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| ON Semiconductort NPN PNP High-Voltage - High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. 2N5631 2N6031 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 200 WATTS * High Collector Emitter Sustaining Voltage - * * VCEO(sus) = 140 Vdc High DC Current Gain - @ IC = 8.0 Adc hFE = 15 (Min) Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc Rating Symbol VCEO VCB VEB IC IB PD, POWER DISSIPATION (WATTS) II II II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I I II II IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIII III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS (1) Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Value 140 140 7.0 16 20 Unit Vdc Vdc Vdc Adc Adc Collector Current - Continuous Peak Base Current - Continuous 5.0 Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 200 1.14 Watts W/_C _C TJ, Tstg -65 to +200 CASE 1-07 TO-204AA (TO-3) THERMAL CHARACTERISTICS (1) Characteristic Thermal Resistance, Junction to Case Symbol JC Max Unit 0.875 _C/W (1) Indicates JEDEC Registered Data. 200 150 100 50 0 0 20 40 60 80 100 120 140 TC, TEMPERATURE (C) 160 180 200 Figure 1. Power Derating Safe Area Curves are indicated by Figure 5. All Limits are applicable and must be observed. (c) Semiconductor Components Industries, LLC, 2001 1 May, 2001 - Rev. 0 Publication Order Number: 2N5631/D 2N5631 2N6031 t, TIME ( s) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I III I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Collector-Emitter Sustaining Voltage (2) (IC = 200 mAdc, IB = 0) Collector-Emitter Cutoff Current (VCE = 70 Vdc, IB = 0) VCEO(sus) ICEO Vdc 140 - mAdc - 2.0 Collector-Emitter Cutoff Current (VCE = Rated VCB, VEB(off) = 1.5 Vdc) (VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150_C) Collector-Base Cutoff Current (VCB = Rated VCB, IE = 0) Emitter-Base Cutoff Current (VBE = 7.0 Vdc, IC = 0) ICEX mAdc - - - - 2.0 7.0 2.0 5.0 ICBO IEBO mAdc mAdc ON CHARACTERISTICS (2) DC Current Gain (IC = 8 Adc, VCE = 2.0 Vdc) (IC = 16 Adc, VCE = 2.0 Vdc) hFE - 15 4.0 - - - - 60 - Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 1.0 Adc) (IC = 16 Adc, IB = 4.0 Adc) Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 1.0 Adc) Base-Emitter On Voltage (IC = 8.0 Adc, VCE = 2.0 Vdc) VCE(sat) Vdc 1.0 2.0 1.8 1.5 VBE(sat) VBE(on) Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (3) (IC = 1.0 Adc, VCE = 20 Vdc, ftest = 0.5 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) fT 1.0 - - - MHz pF - 2N5631 2N6031 Cob hfe 500 1000 - Small-Signal Current Gain (IC = 4.0 Adc, VCE = 10 Vdc, f = 1.0 kHz) 15 *Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width v300 s, Duty Cycle w 2.0%. (2) fT = |hfe| * ftest VCC +30 V 25 s +11 V 0 -9.0 V tr, tf 10 ns DUTY CYCLE = 1.0% 51 RB D1 RC SCOPE 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.2 0.3 2N5631 2N6031 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMP) 10 20 td @ VBE(off) = 5.0 V TJ = 25C IC/IB = 10 VCE = 30 V tr -4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA For PNP test circuit, reverse all polarities and D1. Figure 2. Switching Times Test Circuit Figure 3. Turn-On Time http://onsemi.com 2 2N5631 2N6031 1.0 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.5 0.2 0.1 0.05 0.02 SINGLE PULSE 0.01 D = 0.5 0.2 0.1 P(pk) JC(t) = r(t) JC JC = 0.875C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) JC(t) DUTY CYCLE, D = t1/t2 0.5 1.0 2.0 5.0 10 t, TIME (ms) 20 50 100 200 500 1000 2000 0.05 0.02 0.01 0.02 0.05 0.1 0.2 Figure 4. Thermal Response 20 IC, COLLECTOR CURRENT (AMP) 10 dc 5.0 ms 1.0 ms 7.0 5.0 2.0 1.0 0.5 ms 3.0 50 ms TJ = 200C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C CURVES APPLY BELOW RATED VCEO 2N5631, 2N6031 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 0.7 0.5 0.3 0.2 2.0 3.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 200_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 5. Active-Region Safe Operating Area NPN 2N5631 5.0 3.0 2.0 ts TJ = 25C IC/IB = 10 IB1 = IB2 VCE = 30 V t, TIME ( s) 4.0 3.0 2.0 PNP 2N6031 TJ = 25C IB1 = IB2 IC/IB = 10 VCE = 30 V ts 1.0 0.6 0.4 0.3 tf 0.3 0.5 0.7 1.0 5.0 7.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 10 20 1.0 0.7 0.5 0.2 0.3 tf 2.0 3.0 0.5 0.7 1.0 5.0 7.0 IC, COLLECTOR CURRENT (AMP) 10 20 0.2 0.2 Figure 6. Turn-Off Time http://onsemi.com 3 2N5631 2N6031 NPN 2N5631 1000 700 C, CAPACITANCE (pF) 500 Cib 300 200 Cob 100 0.2 0.5 1.0 2.0 5.0 10 20 50 VR, REVERSE VOLTAGE (VOLTS) 100 200 TJ = 25C C, CAPACITANCE (pF) 1000 700 500 Cib 2000 PNP 2N6031 TJ = 25C 300 200 Cob 0.2 0.5 1.0 2.0 5.0 10 20 50 VR, REVERSE VOLTAGE (VOLTS) 100 200 Figure 7. Capacitance 500 300 200 hFE, DC CURRENT GAIN 100 70 50 30 20 10 7.0 5.0 0.2 0.3 TJ = 150C 25C -55C VCE = 2.0 V VCE = 10 V 500 300 200 hFE, DC CURRENT GAIN 100 70 50 30 20 TJ = +150C +25C -55C VCE = 2.0 V VCE = 10 V 0.5 0.7 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 20 10 7.0 5.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 20 Figure 8. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 25C 1.6 1.2 0.8 0.4 0 0.05 0.07 0.1 IC = 4.0 A 8.0 A 16 A VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 2.0 TJ = 25C 1.6 1.2 0.8 0.4 0 0.05 0.07 0.1 IC = 4.0 A 8.0 A 16 A 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (AMP) 2.0 3.0 5.0 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (AMP) 2.0 3.0 5.0 Figure 9. Collector Saturation Region http://onsemi.com 4 2N5631 2N6031 PACKAGE DIMENSIONS CASE 1-07 TO-204AA (TO-3) ISSUE Z A N C -T- E D U V 2 2 PL SEATING PLANE K M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 0.13 (0.005) L G 1 TQ M Y M -Y- H B -Q- 0.13 (0.005) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR http://onsemi.com 5 2N5631 2N6031 Notes http://onsemi.com 6 2N5631 2N6031 Notes http://onsemi.com 7 2N5631 2N6031 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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