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| NEC's HIGH CTR, 4 PIN ULTRA SMALL PACKAGE FLAT LEAD OPTOCOUPLER FEATURES * SMALL AND THIN PACKAGE: 4.6 (L) x 2.5 (W) x 2.1 (H) mm * HIGH CURRENT TRANSFER RATIO: CTR = 200% TYP @ IF = 1 mA, VCE = 5 V * HIGH ISOLATION VOLTAGE BV: 2500 Vr.m.s. * TAPE AND REEL AVAILABLE PS2911-1 DESCRIPTION NEC's PS2911-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor in one package for high density mounting applications. An ultra small flat lead package has been provided which realizes a reduction in mounting area of about 30% compared with the PS28XX series. APPLICATIONS * DC/DC CONVERTER * MODEM/PC CARD ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER SYMBOLS PARAMETERS Forward Voltage, IF = 5 mA Reverse Current, VR = 5 V Terminal Capacitance, V = 0, f = 1.0 MHz Collector to Emitter Current, IF = 0 mA, VCE = 40 V Current Transfer Ratio (IC/IF)1, IF = 1 mA, VCE = 5 V Collector Saturation Voltage, IF = 1 mA, IC = 0.2 mA Isolation Resistance, VI-O = 1.0 k VDC Isolation Capacitance, V = 0 V, f = 1.0 MHz Rise Time2, VCC = 5 V, IC = 2 mA, RL = 100 Fall Time2, VCC = 5 V, IC = 2 mA, RL = 100 On Time2, VCC = 5 V, IF = 1 mA, RL = 5 k Storage Time2, VCC = 5 V, IF = 1 mA, RL = 5 k Off Time2, VCC = 5 V, IF = 1 mA, RL = 5 k 2. Test Circuit for Switching Time PULSE INPUT PW = 100 s Duty Cycle = 1/10 In monitor IF 50 VOUT RL = 100 or 5 k VCC PS2911-1 UNITS V A pF nA % V pF s s s s s PS2911-1 3 4 1011 0.4 5 10 40 10 120 100 200 0.13 15 100 400 0.3 MIN 0.9 TYP 1.1 MAX 1.3 5 Diode VF IR CT Transistor ICEO CTR VCE(sat) RI-O CI-O tR tF ton ts toff 1. CTR RANK: N: 100 to 400 (%) K: 200 to 400 (%) L: 150 to 300 (%) M: 100 to 200 (%) Coupled 1 2 California Eastern Laboratories PS2911-1 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS Diode IF IF/C IF (Peak) PD VR Transistor VCEO VECO IC PC/C PC Coupled BV PT TA TSTG PARAMETERS Forward Current (DC) Forward Current Derating Peak Forward Current2 Power Dissipation Reverse Voltage Collector to Emitter Voltage Emitter to Collector Voltage Collector Current Power Dissipation Derating Power Dissipation Isolation Voltage3 Total Power Dissipation Operating Ambient Temp. Storage Temperature UNITS mA mA/C A mW V V V mA mW/C mW Vr.m.s. mW C C RATINGS 50 0.5 0.5 60 6 40 5 40 1.2 120 2500 160 -55 to +100 -55 to +150 OPTOCOUPLER CONSTRUCTION PARAMETER Air Distance Creepage Distance Isolation Distance UNITS (MIN) 4 mm 4 mm 0.4 mm OUTLINE DIMENSIONS (Units in mm) 2.50.3 4 3 4.60.2 N 2.1 MAX CAUTIONS REGARDING NOISE: Be aware that when voltage is applied suddenly between the optocoupler's input and outout or between collector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute maximum ratings. 0.40.1 1.27 0.15 -0.05 Notes: 1. Operation in excess pf any one of these parameters may result in permanent damage. 2. PW = 100 s, Duty Cycle = 1%. 3. AC voltage for 1 minute at TA = 25 C, RH = 60 % between input and output. 1 2 5.00.2 +0.1 0.20.1 ORDERING INFORMATION PART NUMBER PS2911-1-F3 PS2911-1-F4 PACKING STYLE Embossed Tape 3500 pcs/reel TOP VIEW 1. Anode 2. Cathode 3. Emitter 4. Collector RECOMMENDED MOUNT PAD DIMENSIONS (Units in mm) 1.27 MARKING (0.35) 0.8 0.6 11 N -Last number of Type No: 11 -An initial of "NEC" 111 4.14 -Assembly lot No. 1 pin mark (nicked corner) 4.7 5.7 1 11 Week assembled Year assembled ( ): Reference value 24-R0.1 Remark: This drawing is considered to meet air and outer creepage distance 4.0 mm minimum. All dimensions in this figure must be evaluated before use. 4.1 MIN PS2911-1 TYPICAL