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May 1997
NDH8521C Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
N-Ch 3.8 A, 30 V, RDS(ON)=0.033 @ VGS=10 V RDS(ON)=0.05 @ VGS=4.5 V P-Ch -2.7 A, -30 V,RDS(ON)=0.07 @ VGS=-10 V RDS(ON)=0.115 @ VGS=-4.5 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability.
________________________________________________________________________________
5 6 7 8
4 3 2 1
Absolute Maximum Ratings
Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed PD TJ,TSTG
T A= 25C unless otherwise noted
N-Channel 30 20
(Note 1)
P-Channel -30 20 -2.7 -8 0.8 -55 to 150
Units V V A
3.8 10.5
Power Dissipation for Single Operation
(Note 1)
W C
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1) (Note 1)
156 40
C/W C/W
(c) 1997 Fairchild Semiconductor Corporation
NDH8521C Rev.C
Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A VGS = 0 V, ID = -250 A Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V TJ = 55oC VDS = -24 V, VGS = 0 V TJ = 55 C IGSSF IGSSR VGS(th) Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 20 V, VDS = 0 V VGS = -20 V, VDS= 0 V VDS = VGS, ID = 250 A TJ = 125oC VDS = VGS, ID = -250 A TJ = 125oC RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 3.8 A TJ = 125oC VGS = 4.5 V, ID = 3.2 A VGS = -10 V, ID = -2.7 A TJ = 125oC VGS = -4.5 V, ID = - 2.1 A ID(on) On-State Drain Current VGS = 10 V, VDS = 5 V VGS = 4.5 V, VDS = 5 V VGS = -10 V, VDS = -5 V VGS = -4.5 V, VDS = -5 V gFS Forward Transconductance VDS = 5 V, ID = 3.8 A VDS = -5 V, ID = -2.7 A DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance N-Channel VDS = 15 V, VGS = 0 V, f = 1.0 MHz P-Channel VDS = -15 V, VGS = 0 V, f = 1.0 MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 500 560 310 340 125 130 pF pF pF N-Ch P-Ch P-Ch N-Ch 10.5 9 -8 -3 9 5.5 S P-Ch N-Ch P-Ch All All
o
N-Ch P-Ch N-Ch
30 -30 1 10
V V A A A A nA nA
P-Ch
-1 -10 100 -100
ON CHARACTERISTICS (Note 2) Gate Threshold Voltage N-Ch 1 0.8 -1 -0.8 1.67 1.04 -1.6 -1.2 0.027 0.04 0.041 0.062 0.088 0.102 2 1.6 -2 -1.6 0.033 0.063 0.05 0.07 0.125 0.115 A V
Output Capacitance Reverse Transfer Capacitance
NDH8521C Rev.C
Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol Parameter Conditions Type Min Typ Max Units SWITCHING CHARACTERISTICS (Note 2) tD(on) tr tD(off) tf Qg Qgs Qgd Turn - On Delay Time Turn - On Rise Time N-Channel VDD = 10 V, ID = 1 A, VGEN = 10 V, RGEN = 6 P-Channel VDD = -10 V, ID = -1 A, VGEN = -10 V, RGEN = 6 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Total Gate Charge Gate-Source Charge N-Channel VDS = 15 V, ID = 3.8 A, VGS = 10 V P-Channel VDS = -15 V, ID = -2.7 A, VGS = -10 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage N-Ch P-Ch VGS = 0 V, IS = 0.67 A VGS = 0 V, IS = -0.67 A
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. (Note2) (Note2)
10 13 15 16 20 35 9 40 18 19 1.8 3.8 4.2 4.7
18 25 28 30 35 70 18 80 25 27
ns ns
Turn - Off Delay Time
ns
Turn - Off Fall Time
ns
nC nC
Gate-Drain Charge
nC
0.67 -0.67 0.72 -0.74 1.2 -1.2
A V
N-Ch P-Ch
PD(t) =
R JA(t)
T J -TA
=
T J -TA R JC+RCA(t)
= I 2 (t) x RDS(ON ) D
Typical RJA for single device operation using the board layout shown below on 4.5"x5" FR-4 PCB in a still air environment:
TJ
156oC/W when mounted on a 0.0025 in2 pad of 2oz copper.
Scale 1 : 1 on letter size paper. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
NDH8521C Rev.C
Typical Electrical Characteristics: N-Channel
20 2.5
V GS =10V
I D , DRAIN-SOURCE CURRENT (A) 16
6.0 5.0
4.5 4.0
R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = 3.5V
2.25 2 1.75 1.5 1.25 1 0.75
4.0 4.5 5.0 6.0 7.0 10
12
3.5
8
4
3.0
0 0 0.5 V
DS
1 1.5 2 , DRAIN-SOURCE VOLTAGE (V)
2.5
3
0
4
8 12 I D , DRAIN CURRENT (A)
16
20
Figure 1. N-Channel On-Region Characteristics.
