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Power Transistors
2SC3982, 2SC3982A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
20.00.5
Unit: mm
3.30.2 5.00.3 3.0
6.0
s Features
q q q q
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE (TC=25C)
Ratings 900 1000 900 1000 800 7 15 10 5 150 3.5 150 -55 to +150 Unit V
26.00.5
10.0
1.5
2.0
4.0
1.5
20.00.5 2.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SC3982 2SC3982A 2SC3982 VCES VCEO VEBO ICP IC IB Ta=25C PC Tj Tstg Symbol VCBO
2.00.3 3.00.3 1.00.2
2.70.3
0.60.2 5.450.3 10.90.5
emitter voltage 2SC3982A Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Junction temperature Storage temperature
V V V A A A W C C
1 2 3
1:Base 2:Collector 3:Emitter TOP-3L Package
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time 2SC3982 2SC3982A
(TC=25C)
Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 900V, IE = 0 VCB = 1000V, IE = 0 VEB = 7V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 4A IC = 4A, IB = 0.8A IC = 4A, IB = 0.8A VCE = 5V, IC = 1A, f = 1MHz IC = 4A, IB1 = 0.8A, IB2 = -1.6A, VCC = 250V 15 0.7 3.0 0.3 800 8 6 1.5 1.5 V V MHz s s s min typ max 50 50 50 Unit A A V
2.0
1.5
3.0
1
Power Transistors
PC -- Ta
200 12 TC=25C (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3.5W) IB=2A 10
2SC3982, 2SC3982A
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=5 30 10 3 1 0.3 0.1 0.03 0.01 0.1 25C TC=100C -25C
VCE(sat) -- IC
Collector power dissipation PC (W)
150
Collector current IC (A)
(1)
1A 8 0.5A 6 0.4A 0.3A 4 0.2A 2 0.1A 0.05A 0
100
50
(2) 0 0 20 40
(3) 60 80 100 120 140 160 0 2 4 6 8
10
12
0.3
1
3
10
30
100
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) -- IC
100
hFE -- IC
IC/IB=5 1000 VCE=5V 100
fT -- IC
VCE=5V f=1MHz TC=25C
Base to emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
30
300
Transition frequency fT (MHz)
3 10 30 100
30
10
100 TC=100C 25C -25C
10
3
30
3
1
TC=-25C 100C 25C
10
1
0.3
3
0.3
0.1 0.1
0.3
1
3
10
30
100
1 0.1
0.3
1
0.1 0.01 0.03
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Cob -- VCB
10000 100 IE=0 f=1MHz TC=25C 30
ton, tstg, tf -- IC
Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=-IB2) VCC=200V TC=25C tstg
Area of safe operation (ASO)
100 30 Non repetitive pulse TC=25C ICP IC 0.5ms 1ms 1 0.3 0.1 0.03 0.01 10ms DC t=0.1ms
Collector output capacitance Cob (pF)
Switching time ton,tstg,tf (s)
3000
Collector current IC (A)
8
10 3 1 0.3 0.1 0.03
10 3
1000
300
100
tf ton
30
10 1 3 10 30 100
0.01 0 1 2 3 4 5 6 7
1
3
10
30
100
300
1000
Collector to base voltage VCB (V)
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
Power Transistors
Area of safe operation, reverse bias ASO
16 14 ICP Lcoil=100H IC/IB=5 (IB1=-IB2) TC=25C
2SC3982, 2SC3982A
Reverse bias ASO measuring circuit
L coil IB1 T.U.T IC
Collector current IC (A)
12 10 8 6 4 2 0 0
2SC3982A 2SC3982
IC
Vin
-IB2
VCC
tW
Vclamp
200 400 600 800 1000 1200 1400 1600
Collector to emitter voltage VCE (V)
Rth(t) -- t
103 (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink
Thermal resistance Rth(t) (C/W)
102 (1) 10
(2)
1
10-1 10-3
10-2
10-1
1
10
102
103
104
Time t (s)
3

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