CHARACTERISTICS (TA = 25C, unless otherwise specified) MAXIMUM FORWARD CURRENT vs. AMBIENT TEMPERATURE 80 140 TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation, PC (mW) Maximum Forward Current, IF (mA) 120 100 80 60 40 60 40 0.5 mA/C 20 20 0 25 50 75 100 0 25 50 75 100 120 Ambient Temperature, TA (C) Ambient Temperature, TA (C) FORWARD CURRENTvs. FORWARD VOLTAGE 100 20 18 COLLECTOR CURRENTvs. COLLECTOR TO EMITTER VOLTAGE CTR = 200 % IF = 5 mA Forward Current, IF (mA) 10 Collector Current, IC (V) TA = +100C +60C +25C 16 14 12 10 8 6 4 2 1 0C -25C -50C 0.1 2 mA 1 mA 0.5 mA 0.01 0.0 0.5 1.0 1.5 2.0 0 2 4 6 8 10 Forward Voltage, VF (V) Collector to Emitter Voltage, VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 10 CTR = 200% 5 mA 2 mA Collector to Emitter Dark Current, ICEO (nA) 10000 1000 VCE = 20 V 40 V 100 Collector Current, IC (mA) 1 mA 1 IF = 0.5 mA 10 1 -25 0 25 50 75 100 0.1 0.0 0.2 0.4 0.6 0.8 1.0 Ambient Temperature, TA (C) Collector Saturation Voltage, VCE(sat) (V) PS2911-1 TYPICAL CHARACTERISTICS (TA = 25C, unless otherwise specified) NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE CURRENT TRANSFER RATIO vs. FORWARD CURRENT 500 VCE = 5 V, n=3 Normalized Current Transfer Ratio, CTR 1.4 1.2 1.0 Current Transfer Ratio, CTR (%) 400 Sample A B C 0.8 300 0.6 0.4 0.2 0.0 -50 Normalized to 1.0 at TA = 25C, IF = 1 mA, VCE = 2 V 200 100 -25 0 25 50 75 100 0 0.1 1 10 100 Ambient Temperature, TA (C) Forward Current, IF (mA) SWITCHING TIME vs. LOAD RESISTANCE 10000 IF = 1 mA, VCC = 5 V, CTR = 200 % FREQUENCY RESPONSE 0 Switching Time, t (s) Normalized Gain, GV 1000 toff -5 RL = 1 k 100 100 ts ton -10 300 -15 10 -20 1 1k 10k 100k 1000k -25 0.1 1 10 100 1000 Load Resistance, RL () Frequency, f (kHz) LONG TERM CTR DEGRADATION 1.2 IF = 1 mA 1.0 TA = 25C CTR (relative Value) 0.8 60C 0.6 0.4 0.2 0.0 10 10 2 10 3 10 4 10 5 10 6 Time (Hr) PS2911-1 TAPING SPECIFICATIONS (Units in mm) Tape Outline and Dimensions 1.75 0.1 2.0 0.5 4.0 0.1 1.55 -0 +0.1 2.9 MAX 5.3 0.1 12.0 0.2 5.3 0.1 2.40.1 1.55 0.05 4.0 0.1 2.9 0.1 Tape Direction PS2911-1-F3 PS2911-1-F4 N N N N Reel Outline and Dimensions 2.00.5 2.0 0.5 13.0 0.2 3302.0 100 1.0 R1.0 21.0 0.8 Packing: 3500 pcs/reel N N N N 13.51.0 11.9 to 15.4 Outer edge of flange PS2911-1 RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering * Peak reflow temperature * Time of peak reflow temperature * Time of temperature higher than 220 C * Time to preheat temperature from 120 to 180C * Number of reflows * Flux 260 C or below (package surface temperature) 10 seconds or less 60 seconds or less 12030 s Three Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended). Recommended Temperature Profile of Infrared Reflow Package Surface Temperature T (C) (heating) to 10 s 260 C (peak temperature) 220 C to 60 s 180 C 120C 12030 s (preheating) Time (s) (2) Wave soldering * Temperature * Time * Preheating conditions * Number of times * Flux 260 C or below (molten solder temperature) 10 seconds or less 120C or below (package surface temperature) One (Allowed to be dipped in solder including plastic mold portion.) Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended). (3) Cautions * Fluxes USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature ad high humidity. Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. Avoid removing the residual flux with chlorine-based cleaning solvent after a reflow process. 10/14/2003 A Business Partner of NEC Compound Semiconductor Devices, Ltd. |
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