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| tm * * * * * TE CH T431616A SDRAM FEATURES 3.3V power supply Clock cycle time : 6 / 7 / 8 / 10 ns Dual banks operation LVTTL compatible with multiplexed address All inputs are sampled at the positive going edge of system clock * Burst Read Single-bit Write operation * DQM for masking * Auto refresh and self refresh * 32ms refresh period (2K cycle) * MRS cycle with address key programs - CAS Latency ( 2 & 3 ) - Burst Length ( 1 , 2 , 4 , 8 & full page) - Burst Type (Sequential & Interleave) * Available package type in 50 pin TSOP(II) and 60-pin CSP. * Operating temperature : - -5 ~ +70 C - -40 ~ +85 C 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM GRNERAL DESCRIPTION The T431616A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits , fabricated with high performance CMOS technology . Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle . Range of operating frequencies , programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth , high performance memory system applications. PART NUMBER EXAMPLES PART NO. CLOCK CYCLE TIME 7ns 7ns 7ns 7ns MAX FREQUENCY PACKAGE TSOP-II CSP TSOP-II CSP OPERATING TEMPERATURE T431616A-7S T431616A-7C T431616A-7SI T431616A-7CI 143 MHz 143 MHz 143 MHz 143 MHz -5 ~ +70 C -5 ~ +70 C -40 ~ +85 C -40 ~ +85 C Taiwan Memory Technology, Inc. reserves the right P. 1 to change products or specifications without notice. Publication Date: DEC. 2000 Revision: C tm V DD DQ0 DQ1 V SSQ DQ2 DQ3 V DDQ DQ4 DQ5 V SSQ DQ6 DQ7 V DDQ LDQM WE CAS RAS CS BA A10/AP A0 A1 A2 A3 V DD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 TE CH T431616A PIN ARRANGEMENT (TSOP-II Top View) 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 Vss DQ15 DQ14 V SSQ DQ13 DQ12 V DDQ DQ11 DQ10 V SSQ DQ9 DQ8 V DDQ N.C/RFU UDQM CLK CKE N.C A9 A8 A7 A6 A5 A4 Vss 50PINTSOP(II) (400mil x 825mil) (0.8 mm PIN PITCH) (CSP Bottom View) VDD A1 A10/AP N.C CS CAS WE N.C DQ7 DQ6 DQ5 DQ3 DQ2 DQ1 VDD 7 6 A3 A2 A0 N.C N.C RAS LDQM N.C N.C VSSQ VDDQ DQ4 VSSQ VDDQ DQ0 5 4 3 A4 A5 A7 A9 N.C CLK UDQM N.C N.C VDDQ VSSQ DQ11 VDDQ VSSQ DQ15 2 1 VSS A6 A8 BA CKE N.C N.C N.C DQ8 DQ9 DQ10 DQ12 DQ13 DQ14 VSS R P NM LK J HG FE DC BA Taiwan Memory Technology, Inc. reserves the right P. 2 to change products or specifications without notice. Publication Date: DEC. 2000 Revision: C tm TE CH T431616A BLOCK DIAGRAM I/O Control LW E Bank Select Data Input Register LDQM Row Decoder Row Buffeer Refresh Counter Sense AMP 512K x 16 Output Buffer DQ i Address Register CLK 512K x 16 AD D LCBR LRAS Colum n Decoder Col. Buffer Latency & Burst Length LCKE LRAS LCBR LW E LCAS Tim ing Register Program m ing Register LW CBR LDQM CLK CKE CS RAS CAS WE L(U)DQM Taiwan Memory Technology, Inc. reserves the right P. 3 to change products or specifications without notice. Publication Date: DEC. 2000 Revision: C tm PIN CLK TE CH T431616A PIN DESCRIPTION NAME System Clock Chip Select INPUT FUNCTION Active on the positive going edge to sample all input. Disables or enables device operation by masking or enabling all input except CLK,CKE and L(U)DQM Masks system clock to freeze operation from the next clock cycle. CS CKE Clock Enable CKE should be enabled at least one cycle prior to new command. Disable input buffers for power down in standby. A0 ~ A10/AP BA Address Bank Select Address Row/column addresses are multiplexed on the same pins. Row address : RA0 ~ RA10,column address : CA0 ~ CA7 Selects bank to be activated during row address latch time. Select bank for read/write during column address latch time. Latches row addresses on the positive going edge of the CLK RAS Row Address Strobe with RAS low. Enables row access & precharge. Latches column addresses on the positive going edge of the CLK CAS Column Address Strobe with CAS low. Enables column access . Enables write operation and row precharge. Latches data in starting from CAS , WE active. Makes data output Hi-Z, tSHZ after the clock and masks the output. Blocks data input when L(U)DQM active. Data inputs/outputs are multiplexed on the same pins. WE L(U)DQM DQ0 ~ DQ15 VDD/VSS VDDQ/VSSQ Write Enable Data Input/Output Mask Data Input/Output Data Output Power/Ground