-Base Voltage, VCB - V [TR] IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) - mV 5 3 2 VCE(sat) - I C VCE(sat) - I C [TR] IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) - mV 3 =7 5 Ta 25 C 2 C -2 100 7 5 3 2 100 7 5 3 2 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 -2 5 C 2 3 = Ta C 75 5 C 25 C 5 Collector Current, IC - A Collector Current, IC - A No.6092-3/5 CPH5703 3 2 VBE(sat) - I C [TR] IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) - V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO ICP IC [TR] 1m DC s 50 0 s 10 s 0 Collector Current,IC - A 1.0 7 5 Ta=75C 10 op era tio 0m 10 s ms -25C 25C n 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 0.01 Ta=25C Single pulse Mounted on a ceramic board(600mm2x0.8mm) 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 Collector Current, IC - A 1.0 0.9 Collector-to-Emitter Voltage, VCE - V [TR] 2 1.0 7 5 3 2 0.1 7 5 PC - Ta I F - VF [SBD] Collector Dissipation, PC - W 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 on a ce ram ic 25C ) 0.01 7 5 140 160 3 0 60 80 100 120 0.1 Ta= m m 0.2 0.3 -25C 0.4 75C .8 2 125 C bo ard (60 0m m2 x0 Forward Current, IF - A M ou nte d 3 0.5 0.6 0.7 Ambient Temperature,Ta - C 3 2 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 Forward Voltage, VF - V [SBD] 2 I R - VR Ta=125C 100C 75C 50C C - VR [SBD] f=1MHz Interterminal Capacitance, C - pF 40 50 60 100 7 5 3 2 Reverse Current, IR - A 25C 10 7 5 3 7 0 10 20 30 1.0 2 3 5 7 10 2 3 5 7 100 Reverse Voltage, VR - V 7 Reverse Voltage, VR - V IS - t [SBD] Current waveform 50Hz sine wave Is Surge Forward Current, IS (Peak) - A 6 5 20ms t 4 3 2 1 0 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Time, t - s No.6092-4/5 CPH5703 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 1999. Specifications and information herein are subject to change without notice. PS No.6092-5/5 |
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