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| IPD12N03L IPU12N03L OptiMOS(R) Buck converter series Feature *N-Channel Product Summary VDS RDS(on) ID P- TO251 -3-1 30 10.4 30 P- TO252 -3-11 V m A *Logic Level *Low On-Resistance RDS(on) *Excellent Gate Charge x R DS(on) product (FOM) *Superior thermal resistance *175C operating temperature *Avalanche rated *dv/dt rated *Ideal for fast switching buck converters Type IPD12N03L IPU12N03L Package P- TO252 -3-11 P- TO251 -3-1 Ordering Code Q67040-S4342 Q67042-S4043 Marking 12N03L 12N03L Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current1) TC=25C Symbol ID Value Unit A 30 30 Pulsed drain current TC=25C ID puls 120 Avalanche energy, single pulse ID=30A, V DD=25V, RGS=25 EAS 150 mJ Repetitive avalanche energy, limited by Tjmax 2) Reverse diode dv/dt IS=30A, VDS=24V, di/dt=200A/s, Tjmax=175C EAR dv/dt 10 6 kV/s Gate source voltage Power dissipation TC=25C VGS Ptot 20 100 V W Operating and storage temperature IEC climatic category; DIN IEC 68-1 Tj , Tstg -55... +175 55/175/56 C Page 1 2003-01-17 IPD12N03L IPU12N03L Thermal Characteristics Parameter Symbol min. Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Values typ. max. Unit RthJC RthJA RthJA - 1 - 1.5 100 K/W - - 75 50 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS=0V, I D=1mA Values typ. max. Unit V(BR)DSS 30 - - V Gate threshold voltage, V GS = VDS ID=50A VGS(th) 1.2 1.6 2 Zero gate voltage drain current VDS=30V, V GS=0V, T j=25C VDS=30V, V GS=0V, T j=125C IDSS IGSS 0.01 10 1 1 100 100 A Gate-source leakage current VGS=20V, VDS=0V nA Drain-source on-state resistance VGS=4.5V, ID=30A RDS(on) - 11.5 14.7 m Drain-source on-state resistance VGS=10V, ID=30A RDS(on) - 8.1 10.4 1Current limited by bondwire ; with an RthJC = 1.5K/W the chip is able to carry I D= 79A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-01-17 IPD12N03L IPU12N03L Electrical Characteristics Parameter Symbol Conditions min. Dynamic Characteristics Transconductance gfs VDS2*ID*RDS(on)max , ID=30A Values typ. max. Unit 23.8 47.5 - S Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Ciss Coss Crss RG t d(on) tr t d(off) tf VGS=0V, VDS =25V, f=1MHz - 1160 450 120 1.2 6.1 13 29.4 17.3 1550 605 175 9.2 20 44.1 26 pF ns VDD=15V, VGS=10V, ID=15A, RG =5.6 - Q gs Q gd Qg VDD=15V, ID=15A - 3 10.3 18.2 3.8 12.9 22.8 nC VDD=15V, ID=15A, VGS=0 to 5V - Output charge Q oss VDS=15V, ID =15A, VGS=0V - 16.5 20.6 nC Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge V(plateau) VDD=15V, ID=15A - 2.7 - V IS TC=25C - - 30 A ISM VSD trr Qrr VGS =0V, IF =30A VR =-V, IF =lS , diF /dt=100A/s - 0.9 31 29 120 1.2 39 37 V ns nC Page 3 2003-01-17 IPD12N03L IPU12N03L 1 Power dissipation Ptot = f (TC) 2 Drain current ID = f (TC) parameter: VGS 10 V 110 IPD12N03L 32 IPD12N03L W 90 80 A 24 P tot ID 20 40 60 80 100 120 140 160 C 190 70 60 20 16 50 40 30 20 4 10 0 0 0 0 20 40 60 80 100 120 140 160 C 190 12 8 TC TC 4 Max. transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 1 IPD12N03L 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , T C = 25 C 10 3 IPD12N03L K/W A 10 0 /I D tp = 10.0s ID V DS 10 2 ZthJC 100 s 10 -1 R DS (on ) = D = 0.50 10 10 1 1 ms -2 0.20 0.10 0.05 single pulse 10 ms 10 -3 0.02 0.01 DC 10 0 -1 10 10 0 10 1 V 10 2 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2003-01-17 IPD12N03L IPU12N03L 5 Typ. output characteristic ID = f (VDS); Tj=25C parameter: t p = 80 s 75 IPD12N03L Ptot = 100W 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS 32 IPD12N03L A m fe d VGS [V] a 3.0 b c 3.5 4.0 4.5 5.0 5.5 b c 60 55 c ID 50 45 40 35 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 d e f RDS(on) 24 20 16 d e 12 b 8 4 VGS [V] = b 3.5 c 4.0 d 4.5 e f 5.0 5.5 f a 4 V 5 0 0 10 20 30 40 A 60 VDS 7 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x R DS(on)max parameter: t p = 80 s 60 ID 8 Typ. forward transconductance gfs = f(ID); Tj=25C parameter: gfs 60 A 50 45 S 50 45 35 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 gfs V5 VGS Page 5 ID 40 40 35 30 25 20 15 10 5 0 0 10 20 30 40 A ID 60 2003-01-17 IPD12N03L IPU12N03L 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 30 A, V GS = 10 V 26 IPD12N03L 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS 2.5 m 22 20 V V GS(th) 0,4mA RDS(on) 18 16 14 12 10 8 6 4 2 0 -60 -20 20 60 100 140 C 1.5 98% 50A 1 typ 0.5 200 0 -60 -20 20 60 100 C Tj 180 Tj 11 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 10 4 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 s 10 3 IPD12N03L A pF Ciss C 10 3 10 2 Coss 10 1 Tj = 25 C typ Tj = 175 C typ Crss 10 2 0 10 0 0 IF Tj = 25 C (98%) Tj = 175 C (98%) 5 10 15 20 V VDS 30 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2003-01-17 IPD12N03L IPU12N03L 13 Typ. avalanche energy EAS = f (Tj) par.: I D = 30 A, V DD = 25 V, RGS = 25 160 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: I D=10 mA 36 IPD12N03L mJ V 120 V(BR)DSS 34 33 32 E AS 100 80 31 60 30 40 29 28 27 -60 20 0 25 45 65 85 105 125 145 C 185 Tj -20 20 60 100 140 C 200 Tj 14 Typ. gate charge VGS = f (Q Gate) parameter: I D = 15 A pulsed 16 V IPD12N03L 12 VGS 10 8 6 0.2 VDS max 0.5 VDS max 4 2 0.8 VDS max 0 0 10 20 30 40 nC 55 Q Gate Page 7 2003-01-17 IPD12N03L IPU12N03L Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2003-01-17 |
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