No Connection/Reserved for Future Use Power Supply/Ground Power and ground for the input buffers and the core logic. Isolated power supply and ground for the output buffers to provide improved noise immunity. This pin is recommended to be left No Connection on the device. N.C/RFU Taiwan Memory Technology, Inc. reserves the right P. 4 to change products or specifications without notice. Publication Date: DEC. 2000 Revision: C tm Parameter TE CH T431616A Symbol VIN,VOUT VDD,VDDQ Iout PD TOPR Tstg Value -1.0 to 4.6 -1.0 to 4.6 50 1 -5 to +70 / -40 to +85 -55 to +125 Unit V V mA W C C ABSOLUTE MAXIMUM RATINGS Voltage on Any Pin Relative To Vss Supply Voltage Relative To Vss Short circuit Output Current Power Dissipation Operating Temperature Storage Temperature Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. RECOMMENDED DC OPERATING CONDITIONS (TA = -5 to +70 C / -40 to +85 C , Voltage referenced to VSS=0V) Parameter Supply Voltage Input High Voltage Input Low Voltage Output logic high voltage Output logic low voltage Input leakage current Output leakage current Symbol VDD,VDDQ VIH VIL VOH VOL IIL IOL Min. 3.0 2.0 -0.3 2.4 -5 -5 Typ 3.3 3.0 0 Max. 3.6 VDD+0.3V 0.8 0.4 5 5 Unit V V V V V uA uA 1 2 IOH=-2mA IOL=2mA 3 4 Notes Note : 1. VIH (max) = 4.6V AC for pulse width 10ns acceptable. 2. VIL (min) = -1.0V AC for pulse width 10ns acceptable. 3. Any input 0V VIN VDD+ 0.3V , all other pin are not under test = 0V. 4. Dout = disable, 0V VOUT VDD . CAPACITANCE (TA =25 C,VDD=3.3V, f = 1MHz) Pin CLOCK ADDRESS DQ0 ~ DQ15 RAS,CAS,WE,CS,CKE,LDQM, UDQM Symbol CCLK CADD COUT CIN Min 2.5 2.5 4.0 2.5 Max 4.0 5.0 6.5 5.0 Unit pF pF pF pF Taiwan Memory Technology, Inc. reserves the right P. 5 to change products or specifications without notice. Publication Date: DEC. 2000 Revision: C tm TE CH T431616A DC CHARACTERISTICS TA = -5 to 70C / -40 to +85 C , VIH(min)/VIL(max)=2.0V/0.8V Parameter Operating Current ( One Bank Active) Symbol ICC1 Speed version -6 160 -7 150 2 2 30 mA ICC2NS Active Standby Current in powerdown mode ICC3P ICC3PS 2 10 10 40 mA 10 180 180 Refresh Current Self refresh Current ICC5 ICC6 180 170 170 170 1 160 160 160 140 140 140 -8 140 -10 120 Unit mA Test Condition Burst Length = 1 Note tRCtRC(min) ,tCCtCC(min),IOL= 0 mA CKE VIL(max),tCC=15ns 1,3 Precharge Standby ICC2P Current in powerICC2PS down mode Precharge Standby Current in non power-down mode ICC2N mA CKE VIL(max),CLK VIL(max), tCC =* 3 CKE VIH(min), CS VIH(min),tCC=15ns Input signals are changed one time during 30ns CKEVIH(min),CLK VIL(min),tCC=* Input signals are stable CKE VIL(max),tCC=15ns 3 mA CKE VIL(max),CLK VIL(max),tCC=* 3 Active Standby ICC3N Current in non power-down mode (One Bank Active) ICC3NS Operating Current (Burst Mode) ICC4 CKEVIH(min), CS VIH(min),tCC=15ns Input signals are changed one time during 30ns CKEVIH(min),CLK VIL(min),tCC=* Input signals are stable CAS Latency 3 IOL=0 mA,Page Burst All Band Activated CAS Latency 2 3 mA mA tRC tRC(min) mA CKE 0.2V 1,3 tCCD= tCCD(min) 2,3 Note: 1. Measured with output open. Addresses are changed only one time during tCC(min) . 2. Refresh period is 32ms. Addresses are changed only one time during tCC(min) . 3. tCC : Clock cycle time. tRC : Row cycle time. tCCD : Column address to column address delay time. Taiwan Memory Technology, Inc. reserves the right P. 6 to change products or specifications without notice. Publication Date: DEC. 2000 Revision: C tm TE CH T431616A AC OPERATING CONDITIONS (VDD=3.3V 0.3V ,TA= -5 to 70C /-40 to +85C ) Parameter Input levels (VIH/VIL) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition Value 3.0 / 0 1.4 Unit V V ns V tr / tf = 1 / 1 1.4 See Fig.2 3.3V Output 1200 ohm Output 870 ohm 30pf VOH(DC)=2.4,IOH=-2mA VOL(DC)=0.4,IOL=2mA ZO=50 ohm Vtt=1.4v 50 ohm 30pf (Fig.1) DC Output Load Circuit (Fig.2)AC Output Load Circuit Taiwan Memory Technology, Inc. reserves the right P. 7 to change products or specifications without notice. Publication Date: DEC. 2000 Revision: C tm TE CH T431616A OPERATING AC PARAMETER (AC opterating conditions unless otherwise noted) Parameter Row active to row active delay RAS to CAS delay Row precharge time Row active time Row cycle time Last data in to new col. Address delay Last data in to row precharge Last data in to burst stop Col. Address to col. Address delay Number of valid output data Symbol -6 12 16 18 42 60 Speed Version -7 -8 -10 14 16 20 42 100K 63 1 2 1 1 1 1 68 70 16 20 20 48 20 20 20 50 Unit ns ns ns ns ns ns CLK CLK CLK CLK ea Note 1 1 1 1 1 2 2 2 3 4 tRRD(min) tRCD(min) tRP(min) tRAS(min) tRAS(max) tRC(min) tCDL(min) tRDL(min) tBDL(min) tCCD(min) CAS latency=3 CAS latency=2 Note: 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and then rounding off to the next higher integer. 