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| DISCRETE SEMICONDUCTORS DATA SHEET BFT25A NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 December 1997 Philips Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES * Low current consumption (100 A - 1 mA) * Low noise figure * Gold metallization ensures excellent reliability. DESCRIPTION The BFT25A is a silicon npn transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up to 2 GHz. The transistor is encapsulated in a 3-pin plastic SOT23 envelope. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM F PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure up to Ts = 165 C; note 1 IC = 0.5 mA; VCE = 1 V IC = 1 mA; VCE = 1 V; Tamb = 25 C; f = 500 MHz IC = 0.5 mA; VCE = 1 V; Tamb = 25 C; f = 1 GHz = opt; IC = 0.5 mA; VCE = 1 V; Tamb = 25 C; f = 1 GHz = opt; IC = 1 mA; VCE = 1 V; Tamb = 25 C; f = 1 GHz Note 1. Ts is the temperature at the soldering point of the collector tab. open emitter open base CONDITIONS MIN. - - - - 50 3.5 - - - TYP. - - - - 80 5 15 1.8 2 1 Top view BFT25A PINNING PIN 1 2 3 base emitter collector fpage DESCRIPTION Code: V10 3 2 MSB003 Fig.1 SOT23. MAX. 8 5 6.5 32 200 - - - - UNIT V V mA mW GHz dB dB dB December 1997 2 Philips Semiconductors Product specification NPN 5 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Ts = 165 C; note 1 CONDITIONS open emitter open base open collector - - - - - -65 - MIN. 8 5 2 6.5 32 150 175 MAX. BFT25A UNIT V V V mA mW C C THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE fT Cre GUM F PARAMETER collector cut-off current DC current gain transition frequency feedback capacitance maximum unilateral power gain (note 1) noise figure CONDITIONS IE = 0; VCB = 5 V IC = 0.5 mA; VCE = 1 V IC = 1 mA; VCE = 1 V; Tamb = 25 C; f = 500 MHz IC = ic = 0; VCB = 1 V; f = 1 MHz IC = 0.5 mA; VCE = 1 V; Tamb = 25 C; f = 1 GHz = opt; IC = 0.5 mA; VCE = 1 V; Tamb = 25 C; f = 1 GHz = opt; IC = 1 mA; VCE = 1 V; Tamb = 25 C; f = 1 GHz Note 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM S 21 = 10 log ------------------------------------------------------------- dB. 2 2 1 - S 11 1 - S 22 2 PARAMETER from junction to soldering point (note 1) THERMAL RESISTANCE 260 K/W MIN. TYP. MAX. UNIT - 50 3.5 - - - - - 80 5 0.3 15 1.8 2 50 200 - 0.45 - - - GHz pF dB dB dB nA December 1997 3 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFT25A MBG247 handbook,40 halfpage handbook, halfpage 100 MCD138 P tot (mW) 30 h FE 80 60 20 40 10 20 0 0 50 100 150 Ts (oC) 200 0 10 3 10 2 10 1 1 I C (mA) 10 VCE = 1 V. Fig.2 Power derating curve. Fig.3 DC current gain as a function of collector current. 0.4 handbook, halfpage C re (pF) 0.3 MCD103 handbook, halfpage 6 MCD140 fT (GHz) 4 0.2 2 0.1 0 0 1 2 3 4 5 VCB (V) 0 0 1 2 3 I C (mA) 4 Ic = ic = 0; f = 1 MHz. VCE = 1 V; Tamb = 25 C; f = 500 MHz. Fig.4 Feedback capacitance as a function of collector-base voltage. Fig.5 Transition frequency as a function of collector current. December 1997 4 Philips Semiconductors Product specification NPN 5 GHz wideband transistor In Figs 6 to 9, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. handbook,20 halfpage handbook,25 halfpage MCD104 BFT25A MCD105 gain (dB) 15 G UM gain (dB) 20 G UM 15 10 MSG MSG 10 5 5 0 0 0 0 0.5 