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PD - 91354A
IRFZ24N
HEXFET(R) Power MOSFET
l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 55V
G S
RDS(on) = 0.07 ID = 17A
Description
Fifth Generation HEXFET (R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
17 12 68 45 0.30 20 71 10 4.5 5.0 -55 to + 175 300 (1.6mm from case) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Min.
---- ---- ----
Typ.
---- 0.50 ----
Max.
3.3 ---- 62
Units
C/W
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9/13/99
IRFZ24N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. 55 --- --- 2.0 4.5 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.052 --- --- --- --- --- --- --- --- --- --- 4.9 34 19 27
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.07 VGS = 10V, ID = 10A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 10A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 20 ID = 10A 5.3 nC VDS = 44V 7.6 VGS = 10V, See Fig. 6 and 13 --- VDD = 28V --- ID = 10A ns --- RG = 24 --- RD = 2.6, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH from package --- 7.5 --- and center of die contact 370 --- VGS = 0V 140 --- pF VDS = 25V 65 --- = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Q rr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 56 120 17 A 68 1.3 83 180 V ns nC
Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 10A, VGS = 0V TJ = 25C, IF = 10A di/dt = 100A/s
D
G S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD 10A, di/dt 280A/s, VDD V(BR)DSS,
TJ 175C
VDD = 25V, starting TJ = 25C, L = 1.0mH
RG = 25, IAS = 10A. (See Figure 12)
Pulse width 300s; duty cycle 2%.
2
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IRFZ24N
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
I , D rain-to-S ource C urrent (A ) D
10
I , D rain-to-S ource C urrent (A ) D
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
10
4 .5V
4.5V 20 s P U LS E W ID TH TC = 2 5C
0.1 1 10 100
1
A
1 0.1 1
2 0 s P U L S E W ID T H T C = 17 5C
10 100
A
V D S , D rain-to-S ourc e V oltage (V )
V DS , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics, TJ = 25oC
Fig 2. Typical Output Characteristics, TJ = 175oC
100
3.0
R D S (on) , Drain-to-S ource O n Resistance (N orm alized)
I D = 1 7A
I D , D rain-to-So urce C urren t (A )
2.5
TJ = 2 5 C T J = 1 7 5 C
2.0
10
1.5
1.0
0.5
1 4 5 6 7
V DS = 2 5V 2 0 s P U L S E W ID TH
8 9 10
A
0.0 -60 -40 -20 0 20 40 60 80
V G S = 10 V
100 120 140 160 180
A
V G S , G ate-to -So urce Voltag e (V)
T J , Junction T em perature (C )
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFZ24N
700
600
C , Capacitance (pF)
500
C iss
400
C oss
300
V G S , G ate-to-S ource V oltage (V )
V GS C is s C rs s C o ss
= = = =
0V , f = 1M H z C g s + C g d , Cd s S H O R T E D C gd C d s + C gd
20
I D = 10 A V D S = 44 V V D S = 28 V
16
12
8
200
C rss
4
100
0 1 10 100
A
0 0 4 8
FO R TE S T C IR C U IT S E E FIG U R E 1 3
12 16 20
A
V D S , D rain-to-S ourc e V oltage (V )
Q G , T otal G ate C harge (nC )
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
I S D , Reverse D rain C urrent (A)
O P E R A TIO N IN TH IS A R E A L IM ITE D B Y R D S (o n)
T J = 1 75 C TJ = 25 C
10
I D , Drain C urrent (A )
100 10 s
10
100 s
1 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V G S = 0V
1.8
A
1 1
T C = 25 C T J = 17 5C S ing le P u lse
10
1m s 10m s 100
A
2.0
V S D , S ourc e-to-D rain V oltage (V )
V D S , D rain-to-S ource V oltage (V )
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFZ24N
VDS
20
RD
VGS RG
16
D.U.T.
+
I D , D rain C u rren t (A m ps )
- VDD
10V
12 Pulse Width 1 s Duty Factor 0.1 %
8
Fig 10a. Switching Time Test Circuit
VDS
4
90%
0 25 50 75 100 125 150
A
175
TC , C ase T em perature (C )
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
10
Fig 10b. Switching Time Waveforms
T h erm a l R e s p o n s e (Z th JC )
D = 0.5 0
1
0 .2 0 0 .1 0 0.0 5 0.02 0.01 S IN G L E P U L S E (T H E R M A L R E S P O N S E )
N o te s : 1 . D u ty f ac to r D = t
PD M
0.1
t
1 t2
1
/t
2
0.01 0.00001
2 . P e a k T J = P D M x Z th J C + T C
A
1
0.0001
0.001
0.01
0.1
t 1 , R ectang ular P ulse D uration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFZ24N
L
E A S , S ingle P ulse A valanche E nergy (m J)
VDS D.U.T. RG + V - DD
10 V
140
TO P
120
B O TTO M
100
ID 4.2 A 7.2A 1 0A
IAS tp
0.01
80
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp VDD VDS
60
40
20
0
V D D = 25 V
25 50 75 100 125 150
A
175
S tarting T J , J unc tion T em perature (C )
IAS
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFZ24N
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) power MOSFETs
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IRFZ24N
Package Outline
TO-220AB Dimensions are shown in millimeters (inches)
2.87 (.11 3) 2.62 (.10 3) 10 .54 (.4 15) 10 .29 (.4 05) 3 .7 8 (.149 ) 3 .5 4 (.139 ) -A 6.47 (.25 5) 6.10 (.24 0) -B 4.69 ( .18 5 ) 4.20 ( .16 5 ) 1 .32 (.05 2) 1 .22 (.04 8)
4 1 5.24 (.60 0) 1 4.84 (.58 4)
1.15 (.04 5) M IN 1 2 3
L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN
1 4.09 (.55 5) 1 3.47 (.53 0)
4.06 (.16 0) 3.55 (.14 0)
3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 )
0.93 (.03 7) 0.69 (.02 7) M BAM
3X
0.55 (.02 2) 0.46 (.01 8)
0 .3 6 (.01 4)
2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H
2 .92 (.11 5) 2 .64 (.10 4)
3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 -A B . 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .
Part Marking Information
TO-220AB
E X A M P L E : TH IS IS A N IR F1 0 1 0 W IT H A S S E M B L Y LOT C ODE 9B1M
A
IN TE R N A TIO N A L R E C TIF IE R LOGO ASSEMBLY LOT CO DE
PART NU MBER IR F 10 1 0 9246 9B 1M
D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 9/99
8
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