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DATA SHEET
BLF544B UHF push-pull power MOS transistor
Product specification October 1992
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
FEATURES * High power gain * Easy power control * Good thermal stability * Gold metallization ensures excellent reliability * Designed for broadband operation. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors. PINNING - SOT268 PIN 1 2 3 4 5 gate 1 drain 1 gate 2 drain 2 source DESCRIPTION
5 1 Top view 3
MBB930
BLF544B
PIN CONFIGURATION
lfpage
2
4 g2 g1
d2 s d1
MBB157
Fig.1 Simplified outline and symbol.
CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA RF performance at Th = 25 C in a push-pull common source test circuit. MODE OF OPERATION CW, class-B f (MHz) 500 VDS (V) 28 PL (W) 20 Gp (dB) > 12 D (%) > 50
October 1992
2
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Per transistor section unless otherwise specified. SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature up to Tmb = 25 C; total device; both sections equally loaded CONDITIONS - - - - -65 - MIN.
BLF544B
MAX. 65 20 2 48 150 200
UNIT V V A W C C
THERMAL RESISTANCE SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS total device; both sections equally loaded total device; both sections equally loaded THERMAL RESISTANCE 3.7 K/W 0.25 K/W
handbook, halfpage
10
MRA993
handbook, halfpage
80
MDA515
ID (A)
(1) (2)
Ptot (W) 60
(1)
1
40
(2)
20
10-1 1 10 VDS (V)
102
0 0 40 80 120 Th ( C) 160
(1) Current in this area may be limited by RDS(on). (2) Tmb = 25 C. Total device; both sections equally loaded.
(1) Short-time operation during mismatch. (2) Continuous operation. Total device; both sections equally loaded.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
October 1992
3
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
CHARACTERISTICS (per section) Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGS(th) gfs RDS(on) IDSX Cis Cos Crs PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage forward transconductance drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance CONDITIONS ID = 5 mA; VGS = 0 VGS = 0; VDS = 28 V VGS = 20 V; VDS = 0 ID = 20 mA; VDS = 10 V ID = 0.6 A; VDS = 10 V ID = 0.6 A; VGS = 10 V VGS = 15 V; VDS = 10 V VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz MIN. 65 - - 1 300 - - - - -
BLF544B
TYP. - - - - 450 0.7 2.4 16 12 3.2
MAX. UNIT - 0.5 1 4 - 2.5 - - - - V mA A V mS A pF pF pF
handbook, halfpage
4
MDA491
handbook, halfpage
3
MDA495
T.C. (mV/K) 2
ID (A) 2
0
1 -2
-4 10-2
10-1
0 ID (A) 1 0 5 10 15 VGS (V) 20
VDS = 10 V.
VDS = 10 V.
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current, typical values per section.
Fig.5
Drain current as a function of gate-source voltage, typical values per section.
October 1992
4
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF544B
handbook, halfpage
4
MDA496
handbook, halfpage
RDSon () 3
50 C (pF)
MDA497
40
30 2 20 1 10 Cis Cos
0 0 50 100 Tj ( C) 150
0 0 10 20 VDS (V) 30
ID = 0.6 A; VGS = 10 V.
VGS = 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a function of junction temperature, typical values per section.
Fig.7
Input and output capacitance as functions of drain-source voltage, typical values per section.
handbook, halfpage
20 Crs (pF) 16
MDA498
12
8
4
0 0 10 20 VDS (V) 30
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of drain-source voltage, typical values per section.
October 1992
5
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 C; Rth mb-h = 0.4 K/W; unless otherwise specified. RF performance in a push-pull, common source, class-B test circuit. MODE OF OPERATION CW, class-B f (MHz) 500 VDS (V) 28 IDQ (mA) 2 x 20 PL (W) 20 GP (dB) > 12 typ. 15
BLF544B
D (%) > 50 typ. 60
Ruggedness in class-B operation The BLF544B is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases, under the following conditions: VDS = 28 V, f = 500 MHz at rated output power.
handbook, halfpage
25 Gp
MDA517
80 D (%) 70
handbook, halfpage
30
MDA516
(dB) 20
Gp
PL (W) 20
15 D
60
10
50 10
5
40
0 0 10 20 PL (W)
30 30
0 0 0.4 0.8 1.2 2 1.6 PIN (W)
Class-B operation; VDS = 28 V; IDQ = 2 x 20 mA; ZL = 8.4 + j14.3 ; f = 500 MHz.
Class-B operation; VDS = 28 V; IDQ = 2 x 20 mA; ZL = 8.4 + j14.3 ; f = 500 MHz.
Fig.9
Power gain and efficiency as functions of output power, typical values.
Fig.10 Load power as a function of input power, typical values.
October 1992
6
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF544B
handbook, full pagewidth
VBIAS
R2
R3 C10
+VD
C14 C18
R4 C8
C11
R7
L20 C15
50 input
,, ,,,,, ,,,,,,,, ,, ,,,,, ,,,,,,,, ,, ,,,,, ,,,,,,,,
R5 D.U.T. L16 L1 C3 L4 L6 L8 L10 L12 L14 L18 L22 L24 C23 L26 L2 C1 R1 C2 L27 C5 C6 C7 C20 C21 C22 C24 L3 C4 L5 L7 L9 L11 L13 R6 C9 C12 R11 L21
MBK460
50 output
L15
L19
L23
L25
L28
BLF544B
L17 C16
R7 C13
C19 C17 VBIAS R8 R9 +VD
f = 500 MHz.
Fig.11 Test circuit for class-B operation.
October 1992
7
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
List of components (class-B test circuit) COMPONENT C1, C2 C3, C4, C6 C5 C7, C21, C22 C8, C9, C15, C16 C10, C13 DESCRIPTION multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) film dielectric trimmer film dielectric trimmer multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor VALUE 9.1 pF, 500 V 18 pF, 500 V 2 to 9 pF 2 to 18 pF 390 pF, 500 V 2 x 100 nF in parallel, 50 V 100 nF, 50 V 10 F, 63 V 6.8 pF, 500 V 16 pF, 500 V 50 50 56 x 2.4 mm ext. dia. 2.2 mm ext. conductor length 56 mm 8 x 2 mm 15.5 x 2 mm 10 x 3 mm 5 x 3 mm 6 x 3 mm length 8.5 mm int. dia. 5.4 mm leads 2 x 5 mm 22 x 2 mm DIMENSIONS
BLF544B
CATALOGUE NO.
2222 809 09005 2222 809 09006
2222 852 47104 2222 852 47104 2222 030 38109
C11, C12, C14, C17 multilayer ceramic chip capacitor C18, C19 C20 C23, C24 L1, L3, L26, L28 L2 electrolytic capacitor multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) stripline (note 2) semi-rigid cable (note 3)
L4, L5 L6, L7 L8, L9 L10, L11 L12, L13, L14, L15 L16, L17
stripline (note 2) stripline (note 2) stripline (note 2) stripline (note 2) stripline (note 2) 6 turns enamelled 1 mm copper wire stripline (note 2) grade 3B Ferroxcube RF choke stripline (note 2) stripline (note 2) semi-rigid cable (note 3)
56 56 42 42 42 124 nH
L18, L19 L20, L21 L22, L23 L24, L25 L27
56 56 56 50
4312 020 36642 18 x 2 mm 16 x 2 mm ext. dia. 2.2 mm ext. conductor length 56 mm 2322 151 75628 2322 151 71159 2322 151 75901 2322 151 74649 2322 153 51009
R1 R2, R8 R3, R9 R4, R7 R5, R6 R10, R11
0.4 W metal film resistor 0.4 W metal film resistor 10 turns potentiometer 0.4 W metal film resistor 0.4 W metal film resistor 1 W metal film resistor
5.62 11.5 k 5 k 590 46.4 10
October 1992
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Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
BLF544B
2. The striplines are on a double copper-clad printed circuit board, with epoxy glass dielectric (r = 2.2), thickness 132 inch. 3. Semi-rigid cables L2 and L27 are soldered on to striplines L1 and L26.
200
handbook, full pagewidth
mounting screw
rivet strap 85
mounting screw
straps
R3 R10 C18 C10 R4 L1 + L2 C1 C3 L4 R1 L5 C2 C4 C5 C11 C8 L16 L14 L15 L18 C20 L19 C21 L17 C16 L21 C19 R11 R9 L20 C15
+Vds C14
L26 + L27 C23 L24 C22 L25 C24
L6 L7
R5 L8 L10 L12 C6 C7 L13 L9 L11 R6 C12 C9 R7 C13
L22 L23
L3
L28
C17 +Vds
MDA514
The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as a ground. Earth connections are made by means of copper straps and hollow rivets for a direct contact between the upper and lower sheets. Dimensions in mm.
Fig.12 Component layout for 500 MHz test circuit.
October 1992
9
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF544B
handbook, halfpage
10
MDA492
handbook, halfpage
40
MDA494
Zi () 0
ri
ZL () 30
RL
-10 xi
20
XL
-20
10
-30
0 0 200 400 f (MHz) 600 0 200 400 f (MHz) 600
Class-B operation; VDS = 28 V; IDQ = 2 x 20 mA; PL = 20 W.
Class-B operation; VDS = 28 V; IDQ = 2 x 20 mA; PL = 20 W.
Fig.13 Input impedance as a function of frequency (series components), typical values per section.
Fig.14 Load impedance as a function of frequency (series components), typical values per section.
handbook, halfpage
30
MDA493
Gp (dB) 20
10
0 0 200 400 f (MHz) 600
Class-B operation; VDS = 28 V; IDQ = 2 x 20 mA; PL = 20 W.
Fig.15 Power gain as a function of frequency, typical values per section.
October 1992
10
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads
BLF544B
SOT268A
D
A F
5
U1 q H1 w2 M C C
B
c
1
4
H
U2
P
E
w1 M A B A
2
b e
3
w3 M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.91 4.19 0.193 0.165 b 1.66 1.39 c 0.13 0.07 D 12.96 12.44 0.510 0.490 E 6.48 6.22 e 6.45 F 2.04 1.77 H 17.02 16.00 H1 8.23 7.72 p 3.43 3.17 Q 2.67 2.41 q 18.42 U1 24.90 24.63 0.980 0.970 U2 6.61 6.35 0.260 0.250 w1 0.51 0.02 w2 1.02 0.04 w3 0.26 0.01
0.065 0.005 0.055 0.003
0.255 0.080 0.670 0.254 0.245 0.070 0.630
0.324 0.135 0.304 0.125
0.105 0.725 0.095
OUTLINE VERSION SOT268A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
October 1992
11
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF544B
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
October 1992
12

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