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NJG1103F1
1.5/1.9GHz LOW NOISE AMPLIFIER GaAs MMIC
nGENERAL DESCRIPTION NJG1103F1 is a Low Noise Amplifier GaAs MMIC designed for 1.5GHz and 1.9GHz band digital cellular phone and Japanese PHS handsets. This amplifier provides low noise figure, high gain and high IP3 operated by single low positive power supply. This amplifier can be tuned to wide frequency point. (Best for 1.5GHz or 1.9GHz) Small package of MTP6-1 is adopted. nPACKAGE OUTLINE
NJG1103F1
nFEATURES lLow voltage operation lLow current consumption lHigh small signal gain lLow Noise Figure lHigh Input IP3 lHigh Output IP3 lPackage nPIN CONFIGURATION F1 TYPE (Top View)
+2.7V typ. 3mA typ. 16dB typ. @f=1.489GHz 14dB typ. @f=1.9GHz 1.2dB typ. @f=1.489GHz 1.4dB typ. @f=1.9GHz -4dBm typ. @f=1.489+1.4891GHz -3dBm typ. @f=1.9+1.9001GHz +12dBm typ. @f=1.489+1.4891GHz +11dBm typ. @f=1.9+1.9001GHz MTP6-1 (Mount Size: 2.8 x 2.9 x 1.2mm)
1
6
Pin connection
2
5
1.LNAOUT 2.EXTIND 3.GND 4.GND 5.GND 6.LNAIN
3
4
Note:
is package orientation mark.
-1-
NJG1103F1
nABSOLUTE MAXIMUM RATINGS PARAMETER Drain Voltage Input Power Power Dissipation Operating Temperature Storage Temperature SYMBOL VDD Pin PD Topr Tstg VDD=2.7V CONDITIONS (Ta=+25C, Zs=Zl=50) RATINGS UNITS 5.0 +10 150 -40~+85 -55~+125 V dBm mW C C
nELECTRICAL CHARACTERISTICS 1 (1.5GHz Band) (VDD=2.7V, f=1.489GHz, Ta=+25C, Zs=Zl=50, Circuit: Application 1) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Frequency Drain Voltage Operating Current Small Signal Gain Gain Flatness Noise Figure Pout at 1dB Gain Compression point Input 3rd Order Intercept Point LNAIN Port VSWR LNAOUT Port VSWR freq1 VDD IDD Gain Gflat NF P-1dB IIP3 VSWRi VSWRo f=1.489+1.4891GHz RF OFF f=1.47~1.52GHz 1.470 2.5 14.0 -6.0 -7.0 1.489 2.7 3.0 16.0 0.5 1.2 -2.0 -4.0 2.0 2.0 1.520 4.5 3.8 18.0 1.0 1.4 3.0 3.0 GHz V mA dB dB dB dBm dBm
nELECTRICAL CHARACTERISTICS 2 (1.9GHz Band) (VDD=2.7V, f=1.9GHz, Ta=+25C, Zs=Zl=50, Circuit: Application 2) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Frequency freq2 1.89 1.90 1.92 GHz Drain Voltage VDD 2.5 2.7 4.5 V Operating Current IDD RF OFF 3.0 3.8 mA Small Signal Gain Gain Flatness Noise Figure Pout at 1dB Gain Compression point Input 3rd Order Intercept Point LNAIN Port VSWR LNAOUT Port VSWR Gain Gflat NF P-1dB IIP3 VSWRi VSWRo f=1.9+1.9001GHz f=1.89~1.92GHz 12.0 -4.5 -6.0 14.0 0.5 1.4 -0.5 -3.0 2.0 2.0 16.0 1.0 1.6 3.0 3.0 dB dB dB dBm dBm
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NJG1103F1
nTYPICAL CHARACTERISTICS
(V =2.7V,I =3.0mA)
2.6 2.4 2.2 2
DD DD
(1.5GHz Band)
NF,Gain vs.frequency
20 25 20 15 18 16
S21,S11,S22,S12 vs. frequency
(V =2.7V,I =3.0mA)
DD DD
50 40 30
Gain
S21,S11,S22(dB)
14
10 5 0 -5 -10 -15 -20 -25 0.5 0.75 1 1.25 1.5 1.75
S21 S22
20
Gain(dB)
1.6 1.4 1.2 1 0.8 0.6
10 8 6
0 -10
S11 S12
2 2.25
-20 -30 -40 -50 2.5
NF
4 2
0 1.4 1.42 1.44 1.46 1.48 1.5 1.52 1.54 1.56 1.58 1.6
frequency(GHz)
frequency(GHz)
Pin vs. Pout
(V =2.7V,I =3.0mA,freq=1.489GHz)
10 5 0
DD DD
Pin vs. Pout,IM3
(V =2.7V,I =3.0mA,f=1489+1489.1MHz)
10 0 -10
DD DD
Pout
Pout,IM3(dBm)
Pout(dBm)
-5 -10 -15 -20 -25 -30 -40
P-1dB=-1.1dBm