Figure 2. N-Channel On-Resistance Variation with Gate Voltage and Drain Current.
1 .8
2
I D = 3.8A
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE 1 .6
V
1.75
V GS = 10V
R DS(on), NORMALIZED
GS
= 10V TJ = 125C
R DS(ON) , NORMALIZED
1 .4
1.5 1.25
1 .2
25C
1 0.75
1
0 .8
-55C
0.5 0.25 0 4 I
D
0 .6 -50
-25
0
J
25
50
75
100
125
150
T , JUNCTION TEMPERATURE (C)
8 12 , DRAIN CURRENT (A)
16
20
Figure 3. N-Channel On-Resistance Variation with Temperature.
Figure 4. N-Channel On-Resistance Variation with Drain Current and Temperature.
20
1.2
25C
16 I , DRAIN CURRENT (A)
GATE-SOURCE THRESHOLD VOLTAGE
V DS = 5V
T = -55C J
VDS = VGS
1.1
I D = 250A
125C
12
V th, NORMALIZED
1
0.9
8
0.8
D
4
0.7
0 1 1.5 V
GS
2 2.5 3 3.5 , GATE TO SOURCE VOLTAGE (V)
4
4.5
0.6 -50
-25
0 25 50 75 100 T , JUNCTION TEMPERATURE (C)
J
125
150
Figure 5. N-Channel Transfer Characteristics.
Figure 6. N-Channel Gate Threshold Variation with Temperature.
NDH8521C Rev.C
Typical Electrical Characteristics: N-Channel (continued)
1.12 DRAIN-SOURCE BREAKDOWN VOLTAGE 15
I
1.08
D
= 250A
I , REVERSE DRAIN CURRENT (A)
5 1
VGS =0V TJ = 125C 25C -55C
BV DSS , NORMALIZED
1.04
0 .1
1
0 .0 1
0.96
0 .0 0 1
0.92 -50
S
-25
0 T
J
25 50 75 100 , JUNCTION TEMPERATURE (C)
125
150
0 .0 0 0 1 0 0 .2 V
SD
0 .4 0.6 0 .8 1 , BODY DIODE FORWARD VOLTAGE (V)
1 .2
Figure 7. N-Channel Breakdown Voltage Variation with Temperature.
Figure 8. N-Channel Body Diode Forward Voltage Variation with Current and Temperature.
1500 1000 800 CAPACITANCE (pF) 500 300 200
10
I D = 3.8A
V GS, GATE-SOURCE VOLTAGE (V) 8
VDS = 10V
15V 20V
Ciss Coss
6
4
Crss
100
f = 1 MHz V GS = 0 V
2
50 0 .1
0 .2 V
0 .5
DS
1
3
5
10
30
0 0 5 10 Q g , GATE CHARGE (nC) 15 20
, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. N-Channel Capacitance Characteristics.
Figure 10. N-Channel Gate Charge Characteristics.
20
V DS = 5V
, TRANSCONDUCTANCE (SIEMENS) 16
TJ = -55C 25C
12
125C
8
4
g 0 0 4 I
D
FS
8
12
16
20
, DRAIN CURRENT (A)
Figure 11. N-Channel Transconductance Variation with Drain Current and Temperature.
NDH8521C Rev.C
Typical Electrical Characteristics: P-Channel (continued)
-10 VGS = -10V -6.0 -5.0 -4.5
, DRAIN-SOURCE CURRENT (A)
3
DRAIN-SOURCE ON-RESISTANCE
-8
-4.0
R DS(on) NORMALIZED ,
2.5
V GS = -3.5V
-6
-3.5
2
-4.0 -4.5 -5.0 -6.0 -7.0 -10
-4 -3.0 -2
1.5
1
I
D
0
0.5
0
-0.5
-1
-1.5
-2
-2.5
-3
0
-2 I
D
V DS , DRAIN-SOURCE VOLTAGE (V)
-4 -6 , DRAIN CURRENT (A)
-8
-10
Figure 12. P-Channel On-Region Characteristics.
Figure 13. P-Channel On-Resistance Variation with Gate Voltage and Drain Current.