2. Minimum delay is required to complete write. 3. All parts allow every cycle column address change. 4. In case of row precharge interrupt, auto precharge and read burst stop. The earliest a precharge command can be issued after a Read command without the loss of data is CL + BL-2 clocks. Taiwan Memory Technology, Inc. reserves the right P. 8 to change products or specifications without notice. Publication Date: DEC. 2000 Revision: C tm TE CH T431616A AC CHARACTERISTICS (AC opterating conditions unless otherwise noted) Parameter CLK cycle time CLK to valid Output delay CAS Latency = 3 CAS Latency = 2 CAS Latency = 3 CAS Latency = 2 Symbol -6 Min Max Min -7 Max Min -8 Max -10 Min Max Unit Note ns ns ns ns ns ns ns ns ns 2 3 3 3 3 2 1 tCC tSAC tOH tCH tCL tSS tSH tSLZ tSHZ 6 8 2 2 2 1.5 1 1 - 1K 5.5 6 7 8.6 2.5 2.5 2.5 1.75 1 1 1K 6 6 8 10 2.5 3 3 2 1 1 1K 6 7 10 10 2.5 3 3 2.5 1 1 1K 7 9 1 Output data hold time CLK high pulse width CLK low pulse width Input setup time Input hold time CLK to output in Low-Z CLK to output in CAS Latency = 3 Hi-Z CAS Latency = 2 5.5 6 - 6 6 - 6 7 - 7 9 ns ns Note: 1. Parameters depend on programmed CAS latency. 2. If clock rising time is longer than 1ns,(tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf)=1ns. If tr & tf is longer than 1ns,transient time compensation should be considered, i.e.,[(tr+tf)/2-1]ns should be added to the parameter. Taiwan Memory Technology, Inc. reserves the right P.9 to change products or specifications without notice. Publication Date: DEC. 2000 Revision: C tm TE CH T431616A (Unit : number of clock) CAS Latency 3 3 2 2 2 FREQUENCY vs. AC PARAMETER RELATIONAHIP TABLE T431616A-6S Frequency 166MHz(6.0ns) 143MHz(7.0ns) 125MHz(8.0ns) 111MHz(9.0ns) 100MHz(10.0ns) tRC 60ns 10 9 9 7 7 tRAS 42ns 7 6 6 5 5 tRP 18ns 3 3 3 2 2 tRRD 12ns 2 2 2 2 2 tRCD 16ns 3 3 2 2 2 tCCD 6ns 1 1 1 1 1 tCDL 6ns 1 1 1 1 1 tRDL 12ns 2 2 2 2 2 T431616A-7S Frequency 143MHz(7.0ns) 125MHz(8.0ns) 111MHz(9.0ns) 100MHz(10.0ns) 83MHz(12.0ns) (Unit : number of clock) CAS Latency 3 3 2 2 2 tRC 63ns 9 9 8 7 6 tRAS 42ns 6 6 5 5 4 tRP 20ns 3 3 3 2 2 tRRD 14ns 2 2 2 2 2 tRCD 16ns 3 2 2 2 2 tCCD 7ns 1 1 1 1 1 tCDL 7ns 1 1 1 1 1 tRDL 14ns 2 2 2 2 2 T431616A-8S Frequency 125MHz(8.0ns) 111MHz(9.0ns) 100MHz(10.0ns) 83MHz(12.0ns) 75MHz(13.0ns) (Unit : number of clock) CAS Latency 3 3 2 2 2 tRC 68ns 9 9 7 6 6 tRAS 48ns 6 6 5 4 4 tRP 20ns 3 3 2 2 2 tRRD 16ns 2 2 2 2 2 tRCD 20ns 3 3 2 2 2 tCCD 8ns 1 1 1 1 1 tCDL 8ns 1 1 1 1 1 tRDL 16ns 2 2 2 2 2 T431616A-10S Frequency 100MHz(10.0ns) 83MHz(12.0ns) 75MHz(13.0ns) 66MHz(15.0ns) 60MHz(16.7ns) (Unit : number of clock) CAS Latency 2 2 2 2 2 tRC 70ns 7 7 6 6 5 tRAS 50ns 5 5 4 4 3 tRP 20ns 2 2 2 2 2 tRRD 20ns 2 2 2 2 2 tRCD 20ns 2 2 2 2 2 tCCD 10ns 1 1 1 1 1 tCDL 10ns 1 1 1 1 1 tRDL 20ns 2 2 2 2 Note 1 Note : 1. tRDL 16.7ns is recommended for T431616A base value 2. Clock count formula : clock (round off whole number). clock period Taiwan Memory Technology, Inc. reserves the right P.10 to change products or specifications without notice. Publication Date: DEC. 2000 Revision: C tm 11 0 11 x 11 10 0 10 x 10 9 0 9 1 9 TE CH 8 0 8 0 8 1 8 1 8 0 7 1 7 0 7 0 7 1 7 0 6 5 4 3 2 1 0 JEDEC Standard Test Set (refresh counter test) 6 5 4 LTMODE 5 4 3 WT 3 2 1 0 BL 1 0 T431616A MODE REGISTER Burst Read and Single Write (for Write Through Cache) Use in future 6 2 11 x 11 0 10 x 10 0 9 x 9 0 6 v 6 5 v 4 v 3 v 3 WT 2 v 2 1 v 0 v Vender Specific v = Valid x = Don't care Bit2-0 000 001 010 011 100 101 110 111 0 1 Bit6-4 000 001 010 011 100 101 110 111 WT=0 1 2 4 8 R R R Full page Sequential Interleave CAS Latency