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| DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification N-channel junction FETs FEATURES * High-speed switching * Interchangeability of drain and source connections * Low RDSon at zero gate voltage ( < 30 for PMBFJ111). DESCRIPTION Symmetrical N-channel junction FETs in a surface mount SOT23 envelope. Intended for use in applications such as analog switches, choppers, commutators, multiplexers and thin and thick film hybrids. PINNING - SOT23 PIN 1 2 3 Note 1. Drain and source are interchangeable. DESCRIPTION drain source gate PMBFJ111; PMBFJ112; PMBFJ113 handbook, halfpage 3 d s g 1 Top view 2 MAM385 Fig.1 Simplified outline and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGSO VGDO IG Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain-drain voltage forward gate current (DC) total power dissipation storage temperature operating junction temperature Tamb = 25 C; note 1 CONDITIONS MIN. - - - - - -65 - MAX. 40 -40 -40 50 300 150 150 UNIT V V V mA mW C C April 1995 2 Philips Semiconductors Product specification N-channel junction FETs THERMAL CHARACTERISTICS Tj =P(Rth j-t + Rth t-s + Rth s-a) + Tamb SYMBOL Rth j-a Rth j-a Notes 1. Mounted on a ceramic substrate, 8 mm x 10 mm x 0.7 mm. 2. Mounted on printed circuit board. STATIC CHARACTERISTICS Tj = 25 C. SYMBOL -IGSS IDSS PARAMETER reverse gate current drain current PMBFJ111 PMBFJ112 PMBFJ113 -V(BR)GSS -VGS(off) gate-source breakdown voltage gate-source cut-off voltage PMBFJ111 PMBFJ112 PMBFJ113 RDS(on) drain-source on-resistance PMBFJ111 PMBFJ112 PMBFJ113 VGS = 0 V; VDS = 0.1 V -IG = 1 A; VDS = 0 ID = 1 A; VDS = 5 V CONDITIONS -VGS = 15 V; VDS = 0 VGS = 0; VDS = 15 V PARAMETER from junction to ambient (note 1) from junction to ambient (note 2) MAX. 430 500 UNIT K/W K/W PMBFJ111; PMBFJ112; PMBFJ113 MIN. - 20 5 2 40 3 1 0.5 - - - MAX. UNIT 1 nA - mA - - -V 10 V 5 3 30 50 100 April 1995 3 Philips Semiconductors Product specification N-channel junction FETs DYNAMIC CHARACTERISTICS Tj = 25 C. SYMBOL Ciss PARAMETER input capacitance CONDITIONS VDS = 0 -VGS = 10 V f = 1 MHz VDS = 0 -VGS = 0 f = 1 MHz Tamb = 25 C Crss feedback capacitance VDS = 0 -VGS = 10 V f = 1 MHz PMBFJ111; PMBFJ112; PMBFJ113 TYP. 6 - MAX. UNIT pF 22 28 pF 3 - pF Switching times (see Fig.2) tr ton tf toff Notes 1. Test conditions for switching times are as follows: VDD = 10 V, VGS = 0 to -VGS(off) (all types); -VGS(off) = 12 V, RL = 750 (PMBFJ111); -VGS(off) = 7 V, RL = 1550 (PMBFJ112); -VGS(off) = 5 V, RL = 3150 (PMBFJ113). rise time turn-on time fall time turn-off time note 1 note 1 note 1 note 1 6 13 15 35 - - - - ns ns ns ns VGS = 0 V ok, halfpage 10% VDD 10 nF 50 10 F RL 1 F Vi -VGS off 90% toff ts 90% Vo MBK289 DUT 50 SAMPLING SCOPE 50 ton tf td tr 10% MBK294 Fig.2 Switching circuit. Fig.3 Input and output waveforms. April 1995 4 Philips Semiconductors Product specification N-channel junction FETs PACKAGE OUTLINE Plastic surface mounted package; 3 leads PMBFJ111; PMBFJ112; PMBFJ113 SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 April 1995 5 Philips Semiconductors Product specification N-channel junction FETs DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values PMBFJ111; PMBFJ112; PMBFJ113 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1995 6 |
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