-20 -30 -40 -50 -60
IM3
IIP3=-3.8dBm
-35 -30 -25 -20 -15 -10 -5 0 -70 -40 -35 -30 -25 -20 -15 -10 -5 0
Pin(dBm)
Pin(dBm)
Gain vs. V
17
DD
1.2
NF,I
DD
vs. V
DD
3.4
( f=1.489GHz )
( f=1.489GHz )
16.5 1.1 3.3
Gain(dB)
16
NF NF(dB) I (mA)
1 3.2
15.5 15
S12(dB)
DD
NF(dB)
1.8
12
10
0.9
3.1
14.5
0.8
3
I
14 2.5 3 3.5 4
DD
DD
4.5
5
V (V)
0.7 2.5
2.9 3 3.5 4
DD
4.5
5
V (V)
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NJG1103F1
nTYPICAL CHARACTERISTICS (1.5GHz Band)
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NJG1103F1
nTYPICAL CHARACTERISTICS (1.5GHz Band)
S21 vs. frequency(~20GHz)
(V =2.7V,I =3.0mA)
25 20 15 10
DD DD
S12 vs. frequency(~20GHz)
(V =2.7V,I =3.0mA)
50 40 30 20
DD DD
S21(dB)
5 0 -5 -10 -15 -20 -25 0 2 4 6 8 10 12 14 16 18 20
S12(dB)
10 0 -10 -20 -30 -40 -50 0 2 4 6 8 10 12 14 16 18 20
frequency(GHz)
frequency(GHz)
S11 vs. frequency(~20GHz)
25 20 15 10
S22 vs. frequency(~20GHz)
25 20 15 10
(VDD =2.7V,IDD =3.0mA)
(VDD =2.7V,IDD =3.0mA)
S11(dB)
5 0 -5 -10 -15 -20 -25 0 2 4 6 8 10 12 14 16 18 20
S22(dB)
5 0 -5 -10 -15 -20 -25 0 2 4 6 8 10 12 14 16 18 20
frequency(GHz)
frequency(GHz)
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NJG1103F1
nTYPICAL CHARACTERISTICS Scattering Parameter Table 1 VDD=2.7V, IDD=3.0mA, Zo=50 S11 S21 Freq mag ang mag ang (GHz) (units) (deg) (units) (deg) 0.1 1.000 -3.577 0.030 -96.974 0.2 1.000 -7.804 0.008 29.498 0.3 1.000 -11.749 0.017 -17.030 0.4 1.000 -15.677 0.039 -22.484 0.5 1.000 -18.892 0.069 -35.493 0.6 1.000 -22.855 0.105 -43.917 0.7 0.989 -25.943 0.148 -52.340 0.8 1.000 -29.192 0.211 -60.102 0.9 0.967 -32.626 0.283 -68.097 1.0 0.978 -34.942 0.384 -76.173 1.1 0.952 -38.109 0.517 -84.022 1.2 0.958 -40.122 0.721 -92.837 1.3 0.939 -42.825 1.026 -103.156 1.4 0.944 -45.403 1.595 -118.935 1.5 0.912 -49.324 2.620 -147.296 1.6 0.848 -51.073 3.159 163.534 1.7 0.835 -48.490 2.335 124.924 1.8 0.854 -48.500 1.669 105.980 1.9 0.859 -49.077 1.305 94.208 2.0 0.856 -49.978 1.080 86.597 2.1 0.858 -50.862 0.930 79.499 2.2 0.843 -51.565 0.827 74.248 2.3 0.843 -52.644 0.752 69.058 2.4 0.825 -53.066 0.693 65.124 2.5 0.823 -54.104 0.651 60.824 2.6 0.806 -54.425 0.618 56.840 2.7 0.805 -55.530 0.592 52.933 2.8 0.793 -56.240 0.567 49.451 2.9 0.783 -57.285 0.550 45.760 3.0 0.778 -58.456 0.536 41.775 S12 mag ang (units) (deg) 0.000 -28.893 0.001 123.060 0.001 90.574 0.001 61.254 0.002 70.970 0.002 68.009 0.002 71.027 0.002 52.546 0.001 54.258 0.001 65.410 0.001 -172.907 0.001 -143.350 0.004 -145.335 0.008 -153.556 0.017 -174.933 0.026 141.392 0.023 107.004 0.018 92.352 0.015 84.686 0.014 83.498 0.013 82.364 0.012 82.389 0.012 82.449 0.012 84.137 0.011 87.269 0.012 89.464 0.012 91.483 0.013 93.498 0.013 92.174 0.013 94.705 S22 mag (units) 1.000 1.000 1.000 1.000 1.000 1.000 0.999 0.999 0.993 0.992 0.990 0.979 0.960 0.893 0.647 0.117 0.638 0.834 0.896 0.933 0.941 0.958 0.959 0.969 0.967 0.975 0.974 0.980 0.975 0.980 (1.5GHz Band)
ang (deg) -3.994 -8.157 -11.932 -15.939 -19.427 -23.659 -27.163 -31.190 -34.941 -39.139 -43.543 -48.600 -55.801 -67.092 -88.575 -8.962 -2.204 -16.766 -24.947 -30.122 -33.659 -36.464 -38.653 -40.685 -42.276 -44.085 -45.755 -47.284 -48.847 -50.377
