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| 2SK3390 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-846 (Z) 1st. Edition Aug.2001 Features * High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, add= 60 % min. (f = 836 MHz) * Compact package capable of surface mounting Outline RP8P D 3 1 G 2 S 2 1 3 1. Gate 2. Source 3. Drain Note: Marking is "IX". This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. 2SK3390 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW < 1sec, Tch < 150 C 2. Value at Tc = 25C Symbol VDSS VGSS ID ID(pulse) Pch Tch Tstg Note1 Note2 Ratings 17 10 1 2.5 20 150 -45 to +150 Unit V V A A W C C Electrical Characteristics (Tc = 25C) Item Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Input capacitance Output capacitance Output Power Added Efficiency Symbol Min IDSS IGSS VGS(off) Ciss Coss Pout add -- -- 2.2 -- -- 6.31 60 Typ -- -- -- 27.5 10.5 -- -- Max 10 5 3.0 -- -- -- -- Unit A A V pF pF W % Test Conditions VDS = 13.7 V, VGS = 0 VGS = 10V, VDS = 0 ID = 1mA, VDS = 13.7V VGS = 5V, VDS = 0, f = 1MHz VDS = 13.7V, VGS = 0, f = 1MHz VDS = 13.7V, IDO = 0.25A f = 836 MHz, Pin = 126 mW VDS = 13.7V, IDO = 0.25A f = 836 MHz, Pin = 126 mW Rev.0, Aug. 2001, page 2 of 7 2SK3390 Main Characteristics Maximum Channel Power Dissipation Curve Typical Output Characteristics 5 10 V 9V 7V 8V Pch (W) 40 30 Channel Power Dissipation I D (A) 4 3 6V 20 Drain Current 2 5V VGS = 4 V Pulse Test 10 1 0 50 100 150 Tc (C) 200 0 Case Temperature 2 4 6 Drain to Source Voltage 8 10 V DS (V) Typical Transfer Characteristics Tc = 75C 25C - 25C Forward Transfer Admittance |y fs | (S) Forward Transfer Admittance vs. Drain Current 10 3 1 0.3 0.1 V DS = 13.7 V Pulse Test 0.1 0.3 1 3 10 2.5 I D (A) 2 Tc = - 25C 25C 1.5 Drain Current 75C 1 0.5 V DS = 13.7 V Pulse Test 0 2 3 4 5 Gate to Source Voltage 6 7 V GS (V) 0.03 0.01 0.01 0.03 Drain Current I D (A) Rev.0, Aug. 2001, page 3 of 7 2SK3390 Drain to Source Saturatioin Voltage vs. Drain Current 3 1 0.3 0.1 0.03 0.01 VGS = 10 V Pulse Test 10 Tc = - 25C 75C Gate to Source Cutoff Voltage V GS(off) (V) Gate to Source Cutoff Voltage vs. Ambient Temperature 3.6 10 Drain to Source Saturation Voltage V DS(sat) (V) 25C 3.2 2.8 10 mA 2.4 1 mA ID = 0.1 mA 2.0 V DS = 13.7 V 1.6 - 25 0 25 50 75 100 Ta (C) 125 0.003 0.001 1 3 0.01 0.03 0.1 0.3 Drain Current I D (A) Ambient Temperature Input Capacitance vs. Gate to Source Voltage 29 Output Capacitance Coss (pF) Input Capacitance Ciss (pF) Output Capacitance vs. Drain to Source Voltage 100 28 30 27 10 26 25 24 -10 3 V GS = 0 f = 1 MHz 1 0.1 0.3 1 3 10 30 V DS = 0 f = 1 MHz -6 -2 2 6 10 Gate to Source Voltage VGS (V) Drain to Source Voltage V DS (V) Rev.0, Aug. 2001, page 4 of 7 2SK3390 Reverse Transfer Capacitance Crss (pF) Reverse Transfer Capacitance vs. Drain to Gate Votage 10 10 Output Power, Added Efficiency vs. Input Power Pout 100 Output Power Pout (W) 3 8 add 80 1 0.3 4 V DS = 13.7 V I DO = 0.25 A f = 836 MHz 50 100 150 200 40 2 V GS = 0 f = 1 MHz 0.1 0.1 0.3 1 3 10 30 0 0 20 250 0 Drain to Gate Voltege V DG (V) Input power Pin (mW) Rev.0, Aug. 2001, page 5 of 7 Added Efficiency 6 60 add (%) 2SK3390 Package Dimensions As of January, 2001 Unit: mm 5.2 0.15 2.54 0.2 1.1 3.4 0.15 1.325 0.15 0.2 1.0 0.5 +0.1 -0.05 0.6 0.16 +0.1 -0.06 4.5 Max 2.0 Max 5.6 +0.7 -0.5 Hitachi Code JEDEC EIAJ Mass (reference value) RP8P 0.08 g Rev.0, Aug. 2001, page 6 of 7 2SK3390 Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL http://www.hitachisemiconductor.com/ For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright (c) Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 5.0 Rev.0, Aug. 2001, page 7 of 7 |
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