View 2SB1679_147680.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Transistors
2SB1679
Silicon PNP epitaxial planer type
Unit: mm
(0.425)
For low-frequency amplification I Features
* Large current capacitance * Low collector to emitter saturation voltage * Small type package, allowing downsizing and thinning of the equipment.
0.3+0.1 -0.0 3
0.15+0.10 -0.05
1.250.10
2.10.1 5
1
2
0.20.1
(0.65) (0.65) 1.30.1 2.00.2
I Absolute Maximum Ratings Ta = 25C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating -15 -10 -7 - 0.5 -1 150 150 -55 to +150 Unit V V V A A mW C C
10
0.90.1 0.9+0.2 -0.1
1: Base 2: Emitter 3: Collector EIAJ: SC-70 S-Mini Type Package (3-pin)
Marking Symbol: 3V
I Electrical Characteristics Ta = 25C 3C
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio *1 Collector to emitter saturation voltage *1 Base to emitter saturation voltage Transition frequency Collector output capacitance Note) *1: Pulse measurement *2: Rank classification Rank hFE1 R 130 to 220 S 180 to 350
*1
Symbol ICBO VCBO VCEO VEBO hFE1 *2 hFE2 VCE(sat) VBE(sat) fT Cob
Conditions VCB = -10 V, IE = 0 IC = -10 A, IE = 0 IC = -1 mA, IB = 0 IE = -10 A, IC = 0 VCE = -2 V, IC = - 0.5 A VCE = -2 V, IC = -1 A IC = - 0.4 A, IB = -8 mA IC = - 0.4 A, IB = -8 mA VCB = -10 V, IE = 50 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz
Min -15 -10 -7 130 60
Typ
0 to 0.1
Max -100
Unit nA V V V
350 - 0.16 - 0.8 130 22 - 0.3 -1.2
V V MHz pF
1

▲Up To Search▲

Price & Availability of 2SB1679

	To Download 2SB1679 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .