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RF2114
2
Typical Applications * Digital Communication Systems * Portable Battery-Powered Equipment * Spread-Spectrum Communication Systems * Commercial and Consumer Systems * Driver for Higher Power Linear Applications * Base Station Equipment
MEDIUM POWER LINEAR AMPLIFIER
2
POWER AMPLIFIERS
Product Description
The RF2114 is a medium to high power linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final linear RF amplifier in UHF radio transmitters operating between 1MHz and 600MHz. It may also be used as a driver amplifier in higher power applications. The device is selfcontained with the exception of the output matching network, power supply feed line, and bypass capacitors. The device can be used in 3-cell battery applications. The maximum CW output at 3V is 125mW. The unit has a total gain of 35dB, depending upon the output matching network.
0.156 0.148
.018 .014
0.010 0.004
0.347 0.339 0.050
0.252 0.236
8 MAX 0 MIN
0.059 0.057
0.0500 0.0164
0.010 0.007
Optimum Technology Matching(R) Applied
Si BJT Si Bi-CMOS
!
Package Style: SOIC-14
GaAs HBT SiGe HBT
GaAs MESFET Si CMOS
Features * 1MHz to 600MHz Operation * Over 800mW CW Output Power * 35dB Small Signal Gain * Single 2.7V to 6.5V Supply
RF1 IN GND GND PD RF2 IN RF1 OUT VCC1
1 2 3 4 5 PA 6 7 BIAS CIRCUIT
14 13 12 11 10 9 8
RF2 OUT RF2 OUT GND GND GND RF2 OUT RF2 OUT
PRE AMP
* 45% Efficiency * Digitally Controlled Power Down Mode
Ordering Information
RF2114 RF2114 PCBA Medium Power Linear Amplifier Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Rev A5 001222
2-33
RF2114
Absolute Maximum Ratings Parameter
Supply Voltage Power Down Voltage (VPD) DC Supply Current Input RF Power Output Load VSWR Operating Ambient Temperature Storage Temperature
Rating
-0.5 to +8.5 -0.5 to +5.0 500 +12 20:1 -40 to +85 -40 to +150
Unit
VDC V mA dBm C C Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
2
POWER AMPLIFIERS
Parameter
Overall
Frequency Range Saturated Output Power Output Power Power Gain CW Total Efficiency Two Tone Total Efficiency IM3 IM5 Second Harmonic Third Harmonic Output Noise Power Input VSWR Input Impedance Load Impedance
Specification Min. Typ. Max.
Unit
Condition
T=25C, VCC =5.8V, VPD =4.0 V, ZLOAD =18, PIN =6dBm, Freq=150MHz
+28 30
-50 -70
1 to 600 +29 >+27 36 45 26 -40 -43 -24 -30 <-125 <3:1 50 18+j0 VCC
+31 40
-25 -30
MHz dBm dBm dB % % dBc dBc dBc dBc dBm/Hz
Frequency>450MHz
POUT = +19dBm/tone POUT = +19dBm/tone POUT = +19dBm/tone Without external second harmonic trap
V V V mA mA mA A ns
With external matching network; see application schematic With external matching network; see application schematic Load impedance for optimal match Voltage supplied to the input; Part is "ON" Voltage supplied to the input; Part is "OFF"
Power Down Control
Power Down "ON" Power Down "OFF" 0 2.7 to 6.5 45 300 <3.5 <100 0.2
Power Supply
Power Supply Voltage Power Supply Idle Current Supply Current VPD Current Total "OFF" Current Drain Turn-on Time 90 500 10
150
Total of pins 5 and 6 Into pin 4 VPD < 0.1VDC VPD =0 to VPD =+4VDC
2-34
Rev A5 001222
RF2114
Pin 1 2 3 4 Function RF1 IN GND GND PD Description
RF input pin. This pin is internally connected to the bias circuits. An external DC blocking capacitor is required. The value of this capacitor depends on the actual operating frequency. Ground connection. Keep the connection to the backside ground plane as short as possible, by placing the vias close to the pin. Same as pin 2. Power down control voltage. When this pin is at 0V, the device will be in power down mode, dissipating minimum DC power. When this pin is at VCC (but not higher than 5.0V max), the device will be in full power mode delivering maximum gain and output power capability. This pin may