1.0 1.5 I C (mA) VCE = 1 V; f = 500 MHz. VCE = 1 V; f = 1 GHz. 2.0 0.5 1.0 1.5 I C (mA) 2.0 Fig.6 Gain as a function of collector current. Fig.7 Gain as a function of collector current. handbook,50 halfpage MCD106 gain (dB) handbook,50 halfpage MCD107 gain (dB) 40 G UM 40 G UM 30 30 MSG 20 MSG 20 10 G max 0 10 10 2 10 G max 10 10 2 10 3 f (MHz) 10 4 0 10 3 f (MHz) 10 4 VCE = 1 V; Ic = 0.5 mA. VCE = 1 V; Ic = 1 mA. Fig.8 Gain as a function of frequency. Fig.9 Gain as a function of frequency. December 1997 5 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFT25A handbook, halfpage 4 MCD145 handbook, halfpage 4 MCD146 F (dB) 3 f = 2 GHz F (dB) 3 1 GHz 500 MHz 1 mA 2 0.5 mA IC = 2 mA 2 1 1 0 10-1 1 IC (mA) 10 0 102 103 f (MHz) 104 VCE = 1 V. VCE = 1 V. Fig.10 Minimum noise figure as a function of collector current. Fig.11 Minimum noise figure as a function of frequency. 1 f (MHz) 500 VCE (V) 1 IC (mA) 1 0.2 0.5 pot. unst. region 2 6 dB 4 dB 2.5 dB 5 10 10 stability circle Noise Parameters Fmin (dB) 1.9 Gamma (opt) (mag) 0.79 (ang) 4 Rn/50 2.5 +j 0 -j 0.2 0.5 MSG 14.5 dB 1 2 5 10 5 OPT Fmin = 1.9 dB 0.2 13 dB 11 dB 0.5 1 Zo = 50 . Average gain parameter: MSG = 14.5 dB. 2 MCD108 Fig.12 Noise circle figure. December 1997 6 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFT25A 1 f (MHz) 1000 VCE (V) 1 IC (mA) 1 0.2 0.5 pot. unst. region 2 8 dB 4 dB 3 dB Noise Parameters Fmin (dB) 2 Gamma (opt) (mag) 0.74 (ang) 8 Rn/50 2.6 +j stability circle 5 10 0 -j 0.2 0.5 MSG 11.2 dB 10 dB 1 2 5 10 10 5 OPT Fmin = 2 dB 0.2 8 dB 0.5 1 Zo = 50 . Average gain parameter: MSG = 11.2 dB. 2 MCD109 Fig.13 Noise circle figure. f (MHz) 2000 VCE (V) 1 IC (mA) 1 pot. unst. region 0.5 MSG 7.7 dB 1 stability circle 2 Noise Parameters 0.2 Fmin (dB) 2.4 Gamma (opt) (mag) 0.72 (ang) 26 Rn/50 +j 0.2 OPT 7 dB Fmin = 2.4 dB 0.5 1 2 3 dB 5 4 dB 5 dB 10 5 10 1.7 -j 0 10 5 0.2 6 dB 0.5 1 2 MCD110 Zo = 50 . Average gain parameter: MSG = 7.7 dB. Fig.14 Noise circle figure. December 1997 7 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFT25A handbook, full pagewidth 1 0.5 2 0.2 5 10 +j 0 -j 0.2 0.5 1 3 GHz 2 5 10 40 MHz 10 5 0.2 0.5 1 VCE = 1 V; IC = 1 mA. Zo = 50 . 2 MCD111 Fig.15 Common emitter input reflection coefficient (S11). handbook, full pagewidth 90 135 45 3 GHz 180 5 40 MHz 4 3 2 1 0 -135 -45 -90 VCE = 1 V; IC = 1 mA. MCD112 Fig.16 Common emitter forward transmission coefficient (S21). December 1997 8 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFT25A handbook, full pagewidth 90 135 3 GHz 45 180 0.5 40 MHz 0.4 0.3 0.2 0.1 0 -135 -45 -90 VCE = 1 V; IC = 1 mA. MCD114 Fig.17 Common emitter reverse transmission coefficient (S12). handbook, full pagewidth 1 0.5 2 0.2 5 10 +j 0 -j 0.2 0.5 1 2 5 10 40 MHz 10 0.2 3 GHz 5 0.5 1 VCE = 1 V; IC = 1 mA. Zo = 50 . 2 MCD113 Fig.18 Common emitter output reflection coefficient (S22). December 1997 9 Philips Semiconductors Product specification NPN 5 GHz wideband transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads BFT25A SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 December 1997 10 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BFT25A This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1997 11 |
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