R R 2 3 R R R R Remark R : Reserved WT=1 1 2 4 8 R R R R 5 4 LTMODE 1 0 BL Mode Register Set Burst length Wrap type Latency mode Mode Register Write Timing CLOCK CKE CS RAS CAS WE A0-A11 Taiwan Memory Technology, Inc. reserves the right P.11 to change products or specifications without notice. Publication Date: DEC. 2000 Revision: C tm TE CH T431616A Burst Length and Sequence (Burst of Two) Starting Address (column address A0 binary) Sequential Addressing Sequence (decimal) Interleave Addressing Sequence (Decimal) 0 1 (Burst of Four) Starting Address (column address A1-A0 binary) 0,1 1,0 0,1 1,0 Sequential Addressing Sequence (decimal) Interleave Addressing Sequence (Decimal) 00 01 10 11 (Burst of Eight) Starting Address (column address A2-A0 binary) 0,1,2,3 1,2,3,0 2,3,0,1 3,0,1,2 0,1,2,3 1,0,3,2 2,3,0,1 3,2,1,0 Sequential Addressing Sequence (decimal) Interleave Addressing Sequence (Decimal) 000 001 010 011 100 101 110 111 1Mx16 divice. 0,1,2,3,4,5,6,7 1,2,3,4,5,6,7,0 2,3,4,5,6,7,0,1 3,4,5,6,7,0,1,2 4,5,6,7,0,1,2,3 5,6,7,0,1,2,3,4 6,7,0,1,2,3,4,5 7,0,1,2,3,4,5,6 0,1,2,3,4,5,6,7 1,0,3,2,5,4,7,6 2,3,0,1,6,7,4,5 3,2,1,0,7,6,5,4 4,5,6,7,0,1,2,3 5,4,7,6,1,0,3,2 6,7,4,5,2,3,0,1 7,6,5,4,3,2,1,0 Full page burst is an extension of the above tables of Sequential Addressing, with the length being 256 for POWER UP SEQUENCE 1. Apply power and start clock, attempt to maintain CKE = `H' , L(U)DQM = `H' and the other pin are NOP condition at the inputs. 2. Maintain stable power, stable clock and NOP input condition for a minimum of 200us. 3. Issue precharge commands for all banks of the devices. 4. Issue 2 or more auto-refresh commands. 5. Issue mode register set command to initalize the mode register. Cf.) Sequence of 4 & 5 is regardless of the order. Taiwan Memory Technology, Inc. reserves the right P.12 to change products or specifications without notice. Publication Date: DEC. 2000 Revision: C tm Register Refresh TE CH T431616A SIMPLIFIED TRUTH TABLE COMMAND CKEn-1 CKEn CS Mode Register Set H X L Entry Exit H L H H H H H H L H L H H H X H L H X X X X X L H L H L L H L L L L L H L X H L H L RAS CAS WE DQM BA A10/AP A9~A0 Note L L L X X 1,2 L H X L H H H L X V X X H X V X L H X H L L H H X V X X H X V H H X H H L L L X V X X H X V X X X X X X X X X X X X V X 7 V X L H X V V V X X Row Address L H L H X Column Address (A0~A7) Column Address (A0~A7) Auto Refresh Self Refresh 3 3 Bank Active & Row Address Auto Precharge Disable Read Column Auto Precharge Enable Address Write & Column Auto Precharge Disable Auto Precharge Enable Address Burst Stop 4,5 4,5 6 4 Precharge Bank Selection Both Banks Entry Exit Entry Clock Suspend or Active Power Down Precharge Power Down Mode DQM No Operation Command Exit H X X X X X L H H H (V=Valid , X=Don't Care , H=Logic High , L=logic Low) Notes : 1. OP Code : Operation Code. A0~A10/AP , BA : Program keys.(@MRS) 2. MRS can be issued only at both banks precharge state. A new command can be issued after 2 clock cycle of MRS. 3. Auto refresh functions are as same as CBR refresh of DRAM. The automatical precharge without row precharge command is meant by `Auto'. Auto / self refresh can be issued only at both banks precharge state. 4. BA : Bank select address. If 'Low' : at read , wriye , row active and precharge , bank A is selected. If `High' : at read , wriye , row active and precharge , bank B is selected. If A10/AP is `High' : at row precharge , BA ignored and both banks are selected. 5. During burst read or write with auto precharge , new read/write command cannotbeissued. Another bank read/write command can be issued after the end of burst. New row active of the associated bank can be issued at tRP after the end of burst. 6. Burst stop command is valid at every burst length. 7. DQM sampled at positive going edge of a CLK masks the data-in at the very CLK (Write DQM latency is 0), but makes Hi-Z state the data-out of 2 CLK cycles after. (Read DQM latency is 2) Taiwan Memory Technology, Inc. reserves the right P.13 to change products or specifications without notice. Publication Date: DEC. 2000 Revision: C tm TE CH tCH T431616A 1 2 3 4 tCL Single Bit READ-Write Cycle (Same Page) @CAS Latency=3,Burst Length=1 0 CLOCK tCC 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 CKE HIGH tRAS tRC *Note1 tSH CS tRCD tSH tSS tRP RAS tSS tSH tCCD CAS tSS tSH tSS ADDR Ra tSS *Note2 Ca Cb tSH Cc Rb BA Bs *Note2. 