4
3 8.2nH 1000pF VDD
5
2
S11
6 Ref.
1 Ref.
S22
Scattering Parameter Evaluation Circuit
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NJG1103F1
nTYPICAL CHARACTERISTICS
(V =2.7V,I =3.0mA)
2.6 2.4 2.2 2
DD DD
(1.9GHz Band)
NF,Gain vs.frequency
20 18 16 14 12 10 25 20 15
S21,S11,S22,S12 vs. frequency
(V =2.7V,I =3.0mA)
DD DD
50 40 30
S21,S11,S22(dB)
Gain
10 5 0 -5 -10 -15 -20 -25 1 1.25 1.5 1.75 2 2.25
S21 S22
20
NF(dB)
1.6 1.4 1.2 1 0.8 0.6 1.8 1.82 1.84 1.86 1.88 1.9 1.92 1.94 1.96 1.98 2
0 -10
NF
8 6 4 2 0
S11
-20 -30
S12
2.5 2.75 3
-40 -50
frequency(GHz)
frequency(GHz)
Pin vs. Pout
(V =2.7V,I =3.0mA,freq=1.9GHz)
10 5
DD DD
Pin vs. Pout,IM3
(V =2.7V,I =3.0mA,f=1900+1900.1MHz)
10 0 -10
DD DD
Pout,IM3(dBm)
0
Pout
Pout(dBm)
-5 -10 -15 -20 -25 -30 -40
P-1dB=-0.5dBm
-20 -30
IM3
-40 -50 -60
IIP3=-3.2dBm
-35 -30 -25 -20 -15 -10 -5 0 -70 -40 -35 -30 -25 -20 -15 -10 -5 0
Pin(dBm)
Pin(dBm)
Gain vs. V
15
DD
1.4
NF,I
DD
vs. V
DD
3.4
( f=1.9GHz )
( f=1.9GHz )
14.5 1.3
NF
3.3
Gain(dB)
14
NF(dB)
13.5 13
1.1
3.1
12.5
1
I
2.5 3 3.5 4
DD
3
DD
12 4.5 5
V (V)
0.9 2.5
2.9 3 3.5 4
DD
4.5
5
V (V)
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I (mA)
1.2
3.2
DD
S12(dB)
1.8
Gain(dB)
10
NJG1103F1
nTYPICAL CHARACTERISTICS (1.9GHz Band)
-8-
NJG1103F1
nTYPICAL CHARACTERISTICS (1.9GHz Band)
S21 vs. frequency(~20GHz)
(V =2.7V,I =3.0mA)
25 20 15 10
DD DD
S12 vs. frequency(~20GHz)
(V =2.7V,I =3.0mA)
50 40 30 20
DD DD
S21(dB)
S12(dB)
5 0 -5 -10 -15 -20 -25 0 2 4 6 8 10 12 14 16 18 20
10 0 -10 -20 -30 -40 -50 0 2 4 6 8 10 12 14 16 18 20
frequency(GHz)
frequency(GHz)
S11 vs. frequency(~20GHz)
(V =2.7V,I =3.0mA)
25 20 15 10
DD DD
S22 vs. frequency(~20GHz)
(V =2.7V,I =3.0mA)
25 20 15 10
DD DD
S11(dB)
5 0 -5 -10 -15 -20 -25 0 2 4 6 8 10 12 14 16 18 20
S22(dB)
5 0 -5 -10 -15 -20 -25 0 2 4 6 8 10 12 14 16 18 20
frequency(GHz)
frequency(GHz)
-9-
NJG1103F1
nTYPICAL CHARACTERISTICS Scattering Parameter Table 2 VDD=2.7V, IDD=3.0mA, Zo=50 S11 S21 Freq mag ang mag ang (GHz) (units) (deg) (units) (deg) 0.1 1.000 -3.466 0.013 -99.853 0.2 1.000 -7.836 0.003 120.878 0.3 1.000 -11.376 0.011 -23.230 0.4 1.000 -15.369 0.024 -31.645 0.5 1.000 -18.524 0.045 -34.983 0.6 1.000 -22.254 0.068 -44.466 0.7 0.987 -25.261 0.096 -51.466 0.8 0.994 -28.510 0.134 -58.880 0.9 0.962 -31.527 0.173 -65.887 1.0 0.972 -33.806 0.227 -72.166 1.1 0.946 -36.765 0.287 -80.123 1.2 0.951 -38.499 0.370 -86.666 1.3 0.931 -40.743 0.466 -93.543 1.4 0.936 -42.455 0.612 -101.148 1.5 0.922 -44.128 0.816 -109.855 1.6 0.927 -46.084 1.122 -120.983 1.7 0.915 -48.182 1.603 -137.240 1.8 0.900 -50.392 2.281 -162.468 1.9 0.853 -51.550 2.711 159.780 2.0 0.829 -50.493 2.315 125.880 2.1 0.835 -49.844 1.803 104.689 2.2 0.829 -49.732 1.426 91.557 2.3 0.834 -50.427 1.192 82.277 2.4 0.821 -50.628 1.027 75.650 2.5 0.821 -51.483 0.922 69.553 2.6 0.806 -51.476 0.841 64.184 2.7 0.805 -52.354 0.782 59.683 2.8 0.798 -52.928 0.731 55.213 2.9 0.786 -53.597 0.692 51.129 3.0 0.784 -54.637 0.665 46.939 S12 mag ang (units) (deg) 0.001 -40.688 0.000 111.001 0.001 77.901 0.001 60.826 0.002 73.639 0.002 64.832 0.002 59.880 0.002 62.909 0.002 62.762 0.001 64.214 0.001 59.903 0.000 104.075 0.001 -144.742 0.002 -131.875 0.004 -140.321 0.007 -150.577 0.012 -161.035 0.018 -178.320 0.026 152.338 0.026 124.607 0.023 107.196 0.020 99.244 0.018 94.680 0.017 92.857 0.016 91.557 0.015 91.315 0.015 91.885 0.014 91.583 0.015 95.367 0.015 101.051 S22 mag ang (units) (deg) 1.000 -3.792 1.000 -7.797 1.000 -11.547 1.000 -15.222 1.000 -18.774 1.000 -22.517 0.998 -25.988 0.997 -29.586 0.994 -32.980 0.994 -36.537 0.993 -40.081 0.990 -43.600 0.987 -47.623 0.979 -52.301 0.962 -58.048 0.927 -66.488 0.830 -79.157 0.584 -100.354 0.052 -128.112 0.468 12.049 0.718 -6.837 0.827 -17.772 0.876 -24.741 0.906 -29.743 0.920 -33.371 0.934 -36.756 0.939 -39.453 0.947 -41.774 0.945 -43.991 0.955 -46.322 (1.9GHz Band)
4
3 5.6nH 1000pF VDD
5
2
S11
6 Ref.
1 Ref.
S22
Scattering Parameter Evaluation Circuit - 10 -
NJG1103F1
nRECOMMEND CIRCUIT 1 (1.5GHz Band)
4
3 8.2nH 1000pF VDD Zo=50 OUT
5 Zo=50 IN 8.2nH 10nH 6
2
1
nRECOMMEND CIRCUIT 2 (1.9GHz Band)
4
3 5.6nH 1000pF VDD Zo=50 OUT
5 Zo=50 IN 4.7nH 5.6nH 6
2
1
- 11 -
NJG1103F1
nRECOMMENDED PCB DESIGN
(Top View)
L3
L1
IN
C1
VDD OUT
L2
PCB : FR4, t=0.2mm MICROSTRIP LINE WIDTH=0.4mm(Z0=50) PCB SIZE : 14.0x14.0mm PARTS LIST PARTS ID L1 L2 L3 C1 1.5GHz 8.2nH 10nH 8.2nH 1000pF 1.9GHz 4.7nH 5.6nH 5.6nH 1000pF COMMENT TAIYO-YUDEN (HK1005) TAIYO-YUDEN (HK1005) TAIYO-YUDEN (HK1005) MURATA (GRM36)
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NJG1103F1
nPACKAGE OUTLINE (MTP6-1)
Lead material Lead surface finish Molding material UNIT Weight
: Copper : Solder plating : Epoxy resin : mm : 15mg
Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. * Do NOT eat or put into mouth. * Do NOT dispose in fire or break up this product. * Do NOT chemically make gas or powder with this product. * To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages.
[CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.
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