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Cascadable Silicon Bipolar MMIC Amplifiers Technical Data
MSA-0370
Features
* Cascadable 50 Gain Block * 3 dB Bandwidth: DC to 2.8 GHz * 12.0 dB Typical Gain at 1.0 GHz * 10.0 dBm Typical P1 dB at 1.0 GHz * Unconditionally Stable (k>1) * Hermetic Gold-ceramic Microstrip Package
Description
The MSA-0370 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to
70 mil Package
achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
Typical Biasing Configuration
R bias VCC > 7 V
RFC (Optional) 4 C block 3 IN 1
MSA
C block OUT Vd = 5 V
2
5965-9569E
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MSA-0370 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 80 mA 425 mW +13 dBm 200C -65 to 200C Thermal Resistance[2,4]: jc = 125C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 8 mW/C for TC > 147C. 4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information.
Electrical Specifications[1], TA = 25C
Symbol
GP GP f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT
Parameters and Test Conditions: Id = 35 mA, ZO = 50
Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to 3.0 GHz f = 0.1 to 3.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 0.1 GHz f = 0.1 to 1.8 GHz
Units
dB dB GHz
Min.
11.5
Typ.
12.5 0.6 2.8 1.8:1 1.8:1
Max.
13.5 1.0
dB dBm dBm psec V mV/C 4.5
6.0 10.0 23.0 125 5.0 -8.0 5.5
Notes: 1. The recommended operating current range for this device is 20 to 50 mA. Typical performance as a function of current is on the following page.
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MSA-0370 Typical Scattering Parameters (ZO = 50 , TA = 25C, Id = 35 mA)
Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang
0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0
.13 .13 .12 .11 .11 .10 .11 .16 .22 .28 .33 .36 .38 .39
-179 -180 -180 -178 -174 -168 -149 -147 -151 -160 -169 -177 163 132
12.6 12.6 12.5 12.4 12.3 12.2 11.7 11.1 10.3 9.3 8.2 7.1 5.1 3.4
4.27 4.25 4.21 4.17 4.11 4.06 3.85 3.57 3.27 2.91 2.58 2.27 1.81 1.48
176 171 162 154 146 137 116 96 82 65 48 34 9 -14
-18.6 -18.3 -18.4 -18.2 -17.8 -17.7 -17.1 -16.2 -15.6 -15.2 -14.5 -14.3 -13.8 -13.5
.118 .121 .121 .123 .129 .130 .140 .155 .167 .174 .188 .192 .203 .213
2 2 4 6 8 8 11 11 14 11 7 3 -5 -13
.09 .10 .12 .14 .17 .20 .24 .27 .27 .27 .26 .25 .23 .24
-14 -29 -52 -70 -82 -92 -114 -134 -146 -159 -163 -162 -153 -160
A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25C
(unless otherwise noted)
14 12 Gain Flat to DC 10
G p (dB)
60 TC = +125C 50 TC = +25C TC = -55C 40 30 20 10 0 0.1 0.3 0.5 1.0 3.0 6.0 0 1 2 3 Vd (V) 4 5 6 FREQUENCY (GHz)
G p (dB) I d (mA)
14
12
8 6 4 2 0
10
8 0.1 GHz 0.5 GHz 1.0 GHz 2.0 GHz 15 20 25 30 I d (mA) 35 40 50
6
4
Figure 1. Typical Power Gain vs. Frequency, TA = 25C, Id = 35 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
G p (dB)
13 12 11 GP
18 15 11
P1 dB (dBm) P1 dB (dBm)
7.0
6.5 12 9 I d = 35 mA 6 5.5 3 I d = 20 mA 0 0.1 0.2 0.3 5.0 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 I d = 20 mA I d = 35 mA I d = 50 mA 1.0 2.0 I d = 50 mA
NF (dB)
10 P1 dB 9 8 7
NF (dB)
6.0
6 NF 5 4 -55 -25 +25 +85 +125
TEMPERATURE (C)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Mounting Surface Temperature, f = 1.0 GHz, Id = 35 mA.
Figure 5. Output Power at 1 dB Gain Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
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70 mil Package Dimensions
.040 1.02 4 GROUND .020 .508 RF INPUT 1 RF OUTPUT AND BIAS 3
2
GROUND
Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13
.004 .002 .10 .05
.070 1.70
.495 .030 12.57 .76
.035 .89
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