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Power Transistors
2SD1776, 2SD1776A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
s Features
q q
0.70.1
Unit: mm
10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2
q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1776 2SD1776A 2SD1776 Symbol VCBO VCEO VEBO ICP IC IB Ta=25C PC Tj Tstg
(TC=25C)
Ratings 80 100 60 80 6 4 2 0.5 25 2 150 -55 to +150 Unit V
16.70.3 14.00.5
emitter voltage 2SD1776A Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Junction temperature Storage temperature
V V A A A W C C
Solder Dip
4.0
7.50.2
High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw
1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a)
s Electrical Characteristics
Parameter Collector cutoff current 2SD1776 2SD1776A
(TC=25C)
Symbol ICBO ICEO IEBO Conditions VCB = 80V, IE = 0 VCB = 100V, IE = 0 VCE = 40V, IB = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 300mA IC = 1A, IB = 25mA IC = 1A, IB = 25mA VCE = 12V, IC = 200mA, f = 10MHz VCB = 10V, IE = 0, f = 1MHz IC = 1A, IB1 = 25mA, IB2 = -25mA, VCC = 50V 40 30 0.6 2.5 1 60 80 500 1500 1 1.2 V V MHz pF s s s min typ max 100 100 100 100 Unit A A A V
Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1776 2SD1776A
VCEO hFE* VCE(sat) VBE(sat) fT Cob ton tstg tf
Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time
*h FE
Rank classification
Q P hFE 500 to 1000 800 to 1500
Rank
1
Power Transistors
PC -- Ta
40 1.6 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25C 1.4 IB=3mA 1.2 2mA 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 0 2 4 6 8 10 12
2SD1776, 2SD1776A
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
10
VCE(sat) -- IC
IC/IB=40
Collector power dissipation PC (W)
35 30 25 20 15 10 5 0 (2) (3) (4) (1)
Collector current IC (A)
3
TC=100C
1
25C
1mA 0.8mA 0.6mA 0.4mA 0.2mA 0.1mA
0.3 -25C 0.1
0.03
0.01 0.01
0.03
0.1
0.3
1
3
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) -- IC
100000
hFE -- IC
1000 VCE=4V 300 100 30 10 3 1 0.3 0.1 0.01 0.03 IC/IB=40
fT -- IC
VCE=12V f=10MHz TC=25C
Base to emitter saturation voltage VBE(sat) (V)
10
Forward current transfer ratio hFE
3
10000 TC=100C 25C -25C 300 100 30 10 0.01 0.03
1
TC=-25C 100C 25C
3000 1000
0.3
0.1
0.03
0.01 0.01
0.03
0.1
0.3
1
3
0.1
0.3
1
3
10
Transition frequency fT (MHz)
30000
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
ton, tstg, tf -- IC
100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=40 (IB1=-IB2) VCC=50V TC=25C tstg 3 1 0.3 0.1 0.03 0.01 0 0.5 1.0 1.5 2.0 2.5 tf ton
Area of safe operation (ASO)
100 30 Non repetitive pulse TC=25C
Switching time ton,tstg,tf (s)
Collector current IC (A)
10
10 ICP 3 IC 1 0.3 0.1 0.03 0.01 1 3 10 30 10ms DC t=1ms
100
2SD1776A
300
2SD1776
1000
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
Power Transistors
Rth(t) -- t
102 (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink (1)
2SD1776, 2SD1776A
Thermal resistance Rth(t) (C/W)
10
(2)
1
10-1
10-2 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
3

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