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BDW93CFP BDW94CFP
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
s s
s s
s s
SGS-THOMSON PREFERRED SALESTYPES MONOLITHIC DARLINGTON CONFIGURATION COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT)
3 1 2
APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BDW93CFP, is a silicon epitaxial-base NPN transistor in monolithic Darlington configuration and is mounted in TO-220FP fully molded isolated package. It is intented for use in power linear and switching applications. The complementary PNP type is the BDW94CFP.
T0-220FP
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 10 K
R 2 Typ. = 150
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter NPN PNP V CBO V CEO IC I CM IB P t ot T stg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c 25 C
o
Value BDW 93CFP BDW 94CFP 100 100 12 15 0.2 33 -65 to 150 150
Uni t
V V A A A W
o o
Storage Temperature Max. O perating Junction Temperature
C C
For PNP types voltage and current values are negative.
April 1998
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BDW93CFP / BDW94CFP
THERMAL DATA
R t hj-ca se Thermal Resistance Junction-case 3.8
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CBO I CEO I EBO Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CB = 100 V V CB = 100 V V CE = 80 V V EB = 5 V I C = 100 mA 100 Tcase = 150 C
o
Min.
Typ .
Max. 100 5 1 2
Un it A mA mA mA V
V CEO(sus ) Collector-Emitter Sustaining Voltage (IB = 0) V CE(sat ) V BE(s at) h FE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain
IC = 5 A I C = 10 A IC = 5 A I C = 10 A IC = 3 A IC = 5 A I C = 10 A IF = 5 A I F = 10 A IC = 1 A f = 1 MHz
I B = 20 mA I B = 100 mA I B = 20 mA I B = 100 mA V CE = 3 V V CE = 3 V V CE = 3 V 1000 750 100 1.3 1.8 V CE = 10 V 20
2 3 2.5 4 20000 2 4
V V V V
VF * hf e
Parallel-diode Forward Voltage Small Signal Current Gain
V V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP types voltage and current values are negative.
Safe Operating Area
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BDW93CFP / BDW94CFP
TO-220FP MECHANICAL DATA
DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
A
B
L3 L6 L7 F1 F
D
G1
E
H
F2
123 L2 L4
G
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BDW93CFP / BDW94CFP
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . ..
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