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| 2SC4381/4382 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1667/1668) sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg (Ta=25C) Unit V V V A A W C C Application : TV Vertical Output, Audio Output Driver and General Purpose (Ta=25C) sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions External Dimensions FM20(TO220F) 4.00.2 10.10.2 4.20.2 2.8 c0.5 2SC4381 2SC4382 150 150 6 2 1 25(Tc=25C) 150 -55 to +150 200 200 2SC4381 2SC4382 10max Unit A V VEB=6V IC=25mA VCE=10V, IC=0.7A IC=0.7A, IB=0.07A VCE=12V, IE=-0.2A VCB=10V, f=1MHz 10max 150min 200min 60min 1.0max 15typ 35typ A V V 16.90.3 8.40.2 VCB= 150 200 13.0min MHz pF 1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 20 RL () 20 IC (A) 1 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) 100 IB2 (mA) -100 ton (s) 1.0typ tstg (s) 3.0typ tf (s) 1.5typ 2.54 3.9 BCE IC - VCE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t)( V ) 2 50 m A VCE( sat ) - IB Characteristics (Typical) 3 I C - V BE Temperature Characteristics (Typical) 2 (VCE=10V) 1.6 Collector Current I C (A) 2 1.2 Collector Current I C( A) Temp e Temp) 25C (Cas 0.8 IB=5mA/Step 0.4 IC = 0 .5 A 1A 100 2A 0 0 0 2 4 6 8 10 0 2 10 1000 0 0.5 Base-Emittor Voltage V B E( V) -55C (Cas 1 125C (Case e Temp) 1 ) 0.2 0.80.2 a b o3.30.2 Weight : Approx 2.0g a. Type No. b. Lot No. 1.0 Collector-Emitter Voltage V C E( V) Base Current I B( mA) (V C E= 10V) 400 DC Cur rent Gain h F E DC Cur rent Gain h F E 400 (VCE=10V) j - a( C/W) Transient Thermal Resistance hFE - IC Characteristics (Typical) h FE - I C Temperature Characteristics (Typical) j-a - t Characteristics 6 125 C 2 5 C Typ 100 100 - 3 0 C 1 50 30 0.01 50 30 0.01 0.1 Collector Current I C( A) 1 2 0.1 Collector Current I C (A) 1 2 0.5 1 10 Time t(ms) 100 1000 fT - IE Characteristics (Typical) 30 (VCE=12V) 5 Safe Operating Area (Single Pulse) 30 1m 5m 20 ms P c - T a Derating s C Collecto r Curr ent I C( A) 1 M aximum Power Dissip ation P C( W) D Cut-o ff F requ ency f T( MH Z) s W 20 Typ 20 ith In fin ite he at si nk 10 0.1 Without Heatsink Natural Cooling 1.2SC4381 2.2SC4382 12 10 Without Heatsink 0 -0.01 0.01 -0.1 -0.5 -1 -2 1 10 Emitter Current I E( A) Collector-Emitter Voltage V C E( V) 100 300 0 0 50 100 150 Ambient Temperature Ta(C) 101 |
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