3 Bs *Note2. 3 Bs *Note2. 3 *Note4 *Note2 Bs Bs Bs A10/AP Ra *Note3 *Note3 *Note3 *Note4 Rb tRAC tSRC tSH DQ Qa tSLZ tOH Db tSS tSH Qc WE tSS tSH DQM tSS Row Active Read Write Read Precharge Row Active :Don't care Taiwan Memory Technology, Inc. reserves the right P.14 to change products or specifications without notice. Publication Date: DEC. 2000 Revision: C tm TE CH T431616A *note : 1. All input expect CKE & DQM can be don't care when CS is high at the CLK high going edge. 2. Bank active & read/write are controlled by BA. BA 0 1 Active & Read/Write Bank A Bnak B 3. Enable and disable auto precharge function are controlled by A10/AP in read/wirte command. A10/AP 0 1 BA 0 1 0 1 Operation Disable auto precharge,leave bank A active at end of burst. Disable auto precharge,leave bank B active at end of burst. Enable auto precharge, precharge bank A at end of burst. Enable auto precharge, precharge bank B at end of burst. 4. A10/AP and BA control bank precharge when precharge command is asserted. A10/AP BA 0 0 1 0 1 X precharge Bank A Bank B Both Banks Taiwan Memory Technology, Inc. reserves the right P.15 to change products or specifications without notice. Publication Date: DEC. 2000 Revision: C tm CLOCK CKE TE CH 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 T431616A 17 18 19 Power Up Sequence H ig h le v e l is n e c e s s a ry CS tR P RAS SS tR C SS SS tC C D SS SS tR C SS SS CAS SS SS ADDR SS SS SS SS K ey RAa BA SS SS SS SS K ey A 1 0 /A P SS SS SS SS K ey RAa DQ H ig h -Z WE SS SS SS SS DQM H ig h le v e l is n e c e s s a ry P re c h a rg e A ll B a n k s A u to R e fre s h A u to R e fre s h M o d e R e g is te r S e t (A -B a n k ) Row A c tiv e :D o n 't c a re Taiwan Memory Technology, Inc. reserves the right P.16 to change products or specifications without notice. Publication Date: DEC. 2000 Revision: C tm 0 CLOCK CKE CS TE CH 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 T431616A 18 19 Read & Write Cycle at Same Bank @Burst Length = 4 H IG H tR C * N o te 1 tR C D RAS * N o te 2 CAS ADDR Ra C a0 Rb C b0 BA A 1 0 /A P Ra tO H Rb CL=2 DQ CL=3 * N o te 3 RAC * N o te 3 Q a0 t tSA C Q a1 tO H Q a2 Q a3 tSH Z * N o te 4 D b0 D b1 D b2 D b3 tR D L Q a0 tSA C Q a1 Q a2 Q a3 * N o te 4 D b0 D b1 D b2 D b3 tR D L tSH Z WE DQM Row A c tiv e (A B ank) R e a d (A B ank) P re c h a rg e (A B ank) R o w A c tiv e (A -B n a k ) W rite ( A B nak) P re c h a rg e (a -B n a k ) : D o n 't c a r e *Note : 1. Minimum row cycle times is requiqed to complete internal DRAM operation. 2. Row precharge can interrupt burst on any cycle. [CAS Latency-1] number of valid output data is available after Row precharge. Last valid output will be Hi-Z(tSHZ) after the clock. 3. Access time from Row active command. Burst can't end in Full Page Mode. Taiwan Memory Technology, Inc. reserves the right P.17 to change products or specifications without notice. Publication Date: DEC. 2000 Revision: C tCC*(tRCD+CAS latency-1)+tSAC 4. Output will be Hi-Z after the end of burst.(1,2,4,8 bit burst) tm 0 CLOCK CKE CS TE CH 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 T431616A 18 19 Page Read & Write Cycle at Same Bank @ Burst Length = 4 H IG H tR C D RAS * N o te 2 tC C D CAS ADDR Ra C a0 C b0 C c0 C d0 BA A 1 0 /A P tR D L CL=2 DQ CL=3 Q a0 Q a1 Q b0 Q b1 Q b2 D c0 D c1 D d0 D d1 tC D L Q a0 Q a1 Q b0 Q b1 D c0 D c1 D d0 D d2 WE * N o te 3 * N o te 1 DQM R o w A c tiv e (A -B n a k ) R e a d (A B nak) R e a d (A B nak) W rite ( A B nak) W rite ( A B nak) P re c h a rg e (A -B n a k ) : D o n 't c a r e *Note : 1. To write data before burst read ends, DQM should be asserted three cycle prior to write command to avoid bus contention. 2. Row precharge will interrupt writing. Last data input, tRDL before Row precharge, will be written. 3. DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst. Input data after Row precharge cycle will be masked internally. Taiwan Memory Technology, Inc. reserves the right P.18 to change products or specifications without notice. Publication Date: DEC. 2000 Revision: C tm 0 CLOCK CKE * N o te 1 TE CH 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 T431616A 18 19 Page Read Cycle at Different Bank @ Burst Length = 4 H IG H CS RAS * N o te 2 CAS ADDR RAa CAa RBb CBb CAc CBd CAe BA A 1 0 /A P RAa RBb CL=2 DQ CL=3 Q A a0 Q A a1 Q A a2 Q A a3 Q B b0 Q B b1 Q B b2 Q B b3 Q A c0 Q A c1 Q B d0 Q B d1 Q A e0 Q A e1 Q A a0 Q A a1 Q A a2 Q A a3 Q B b0 Q B b1 Q B b2 Q B b3 Q A c0 Q A c1 Q B d0 Q B d1 Q A e0 Q A e1 WE DQM R o w A c tiv e (A -B a n k ) R e a d (A B ank) R o w A c tiv e (B -B a n k ) R e a d (B B ank) R e a d (A B ank) R e a d (B B ank) R e a d (A B ank) P re c h a rg e (A -B a n k ) : D o n 't c a r e *Note : 1. CS can be don't cared when RAS , CAS and WE are high at the clock high going edge. 2. To interrupt a burst resd by row precharge, both the read and the precharge banks must be the same. Taiwan Memory Technology, Inc. reserves the right P.19 to change products or specifications without notice. Publication Date: DEC. 2000 Revision: C tm 0 CLOCK CKE TE CH 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 T431616A 18 19 Page Write cycle at Different Bank @ Burst Length = 4 H IG H CS RAS CAS * N o te 2 ADDR RAa CAa RBb CBb CAc CBd BA A 1 0 /A P RAa RBb DQ D A a0 D A a1 D A a2 D A a3 D B b0 D B b1 D B b2 D B b3 D A c0 D A c1 D B d0 D B d1 tC D L tR D L WE * N o te 1 DQM R o w A c tiv e (A -B a n k ) R o w A c tiv e (B -B a n k ) W rite ( A B ank) W rite ( B B ank) W rite ( A B ank) W rite ( B B ank) P re c h a r g e (A -B a n k ) :D o n 't c a r e *Note : 1. To interrupt burst write by row precharge, DQM should be asserted to mask invalid input data. 2. To interrupt burst write by row precharge, both the write and the precharge banks must be the same. Taiwan Memory Technology, Inc. reserves the right P.20 to change products or specifications without notice. Publication Date: DEC. 2000 Revision: C tm 0 CLOCK CKE CS TE CH 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 T431616A 18 19 Read & Write Cycle at Different Bank @ Burst Length = 4 H IG H RAS CAS ADDR RAa CAa RBb CBb RAc CAc BA A 1 0 /A P RAa RBb RAc * N o te 1 tC D L CL=2 DQ CL=3 Q A a0 Q A a1 Q A a2 Q A a3 D B b0 D B b1 D B b2 D B b3 Q A c0 Q A c1 Q A c2 Q A a0 Q A a1 Q A a2 Q A a3 D B b0 D B b1 D B b2 D B b3 Q A c0 Q A c1 WE DQM R o w A c tiv e (A -B a n k ) R e a d (A B ank) R o w A c tiv e (B -B a n k ) P re c h a rg e (A -B a n k ) W rite ( B B ank) R o w A c tiv e (A -B a n k ) R e a d (A B ank) : D o n 't c a r e *Note : 1. tCDL should be met to complete write. Taiwan Memory Technology, Inc. reserves the right P.21 to change products or specifications without notice. Publication Date: DEC. 2000 Revision: C tm 0 CLOCK CKE CS TE CH 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 T431616A 18 19 Read & Write Cycle with Auto Precharge @ Burst Length = 4 H IG H RAS CAS ADDR Ra Rb Ca Cb BA A 1 0 /A P Ra Rb CL=2 DQ CL=3 Q a0 Q a1 Q a2 Q a3 D b0 D b1 D b2 D b3 Q a0 Q a1 Q a2 Q a3 D b0 D b1 D b2 D b3 WE DQM R o w A c tiv e (A -B a n k ) R o w A c tiv e (B -B a n k ) R e a d w ith A u to p re c h a rg e (A B ank) C L = 2 A u to P re c h a rg e S ta rt P o in t (A -B a n k ) C L = 3 A u to P re c h a rg e S ta rt P o in t (A -B a n k ) W rite w ith A u to P re c h a rg e (B B ank) A u to P re c h a rg e S ta r t P o in t (A B ank) : D o n 't c a r e *Note : 1. tCDL should be controlled to meet minimum tRAS before internal precharge start. (In the case of Burst Length = 1 & 2 and BRSW mode) Taiwan Memory Technology, Inc. reserves the right P.22 to change products or specifications without notice. Publication Date: DEC. 2000 Revision: C tm 0 CLOCK CKE TE CH 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 T431616A 18 19 Clock suspension & DQM Operation Cycle @ CAS Latency = 2 ,Burst Length = 4 CS RAS CAS ADDR Ra Ca Cb Cc BA A 1 0 /A P Ra DQ Q a0 Q a1 Q a2 Q a3 tS H Z Q b0 Q b1 tS H Z D c0 D c2 WE * N o te 3 DQM R o w A c tiv e R ead C lo c k S u s p e n s io n R ead R ead Q D M W r ite W r ite Q D M C lo c k S u s p e n s io n W r ite Q D M :D o n 't c a r e *Note 1. DQM is needed to prevent bus contention. Taiwan