1.6
1.8
I D = -2.7A
R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE
V GS = -10V 1.6 1.4 1.2 1
DRAIN-SOURCE ON-RESISTANCE
1.4
V GS = -10V
TJ = 125C
R DS(ON), NORMALIZED
1.2
25C -55C
1
0.8 0.6 0.4
0.8
0.6 -50
-25
0 25 50 75 100 T , JUNCTION TEMPERATURE (C)
J
125
150
0
-2
-4 -6 I D , DRAIN CURRENT (A)
-8
-10
Figure 14. P-Channel On-Resistance Variation with Temperature.
Figure 15. P-Channel On-Resistance Variation with Drain Current and Temperature.
-10 GATE-SOURCE THRESHOLD VOLTAGE
1.2
V DS = -10V
-8 I D, DRAIN CURRENT (A)
T
J
= -55C 125C
25C
VDS = V GS
1.1
I D = -250A
V GS(th), NORMALIZED
1
-6
0.9
-4
0.8
-2
0.7
0 -1 -2 -3 -4 -5 V GS , GATE TO SOURCE VOLTAGE (V)
0.6 -50
-25
0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C)
125
150
Figure 16. P-Channel Transfer Characteristics.
Figure 17. P-Channel Gate Threshold Variation with Temperature.
NDH8521C Rev.C
Typical Electrical Characteristics: P-Channel (continued)
10
1.1 DRAIN-SOURCE BREAKDOWN VOLTAGE 1.08 1.06 1.04 1.02 1 0.98 0.96 0.94 -50
-I , REVERSE DRAIN CURRENT (A)
I D = -250A
3 1 0.5 0.1
VGS = 0V T J = 125C 25C
BV DSS , NORMALIZED
0.01
-55C
0.001
-25
0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C)
125
150
S
0.0001 0.2
0.4 -V
SD
0.6
0.8
1
1.2
, BODY DIODE FORWARD VOLTAGE (V)
Figure 18. P-Channel Breakdown Voltage Variation with Temperature.
Figure 19. P-Channel Body Diode Forward Voltage Variation with Current and Temperature.
1500 1000 -V GS , GATE-SOURCE VOLTAGE (V)
10
V I
8
D
= -2.7A
DS
=-5V -10V -15V
600 CAPACITANCE (pF) 400
Ciss Coss
6
200
4
Crss
100
f = 1 MHz V GS = 0 V
2
50 0 .1
0 .2
0.5
1
2
5
10
20
30
0 0 4 8 12 16 20 Q g , GATE CHARGE (nC)
-V , DRAIN TO SOURCE VOLTAGE (V) DS
Figure 20. P-Channel Capacitance Characteristics.
Figure 21. P-Channel Gate Charge Characteristics.
g FS , TRANSCONDUCTANCE (SIEMENS)
12
V DS = -5V T J = -55C
9
25C 125C
6
3
0
0
-3
-6 -9 I D , DRAIN CURRENT (A)
-12
-15
Figure 22. P-Channel Transconductance Variation with Drain Current and Temperature.
NDH8521C Rev.C
Typical Thermal Characteristics: N & P-Channel
20 10 5
R ( DS ) ON LIM
10
IT
1m
10 10 ms s
0u
15 10
s
-I , DRAIN CURRENT (A)
s
5 2 1 0.5
S RD
(O
N)
LIM
IT
1m 10 ms
s
I D , DRAIN CURRENT (A)
2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.1
10
0m
0m
s
1s 10 s
1s 10 s DC
V
SINGLE PULSE R J A = See Note 1 T A = 25C
0.2 0.5 1 2 5 10 V , DRAIN-SOURCE VOLTAGE (V)
DS
D
GS
= 10V
DC
0.1 0.05
V GS = -10V SINGLE PULSE R
A
J A
= See Note 1
A
T
= 25C
0.5 -V
DS
20
30
50
0.01 0.1
0.2
1
2
5
10
20
30
50
, DRAIN-SOURCE VOLTAGE (V)
Figure 23. N-Channel Maximum Safe Operating Area.
Figure 24. P-Channel Maximum Safe Operating Area.
1
TRANSIENT THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE
D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse
0.1
R JA (t) = r(t) * R JA R JA = See Note 1
P(pk)
0.01
t1
t2
TJ - TA = P * R
(t) JA Duty Cycle, D = t 1 / t 2
100 300
0.001 0.0001
0.001
0.01
0.1 t 1 , TIME (sec)
1
10
Figure 25. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note1. Transient thermal response will change depending on the circuit board design.
VDD V IN
D
t on
t off tr
90%
RL V OUT
t d(on)
t d(off)
90%
tf
VGS
VOUT
R GEN
10% G DUT
10% 90%
S
V IN
10%
50%
50%
PULSE WIDTH
Figure 26. N or P-Channel Switching Test Circuit.
Figure 27. N or P-Channel Switching Waveforms.
NDH8521C Rev.C

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