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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3053
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3053 is N-Channel MOS Field Effect Transistor designed for high current switching applications in consumer instruments.
ORDERING INFORMATION
PART NUMBER 2SK3053 PACKAGE Isolated TO-220
FEATURES
* Low On-State Resistance RDS(on)1 = 45 m MAX. (VGS = 10 V, ID = 13 A) RDS(on)2 = 70 m MAX. (VGS = 4.0 V, ID = 13 A) * Low Ciss : Ciss = 790 pF TYP. * Built-in Gate Protection Diode * Isolated TO-220 package (Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage Gate to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse)
Note1
VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg
Note2 Note2
60 20 +20, -10 25 75 30 2.0 150 -55 to +150 12.5 15.6
V V V A A W W C C A mJ
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
IAS EAS
Notes 1. PW 10 s, Duty cycle 1 % ! 2. Starting Tch = 25 C, VDD = 30 V, RG = 25 , VGS = 20 V 0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D12912EJ3V0DS00 (3rd edition) Date Published May 2001 NS CP(K) Printed in Japan
The mark ! shows major revised points.
(c)
1999, 2000
2SK3053
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 10 V, ID = 13 A VGS = 4.0 V, ID = 13 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 13 A VDS = 60 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 13 A VGS = 10 V VDD = 30 V RG = 10 ID = 25 A VDD = 48 V VGS = 10 V IF = 25 A, VGS = 0 V IF = 25 A, VGS = 0 V di/dt = 100 A/s 790 240 100 20 200 65 95 20 3.0 6.5 1.0 40 45 1.0 8.0 MIN. TYP. 28 46 1.6 16 10 10 MAX. 45 70 2.0 UNIT m m V S
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
!
Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge
!
Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V BVDSS VDS 50 L VDD
!
TEST CIRCUIT 2 SWITCHING TIME
D.U.T. RL PG. RG VDD ID
90 % 90 %
VGS VGS
Wave Form
90 %
0
10 %
IAS ID VDD
VGS 0 = 1 s Duty Cycle 1 %
ID ID
Wave Form
0 10 %
10 %
td(on) ton
tr td(off)
toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA 50 RL VDD
PG.
2
Data Sheet D12912EJ3V0DS
2SK3053
TYPICAL CHARACTERISTICS (TA = 25 C )
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 35
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
0 20 40 60 80 100 120 140 160
100 80 60 40 20 0
30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160
Tch - Channel Temperature - C
TC - Case Temperature - C
!
1000
FORWARD BIAS SAFE OPERATING AREA
ID - Drain Current - A
100
d ite im 0 V) )L 1 (on DS GS = RV ID(DC) (at
PW
ID(pulse)
10 0m s
10 0 s
=1 0 s
10
1m s
1 TC = 25C Single Pulse 1
Po 10 we m rD s iss ipa tio nL im ite d
0.1 0.1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(t) - Transient Thermal Resistance - C/W
100 Rth(ch-A) = 62.5 C/W 10 Rth(ch-C) = 4.17 C/W 1
0.1 Single Pulse 0.01 10 100 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
Data Sheet D12912EJ3V0DS
3
2SK3053
FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
100
ID - Drain Current - A ID - Drain Current - A
100
80 60 40 20 0 Pulsed 0 1.0 2.0 3.0 4.0 VGS =10 V
10 TA = -50C 25C 75C 150C VDS = 10 V 4 5
1
4.0 V
0.1
0
1
2
3
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 75 Pulsed
100 VDS = 10 V Pulsed
10 TA = 150C 75C 25C -50C 1
50
ID = 13 A 25
0.1 0.1
0
1
10
100
0
10 VGS - Gate to Source Voltage - V
20
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
VGS(th) - Gate to Source Threshold Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 75 Pulsed
GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 2.0 VDS = 10 V ID = 1 mA
50 VGS = 4.0 V 10 V 25
1.5
1.0
0.5
0 0.1
0
1
10
100
-50
0
50
100
150
ID - Drain Current - A
Tch - Channel Temperature - C
4
Data Sheet D12912EJ3V0DS
2SK3053
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 1000
ISD - Diode Forward Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed
80 VGS = 4.0 V
60
100 VGS = 10 V 10 VGS = 0 V
40
10 V
20
ID = 13 A Pulsed
1
0
-50
0
50
100
150
0.1 0
0.5
1.0
1.5
Tch - Channel Temperature - C
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
Ciss, Coss, Crss - Capacitance - pF td(on), tr, td(off), tf - Switching Time - ns
SWITCHING CHARACTERISTICS 1000 tr
VGS = 0 V f = 1 MHz
1000
Ciss
100
td(off) tf td(on)
Coss 100 Crss
10
10 0.1
1
10
100
1 0.1
1
10
100
VDS - Drain to Source Voltage - V
ID - Drain Current - A
REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000
trr - Reverse Recovery Time - ns VDS - Drain to Source Voltage - V
di/dt = 100 A/s VGS = 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 80 16
VGS - Gate to Source Voltage - V
60
100
VDD = 48 V 30 V 12 V
12 VGS 8
40
10
20 VDS 0 0 4 8 12 16 20 24 ID = 25 A 28 32
4
1 0.1
1.0
10
100
IF - Drain Current - A
QG - Gate Charge - nC
Data Sheet D12912EJ3V0DS
5
2SK3053
!
100
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD
160 140
SINGLE AVALANCHE ENERGY DERATING FACTOR
VDD = 30 V RG = 25 VGS = 20 V 0 V IAS 12.5 A
IAS - Single Avalanche Current - A
Energy Derating Factor - %
IAS = 12.5 A 10
120 100 80 60 40 20
EAS
=1
5.6
mJ
1
VDD = 30 V VGS = 20 V 0 V RG = 25 Starting Tch = 25C
0.1 10
100
1m
10 m
0 25
50
75
100
125
150
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D12912EJ3V0DS
2SK3053
PACKAGE DRAWING
Isolated TO-220 (MP-45F)
10.0 0.3
3.2 0.2
4.5 0.2 2.7 0.2
EQUIVALENT CIRCUIT
15.0 0.3 3 0.1 12.0 0.2
Drain (D)
4 0.2
13.5MIN.
Gate (G) Gate Protection Diode Source (S)
Body Diode
0.7 0.1 2.54
1.3 0.2 2.5 0.1 1.5 0.2 0.65 0.1 2.54 1.Gate 2.Drain 3.Source 123
Remark 1. This product is designed for consumer application and isn't suitable for automotive application. 2. The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Data Sheet D12912EJ3V0DS
7
2SK3053
* The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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