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| BAT 62-02W Silicon Schottky Diode * Low barrier diode for detectors up to GHz frequencies 2 1 VES05991 ESD: Electrostatic discharge sensitive device, observe handling precaution Type BAT 62-02W Marking Ordering Code L Q62702-A1028 Pin Configuration 1=C 2=A Package SCD-80 Maximum Ratings Parameter Diode reverse voltage Forward current Junction temperature Storage temperature Symbol Value 40 40 150 -55 ...+150 Unit V mA C VR IF Tj Tstg Thermal Resistance Junction - ambient 1) RthJA RthJS 650 810 K/W Junction - soldering point 1) Package mounted on epoxy pcb 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11 Jul-02-1998 1998-11-01 BAT 62-02W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. 0.58 max. 10 1 Unit IR VF - A V VR = 40 V Forward voltage I F = 2 mA AC characteristics Diode capacitance CT CC R0 Ls - 0.35 0.09 225 0.6 0.6 - pF VR = 1 V, f = 1 MHz Case capacitance f = 1 MHz Differential resistance k nH VR = 0 , f = 10 kHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Jul-02-1998 1998-11-01 BAT 62-02W Forward current IF = f (TA*;TS) * Package mounted on epoxy 50 mA IF TA 30 TS 20 10 0 0 20 40 60 80 100 120 C 150 TA,TS Permissible Pulse Load R thJS = f(t p) Permissible Pulse Load IFmax / IFDC = f(tp) 10 3 10 1 K/W RthJS IFmax / IFDC 10 2 - 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 -7 10 10 -6 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group 33 Jul-02-1998 1998-11-01 BAT 62-02W Forward current IF = f (V F) T A = parameter 10 4 Leakage current I R = f (VR) TA = Parameter 10 3 uA uA T A = 125C IF 10 3 TA = 25C TA = 85C TA = 125C TA = -40C 10 2 IR T A = 85C 10 1 10 2 10 0 T A = 25C 10 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V 2.0 10 -1 0 5 10 15 20 25 30 V 40 VF VR Diode capacitance CT = f (V R) f = 1MHz Rectifier voltage Vout = f (Vin) f = 900 MHz RL = parameter in k 10 4 mV 10 3 0.5 pF CT 0.3 10 2 VO 10 1 10 0 0.2 10 -1 0.1 10 -2 1000 500 200 100 50 20 RL=10 0.0 0 5 10 15 20 V 30 10 -3 0 10 10 1 10 2 10 3 mV 10 4 VR VI Semiconductor Group Semiconductor Group 44 Jul-02-1998 1998-11-01 |
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