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| Transistor 2SA1309A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SC3311A Unit: mm 4.00.2 3.00.2 s Features q q q Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings -60 -50 -7 -200 -100 300 150 -55 ~ +150 Unit V V V mA mA mW C C 1:Emitter 2:Collector 3:Base 1 2 3 1.27 1.27 2.540.15 EIAJ:SC-72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE fT Cob * Conditions VCB = -10V, IE = 0 VCE = -10V, IB = 0 IC = -10A, IE = 0 IC = -2mA, IB = 0 IE = -10A, IC = 0 VCE = -10V, IC = -2mA IC = -50mA, IB = -5mA VCB = -10V, IE = 1mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz min typ max -100 -1 2.00.2 (Ta=25C) 0.70.1 marking +0.2 0.45-0.1 s Absolute Maximum Ratings 15.60.5 High foward current transfer ratio hFE. Allowing supply with the radial taping. Optimum for high-density mounting. Unit nA A V V V -60 -50 -7 160 460 - 0.3 80 3.5 VCE(sat) V MHz pF *h FE Rank classification Q 160 ~ 260 R 210 ~ 340 S 290 ~ 460 hFE Rank 1 Transistor PC -- Ta 500 120 Ta=25C 450 100 -200 2SA1309A IC -- VCE -240 VCE=-5V IC -- VBE Collector power dissipation PC (mW) Collector current IC (mA) 400 350 300 250 200 150 100 50 0 20 40 60 80 100 120 140 160 80 IB=-300A 60 -250A -200A 40 -150A -100A 20 -50A 0 0 -2 -4 -6 -8 -10 -12 Collector current IC (mA) -160 Ta=75C 25C -25C -120 -80 -40 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -10 -3 -1 Ta=75C 25C -25C IC/IB=10 600 hFE -- IC 160 VCE=-5V VCB=-10V Ta=25C 140 120 100 80 60 40 20 0 -1 0 - 0.1 - 0.3 fT -- IE Forward current transfer ratio hFE 500 400 Ta=75C 300 25C -25C 200 - 0.3 - 0.1 - 0.03 - 0.01 100 - 0.003 - 0.001 -1 -3 -10 -30 -100 -300 -1000 -3 -10 -30 -100 -300 -1000 Transition frequency fT (MHz) -1 -3 -10 -30 -100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB 10 Collector output capacitance Cob (pF) 9 8 7 6 5 4 3 2 1 0 -1 IE=0 f=1MHz Ta=25C -3 -10 -30 -100 Collector to base voltage VCB (V) 2 |
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