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PD- 94055A
SMPS MOSFET
Applications High frequency DC-DC converters
IRF7478
HEXFET(R) Power MOSFET RDS(on) max (m) )
26@VGS = 10V 30@VGS = 4.5V
l
VDSS
60V
ID
4.2A 3.5A
Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
S S S G
1
8
A A D D D D
2
7
3
6
4
5
T o p V ie w
SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
7.0 5.6 56 2.5 0.02 20 3.7 -55 to + 150 300 (1.6mm from case )
Units
A W W/C V V/ns C
Thermal Resistance
Symbol
RJL RJA
Parameter
Junction-to-Drain Lead Junction-to-Ambient
Typ.
--- ---
Max.
20 50
Units
C/W
Notes through are on page 8
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3/13/01
IRF7478
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 60 --- --- --- 1.0 --- --- --- --- Typ. --- 0.065 20 23 --- --- --- --- --- Max. Units Conditions --- V V GS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 26 VGS = 10V, ID = 4.2A m 30 VGS = 4.5V, ID = 3.5A 3.0 V VDS = VGS, ID = 250A 20 VDS = 48V, VGS = 0V A 100 VDS = 48V, VGS = 0V, TJ = 125C 100 VGS = 20V nA -100 VGS = -20V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 17 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 21 4.3 9.6 7.7 2.6 44 13 1740 300 37 1590 220 410 Max. Units Conditions --- S VDS = 50V, ID = 4.2A 31 ID = 4.2A --- nC VDS = 48V --- VGS = 4.5V --- VDD = 30V --- ID = 4.2A ns --- RG = 6.2 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 48V, = 1.0MHz --- VGS = 0V, VDS = 0V to 48V
Symbol
EAS IAR
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
--- ---
Max.
140 4.2
Units
mJ A
Diode Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 52 100 2.3 A 56 1.3 78 150 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 4.2A, VGS = 0V TJ = 25C, I F = 4.2A di/dt = 100A/s
D
S
2
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IRF7478
100
VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP
10
10
2.7V
2.7V
20s PULSE WIDTH TJ = 25 C
1 10 100
1 0.1
1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
T J = 150C
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 7.0A
ID , Drain-to-Source Current ( )
2.0
1.5
10
T J = 25C
1.0
0.5
1 2.5 3.0
VDS = 25V 20s PULSE WIDTH
3.5 4.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7478
100000 VGS = 0V, f = 1 MHZ Ciss = C + C , C gs gd ds SHORTED Crss = C gd Coss = C + C ds gd 10
ID = 4.2A VDS = 48V VDS = 30V VDS = 12V
VGS , Gate-to-Source Voltage (V)
8
10000
C, Capacitance(pF)
Ciss
1000
6
Coss
100
4
Crss
2
10 1 10 100
0 0 10 20 30 40
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED BY RDS(on)
ISD , Reverse Drain Current (A)
TJ = 150 C
10
I D , Drain Current (A)
100 10us 10 100us 1ms 1 10ms
1
TJ = 25 C
0.1 0.2
V GS = 0 V
0.6 1.0 1.4 1.8 2.2
0.1 1
TA = 25 C TJ = 150 C Single Pulse
10 100 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7478
8.0
VDS VGS
RD
I D , Drain Current (A)
6.0
D.U.T.
+
RG
-VDD
4.0
10V
Pulse Width 1 s Duty Factor 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
VDS 90%
0.0 25 50 75 100 125 150
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Ambient Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100
0.1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7478
R DS (on) , Drain-to-Source On Resistance ( )
0.028 0.026
R DS(on) , Drain-to -Source On Resistance ( )
0.04
0.024 0.022 0.020 0.018
0.03
VGS = 4.5V
0.02
ID = 7.0A
VGS = 10V 0.016 0 10 20 30 40 50 60 ID , Drain Current (A)
0.01 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance Vs. Gate Voltage
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
400
EAS , Single Pulse Avalanche Energy (mJ)
VG
VGS
3mA
TOP BOTTOM
300
Charge
IG ID
ID 1.9A 3.4A 4.2A
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit and Waveform
200
15 V
100
V (B R )D S S tp VD S L DRIVE R
RG 20V IAS tp
D .U .T IA S 0.01
+ V - DD
0 25 50 75 100 125 150
A
Starting TJ , Junction Temperature ( C)
Fig 15a&b. Unclamped Inductive Test circuit and Waveforms
Fig 15c. Maximum Avalanche Energy Vs. Drain Current
6
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IRF7478
SO-8 Package Details
D -B-
D IM
5
IN C H E S M IN .05 32 .00 40 .01 4 .00 75 .18 9 .15 0 M AX .06 88 .00 98 .01 8 .009 8 .196 .15 7
M ILLIM E T E R S M IN 1.3 5 0.1 0 0.3 6 0.19 4.80 3.8 1 M AX 1.75 0.25 0.46 0.25 4.98 3.99
A
6 5 H 0 .2 5 (.0 1 0 ) M AM
5
8 E -A-
7
A1 B C D E e e1 H K
0 .1 0 (.0 0 4 ) L 8X 6 C 8X
1
2
3
4
e 6X
e1 A
K x 4 5
.05 0 B A S IC .02 5 B A S IC .22 84 .01 1 0.16 0 .244 0 .01 9 .05 0 8
1.27 B A S IC 0 .635 B A S IC 5.8 0 0.2 8 0.4 1 0 6.20 0.48 1.27 8
-C B 8X 0 .2 5 (.0 1 0 ) A1 M CASBS
L
R E C O M M E N D E D F O O T P R IN T 0 .7 2 (.0 2 8 ) 8X
NOTES: 1 . D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 . 2 . C O N T R O L L IN G D IM E N S IO N : IN C H . 3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S -0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 (.0 0 6 ). 6 D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E ..
6 .4 6 ( .2 5 5 )
1 .7 8 (.0 7 0 ) 8X
1 .2 7 ( .0 5 0 ) 3X
SO-8 Part Marking
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IRF7478
SO-8 Tape and Reel
TER M IN AL N UM B ER 1
1 2.3 ( .484 ) 1 1.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
F EE D D IRE C TIO N
N OT E S : 1 . CO NT RO L L ING DIM E NSIO N : M IL L IM E T E R . 2 . AL L DIM E NS ION S ARE SHO W N IN M ILL IM E TER S (INC HE S ). 3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 .
33 0.00 (12.992) M AX .
14.4 0 ( .566 ) 12.4 0 ( .488 ) N O T ES : 1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER . 2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board Coss eff. is a fixed capacitance that gives the same charging time ISD 4.2A, di/dt 160A/s, VDD V(BR)DSS,
TJ 150C as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25C, L = 16mH
RG = 25, IAS = 4.2A. Pulse width 400s; duty cycle 2%.
Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.3/01
8
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