also be used to perform some degree of gain control or power control when set to voltages between 0V and VCC or 5.0V, whichever is the lowest. It is not optimized for this function so the transfer function is not linear over a wide range as with other devices specifically designed for analog gain control. However, it may be usable for coarse adjustment or in some closed loop AGC systems. This pin should not, in any circumstance, be higher in voltage than VCC. This pin should also have an external bypassing capacitor. RF input of the power stage. This pin is internally connected to the bias circuits. An external DC blocking capacitor is required. This same capacitor can also be used for interstage matching. Typically this capacitor is between RF2 IN (pin 5) and RF1 OUT (pin 6); see the application schematics for details. RF output of the pre-amplifier. Power supply needs to be supplied to this pin through an inductor to VCC. Together with the series capacitor between pin 5 and 6 the interstage matching circuit is formed. See the application schematics for values for different frequencies. Positive supply for the active bias circuits. This needs to be bypassed with a single capacitor, placed as close as possible to the package. Additional bypassing of 1F is also recommended, but proximity to the package is not as critical. Amplifier RF output. This is an unmatched collector output of the final amplifier transistor. Pins 8, 9, 13, and 14 are connected internally. Bias for the final power amplifier output transistor must also be provided through one of these two pins. Typically, pins 8 and 9 are connected to a network that provides the DC bias and also creates a second harmonic trap. A capacitor series resonates with internal bond wires and some additional series inductance, and acts as a trap at two times the operating frequency, effectively shorting out the second harmonic. Shorting out this harmonic serves to increase the amplifier's maximum output power and efficiency, as well as to lower the level of the second harmonic output. Typically, pins 13 and 14 are externally connected very close to the package and used as the RF output with a matching network that presents the optimum load impedance to the PA for maximum power and efficiency, as well as providing DC blocking at the output. Same as pin 8. Same as pin 2. Same as pin 2. Same as pin 2. Same as pin 8. Same as pin 8.
Interface Schematic
2
POWER AMPLIFIERS
5
RF2 IN
6
RF1 OUT
7
VCC1
8
RF2 OUT
9 10 11 12 13 14
RF2 OUT GND GND GND RF2 OUT RF2 OUT
Rev A5 001222
2-35
RF2114
Application Schematic for 150MHz Operation
50 strip RF INPUT 6.8 pF 330 pF 100 nH 1 2 3 14 13 12 11 10 PA 6 1200 nH 330 pF 150 nH P1-1 10 F 10 nF 330 pF 330 pF 33 pF 22 nH 7 BIAS CIRCUIT 9 8 22 nH 330 pF 50 strip RF OUTPUT PRE AMP 24 pF
2
POWER AMPLIFIERS
P1-3 1 nF 120 pF
4 5
5.6 nH
Application Schematic for 450MHz Operation
50 strip RF INPUT 20 pF 33 nH 22 1 2 3 P1-3 100 pF 4.3 pF 5 PA 6 200 12 nH 100 pF 4.3 pF P1-1 10 F 10 nF 330 pF 100 pF 10 nH 7 BIAS CIRCUIT 9 8 10 Designed for V CC = 5 V VPC = 5 V POUT = 500 mW 4 PRE AMP 14 13 12 11 6.8 nH 150 pF 50 strip RF OUTPUT 9.1 pF
1.8 nH
2-36
Rev A5 001222
RF2114
Evaluation Board Schematic (150MHz)
(Download Bill of Materials from www.rfmd.com.)
2114400 Rev A 136 MHz to 178 MHz J1 RF IN 50 strip C1 330 pF L1 100 nH 1 C2 6.8 pF 2 3 P1-3 C6 1 nF 4 5 PA 6 L3 1200 nH L4 150 nH P1-1 C12 10 nF C11 10 F C7 330 pF C10 1 nF C8 330 pF 7 BIAS CIRCUIT 9 8 L6 5.6 nH L5 22 nH C9 33 pF PRE AMP 14 13 12 11 10 P1-1 P1 1 2 P1-3 3 VCC GND PC C4 24 pF L2 22 nH C5 330 pF 50 strip J2 RF OUT
2
POWER AMPLIFIERS
C3 120 pF
Rev A5 001222
2-37
RF2114
Evaluation Board Layout 2" x 3"
2
POWER AMPLIFIERS
2-38
Rev A5 001222

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