Memory Technology, Inc. reserves the right P.23 to change products or specifications without notice. Publication Date: DEC. 2000 Revision: C tm 0 CLOCK CKE CS TE CH 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 T431616A 18 19 Read Interrupted by Precharge Command & Read Burst Stop Cycle @ Burst Length=Full Page H IG H RAS CAS ADDR RAa CAa CAb BA A 1 0 /A P RAa * N o te 2 1 1 CL=2 DQ Q A a0 Q A a1 Q A a2 Q A a3 Q A a4 Q A b0 Q A b1 Q A b2 Q A b3 Q A b4 Q A b5 2 2 CL=3 Q A a0 Q A a1 Q A a2 Q A a3 Q A a4 Q A b0 Q A b1 Q A b2 Q A b3 Q A b4 Q A b5 WE DQM R o w A c tiv e (A -B a n k ) R e a d (A B ank) B u rs t S to p R e a d (A B ank) P re c h a rg e (A -B a n k ) : D o n 't c a r e *Note : 1. Burst can't end in full page mode, so auto precharge can't issue. 2. About the valid DQs after burst stop, it is same as the case of RAS interrupt. Both cases are illustrated above timing diagram. See the lable 1,2 on them. But at burst write, burst stop and RAS interrupt should be compared carefully. Refer the timing diagram of `Full Page write burst stop cycle'. 3. Burst stop is valid at every burst length. Taiwan Memory Technology, Inc. reserves the right P.24 to change products or specifications without notice. Publication Date: DEC. 2000 Revision: C tm 0 CLOCK CKE TE CH 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 T431616A 18 19 Write Interrupted by Prechareg Command & Write Burst Stop Cycle @ Burst Length=Full Page H IG H CS RAS CAS ADDR RAa CAa CAb BA A 1 0 /A P RAa tB D L tR D L * N o te 3 DQ D A a0 D A a1 D A a2 D A a3 D A a4 D A b0 D A b1 D A b2 D A b3 D A b4 D A b5 WE DQM R o w A c tiv e (A -B a n k ) W rite ( A B ank) B u rs t S to p W rite ( A B ank) P re c h a r g e (A -B a n k ) :D o n 't c a r e *Note : 1. Burst can't end in full page mode, so auto precharge can't issue. 2. Data-in at the cycle of interrupted by precharge can not be written into the corresponding memory cell. It is defined by AC parameter of tRDL. DQM at write interrupted by precharge command is needed to prevent invalid write. Input data after Row precharge cycle will be masked internally. 3. Burst stop is valid at every burst length. Taiwan Memory Technology, Inc. reserves the right P.25 to change products or specifications without notice. Publication Date: DEC. 2000 Revision: C tm 0 CLOCK CKE CS TE CH 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 T431616A 18 19 Burst Read Single bit Write Cycle @ Burst Length = 2 H IG H RAS * N o te 2 CAS ADDR RAa CAa RBb CAb RAc CBc CAd BA A 1 0 /A P RAa RBb RAc CL=2 DQ CL=3 D A a0 D A b0 D A b1 D B c0 D A d0 D A d1 D A a0 D A b0 D A b1 D B c0 D A d0 D A d1 WE DQM R o w A c tiv e (A -B a n k ) R o w A c tiv e (A -B a n k ) W rite ( A B ank) R e a d w ith A u to P re c h a rg e (A B ank) R o w A c tiv e (A -B a n k ) W rite w ith A u to P re c h a rg e (A B ank) R e a d (A B ank) P re c h a rg e (A -B a n k ) : D o n 't c a r e *Note : 1. BRSW modes is enabled by setting A9 `High' at MRS (Mode Register Set). At the BRSW Mode, the burst length at write is fixed to `1' regardless of programmed burst length. 2. When BRSW write command with auto precharge is executed, keep it in mind that tRAS should not be violated. Auto precharge is executed at the next cycle of burst-end, so in the case of BRSW write command, the precharge command will be issued after two clock cycle. Taiwan Memory Technology, Inc. reserves the right P.26 to change products or specifications without notice. Publication Date: DEC. 2000 Revision: C tm CLOCK CKE TE CH 0 1 2 3 4 5 6 7 8 9 SS * N o te 2 T431616A SS SS ts s * N o te 1 * N o te 3 Active/ Precharge Power Down Mode @ CAS latency = 2, Butsr length = 4 10 11 12 13 14 15 16 17 18 19 ts s ts s SS CS SS SS SS SS RAS SS SS SS SS CAS SS SS SS SS ADDR SS SS Ra SS SS Ca BA SS SS SS SS A 1 0 /A P SS SS Ra SS SS tSH Z DQ SS SS Q a0 Q a1 Q a2 WE SS SS SS SS DQM SS SS SS SS P re c h a rg e P o w e rD o w n E n try R o w A c tiv e P re c h a rg e A c tiv e P o w e rP o w e rD o w n E x it D o w n E n try A c tiv e P o w e rD o w n E x it R ead P re c h a rg e :D o n 't c a re *Note : 1. Both banks should be in idle state prior to entering precharge power down mode. 2. CKE should be set high at least 1CLK+tSS prior to Row active command. 