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| SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 OCTOBER 1995 7 BCX41 2 PARTMARKING DETAIL EK 1 3 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER SYMBOL VCES VCEO VEBO ICM IC IB PTOT Tj:Tstg VALUE 125 125 5 1 800 100 330 -55 to +150 UNIT V V V A mA mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. 100 10 10 75 100 0.9 1.4 25 63 40 100 12 A A A Collector-Base Cut-Off ICES Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage ICEX IEBO VCE(sat) VBE(sat) nA VCE =100V VCE =100V, Tamb =150C VCE =100V,VBE=0.2V,Tamb =85C VCE=100V,VBE=0.2V, Tamb=125C VEB =4V IC =300mA, IB =30mA * IC =300mA, IB =30mA * IC =100A, VCE =1V IC =100mA, VCE =1V * IC =200mA, VCE =1V * nA V V Static Forward hFE Current Transfer Ratio Transition Frequency Output Capacitance fT Cobo MHz IC =10mA, VCE =5V f =20MHz pF VCB =10V, IE=Ie=0, f =1MHz * Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2% 3 - 33 |
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