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Infrared Light Emitting Diodes LNA2904L GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : Ie = 10 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current High center radiant intensity Transparent epoxy resin package 13.51.0 11.51.0 3.90.3 1.0 7.650.2 o5.00.2 Not soldered 2-1.00.15 2-0.60.15 2.54 0.60.15 2 1 1: Cathode 2: Anode o6.00.2 Absolute Maximum Ratings (Ta = 25C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 160 100 1.5 3 -25 to +85 - 40 to +100 Unit mW mA A V C C f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25C) Parameter Center radiant intensity Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Symbol Ie P VF IR Ct Conditions IF = 50mA IF = 50mA IF = 50mA IF = 100mA VR = 3V VR = 0V, f = 1MHz The angle in which radiant intencity is 50% min 10 1.0 typ 950 50 1.35 50 20 max Unit mW/sr nm nm 1.6 10 V A pF deg. 1 LN2904L Infrared Light Emitting Diodes IF -- Ta 120 10 2 IFP -- Duty cycle tw = 10s Ta = 25C 10 IFP -- VF tw = 10s f = 100Hz Ta = 25C IF (mA) IFP (A) 10 Allowable forward current 80 IFP (A) Pulse forward current 10 -1 1 10 10 2 100 1 Pulse forward current 1 60 10 -1 40 10 -1 20 10 -2 0 - 25 0 20 40 60 80 100 10 -3 10 -2 10 -2 0 1 2 3 4 5 Ambient temperature Ta (C ) Duty cycle (%) Forward voltage VF (V) Ie -- IFP 10 3 (1) tw = 10s f = 100Hz (2) DC Ta = 25C 1.6 VF -- Ta 10 IF = 100mA Ie -- Ta IF = 50mA Relative radiant intensity Ie VF (V) 10 2 (1) 10 1.2 50mA 10mA 0.8 Relative radiant intensity Ie Forward voltage 1 1 (2) 0.4 10 -1 10 -2 1 10 10 2 10 3 10 4 0 - 40 0 40 80 120 10 -1 - 40 0 40 80 120 Pulse forward current IFP (mA) Ambient temperature Ta (C ) Ambient temperature Ta (C ) P -- Ta 1000 IF = 50mA 100 Spectral characteristics IF = 50mA Ta = 25C Directivity characteristics 0 100 90 10 20 Peak emission wavelength P (nm) Relative radiant intensity (%) 980 80 80 70 Relative radiant intensity (%) 30 960 60 60 50 40 40 50 60 70 80 90 940 40 30 20 920 20 900 - 40 0 40 80 120 0 860 900 940 980 1020 1060 1100 Ambient temperature Ta (C ) Wavelength (nm) 2 |
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