3. Can not violate minimum refresh specification.(32ms) Taiwan Memory Technology, Inc. reserves the right P.27 to change products or specifications without notice. Publication Date: DEC. 2000 Revision: C tm 0 CLOCK CKE CS TE CH 1 2 3 * N o te 2 T431616A 4 5 SS SS Self Refresh Entry & Exit Cycle 6 7 8 9 10 * N o te 4 11 12 13 SS 14 15 16 17 18 19 t R C m in * N o te 1 * N o te 3 SS * N o te 6 SS tSS SS SS * N o te 5 SS RAS SS SS SS SS * N o te 7 CAS SS SS SS SS ADDR SS SS SS SS BA SS SS SS SS A 1 0 /A P SS SS SS SS DQ H i-z SS H i-z SS WE SS SS SS SS DQM SS SS SS SS S e lf R e fre s h E n try S e lf R e fre s h E x it A u to R e fre s h : D o n 't c a r e *Note : TO ENTER SELF REFRESH MODE 1. CS , RAS & CAS with CKE should be low at the same clock cycle. 2. After 1 clock cycle, all the inputs inculding the system clock can be don't care except for CKE. 3. The device remains in self refresh mode as long as CKE stays `Low'. Cf.) Once the device enters self refresh mode, minimum tRAS is required before exit from self refresh. TO EXIT SELF REFRESH MODE 4. System clock restart and be stable before returning CKE high. 5. CS starts from high. 6. Minimum tRC is required after CKE going high to complete self refresh exit. 7. 2K cycle of burst auto refresh is required before self refresh entry and after self refresh exit if the system uses burst refresh. Taiwan Memory Technology, Inc. reserves the right P.28 to change products or specifications without notice. Publication Date: DEC. 2000 Revision: C tm 0 CLOCK CKE TE CH Auto Refresh Cycle 5 6 0 1 2 3 4 5 6 SS T431616A 2 3 4 7 8 9 10 Mode Register Set Cycle 1 H IG H H IG H SS CS * N o te 2 SS tR P C SS SS RAS * N o te 1 CAS SS SS * N o te 3 ADDR K ey K ey SS SS DQ H i-z H i-z SS WE SS SS DQM SS SS MRS N ew C om m and A u to R e fre s h N ew C om m and :D o n 't c a re *Both banks precharge should be completed before Mode Register Set cycle and auto refresh cycle. MODE REGISTER SET CYCLE *Note : 1. CS , RAS , CAS & WE activation at the same clock cycle with address key will set internal mode register. 2. Minimum 2 clock cycles should be met before new RAS activation. 3. Please refer to Mode Register Set table. Taiwan Memory Technology, Inc. reserves the right P.29 to change products or specifications without notice. Publication Date: DEC. 2000 Revision: C tm 50 TE CH T431616A PACKAGE DIMENSIONS 50 LEAD TSOPII (400 mil) D 26 -HA A2 DEFAULT A 2(4X) R1 E 1 E 0.21 REF R2 B 0.465 REF 1.5 -C1 8.78 25 -C- A1 DEFAULT A GAGE .2.5 Taiwan Memory Technology, Inc. reserves the right P.30 to change products or specifications without notice. 291 (ZD) -Ce 3 (4X) PLANE 1 L L1 B "A" b WITH PLATING 0.10 C b SETING PLANE BASE METAL C1 C SECTION B-B b1 Symbol A A1 A2 b b1 c c1 D ZD E E1 L L1 e R1 R2 1 2 3 Min 0.05 0.95 0.30 0.30 0.12 0.10 20.82 11.56 10.03 0.40 0.12 0.12 0 0 10 10 Dimension in mm Nom Max 1.20 0.10 0.15 1.00 1.05 0.45 0.35 0.40 0.21 0.127 0.16 20.95 21.08 0.875 REF 11.76 11.96 10.16 10.29 0.50 0.60 0.80 REF 0.80 BSC 0.25 8 15 20 15 20 Min 0.002 0.037 0.012 0.012 0.005 0.004 0.820 0.455 0.394 0.016 0.005 0.005 0 0 10 10 Dimension in inch Nom 0.004 0.039 0.014 0.005 0.825 0.034 REF 0.463 0.400 0.020 0.031 REF 0.031 BSC 15 15 Max 0.047 0.006 0.041 0.018 0.016 0.008 0.006 0.830 0.471 0.405 0.024 0.010 8 20 20 Publication Date: DEC. 2000 Revision: C tm TE CH T431616A PACKAGE DIMENSIONS 60-pin CSP TOP VIEW A1 CORNER R P N ML K J H GF E D C B A A1 CORNER BOTTOM VIEW A B CD E F G H J KLMN P R C 1 2 3 4 5 6 7 D1 B1 1 2 3 4 5 6 7 AB D C1 A1 E3 E2 E E1 SEATING PLANE Symbol A A1 B B1 C C1 D D1 E E1 E2 E3 Min 6.30 10.00 0.35 0.35 0.22 0.42 Dimension in mm Nom Max 6.40 6.50 10.10 10.20 3.90(typ) 9.10(typ) 0.65(typ) 0.65(typ) 0.40 0.40 0.27 0.32 1.00 0.21 0.45 0.48 Min 0.248 0.394 0.014 0.014 0.009 0.017 Dimension in inch Nom Max 2.52 2.56 0.398 0.40.2 0.154(typ) 0.358(typ) 0.026(typ) 0.026(typ) 0.016 0.016 0.11 0.13 0.039 0.008 0.018 0.019 Taiwan Memory Technology, Inc. reserves the right P.31 to change products or specifications without notice. Publication Date: DEC. 2000 Revision: C |
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