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VISHAY
SFH6135/ SFH6136
Vishay Semiconductors
High Speed Optocoupler, 1 MBd, Transistor Output
Features
* * * * * * * Isolation Test Voltage: 5300 VRMS TTL Compatible High Bit Rates: 1.0 Mbit/s High Common-mode Interference Immunity Bandwidth 2.0 MHz Open-collector Output External Base Wiring Possible
i179081
NC A C NC
1 2 3 4
8 7 6 5
C (VCC) B (VB) C (VO) E (GND)
Agency Approvals
* UL - File No. E52744 System Code H or J * CSA 93751 * DIN EN 60747-5-2(VDE0884) DIN EN 60747-5-5 pending Available with Option 1
Signals can be transmitted between two electrically separated circuits up to frequencies of 2.0 MHz. The potential difference between the circuits to be coupled should not exceed the maximum permissible reference voltages.
Description
The SFH6135 and SFH6136 optocouplers feature a high signal transmission rate and a high isolation resistance. They have a GaAIAs infrared emitting diode, optically coupled with an integrated photo detector which consists of a photo diode and a highspeed transistor in a DIP-8 plastic package.
Order Information
Part SFH6135 SFH6136 Remarks CTR 7.0 %, DIP-8 CTR 19 %, DIP-8
For additional information on the available options refer to Option Information.
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Reverse voltage Forward current Peak forward current Thermal resistance Power dissipation t = 1.0 ms, duty cycle 50 % Maximum surge forward current t 1.0 s, 300 pulses/s Test condition Symbol VR IF IFM IFSM Rthja Pdiss Value 3.0 25 50 1.0 700 45 Unit V mA mA A K/W mW
Document Number 83668 Rev. 1.4, 27-Apr-04
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SFH6135/ SFH6136
Vishay Semiconductors Output
Parameter Supply voltage Output voltage Emitter-base voltage Output current Maximum output current Base current Thermal resistance Power dissipation Tamb = 70 C Test condition Symbol VS VO VEBO IO IO IB Rthja Pdiss Value - 0.5 to 30 - 0.5 to 25 5.0 8.0 16 5.0 300 100
VISHAY
Unit V V V mA mA mA K/W mW
Coupler
Parameter Isolation test voltage Pollution degree (DIN VDE 0110) Creepage Clearance Comparative tracking index per DIN IEC 112/VDE 0303 part 1 Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature range Ambient temperature range Soldering temperature max. 10 s, dip soldering 0.5 mm distance from case bottom RIO RIO Tstg Tamb Tsld Test condition Symbol VISO Value 5300 2 7.0 7.0 175 1012 1011 - 55 to + 125 - 55 to + 100 260 C C C mm mm Unit VRMS
Electrical Characteristics
Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Forward voltage Breakdown voltage Reverse current Capacitance Temperature coefficient of forward voltage Test condition IF = 16 mA IR = 10 A VR = 3.0 V VR = 0 V, f = 1.0 MHz IF = 16 mA Symbol VF VBR IR CO VF/Tamb 3.0 0.5 125 1.7 10 Min Typ. 1.6 Max 1.9 Unit V V A pF mV/C
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Document Number 83668 Rev. 1.4, 27-Apr-04
VISHAY
Output
Parameter Logic low supply current Logic high supply current Output voltage, output low Test condition IF = 16 mA, VO open, VCC = 15 V IF = 0 mA, VO open, VCC = 15 V IF = 16 mA, VCC = 4.5 V, IO = 1.1 mA IF = 16 mA, VCC = 4.5 V, IO = 2.4 mA Output current, output high IF = 0 mA, VO = VCC = 5.5 V IF = 0 mA, VO = VCC = 15 V SFH6135 SFH6136 Part
SFH6135/ SFH6136
Vishay Semiconductors
Symbol ICCL ICCH VOL VOL IOH IOH
Min
Typ. 150 0.01 0.1 0.1 3.0 0.01
Max 1.0 0.4 0.4 500 1.0
Unit A A V V nA A
Coupler
Parameter Capacitance (input-output) Test condition f = 1.0 MHz Symbol CIO Min Typ. 0.6 Max Unit pF
Current Transfer Ratio
Parameter Current Transfer Ratio Test condition IF = 16 mA, VO = 0.4 V, VCC = 4.5 V IF = 16 mA, VO = 0.5 V, VCC = 4.5 V Part SFH6135 SFH6136 SFH6135 SFH6136 Symbol CTR CTR CTR CTR Min 7 19 5 15 Typ. 16 35 Max Unit % % % %
Pulse generator ZO = 50 tr,tf = 5 ns duty cycle 10% t100 s
1 IF 2
IF Monitor
IF
t
8 7 6 5
RL
5V
VO
5V 1.5 V t
3
100 i
VO CL 15 pF
VOL tPHL
4
tPLH
isfh6135_01
Fig. 1 Schematics
Document Number 83668 Rev. 1.4, 27-Apr-04
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SFH6135/ SFH6136
Vishay Semiconductors Switching Characteristics
Delay Time Parameter High-low Test condition IF = 16 mA, VCC = 5.0 V, RL = 4.1 k IF = 16 mA, VCC = 5.0 V, RL = 1.9 k Low-high IF = 16 mA, VCC = 5.0 V, RL = 4.1 k IF = 16 mA, VCC = 5.0 V, RL = 1.9 k Part SFH6135 SFH6136 SFH6135 SFH6136 Symbol tPHL tPHL tPLH tPLH Min Typ. 0.3 0.2 0.3 0.2 Max 1.5 0.8 1.5 0.8
VISHAY
Unit s s s s
VCM 10 V IF 1 2 3 4 8 7 6 5 RL VO VO 5V A: IF = 0 mA +VCM Pulse generator 5V 0V 10% tr tf 90% t 90% 10%
A B VFF
ZO = 50 tr,tf = 8 ns
VO
t
VOL
B: IF = 16 mA t
isfh6135_02
Fig. 2 Common-Mode Interference Immunity
Common Mode Transient Immunity
Parameter High Test condition VCM = 10 VP-P, VCC = 5.0 V, IF = 0 mA, RL = 4.1 k VCM= 10 VP-P, VCC = 5.0 V, IF = 0 mA, RL = 1.9 k Low VCM = 10 VP-P, VCC = 5.0 V, IF = 0 mA, RL = 4.1 k VCM = 10 VP-P, VCC = 5.0 V, IF = 0 mA, RL = 1.9 k Part SFH6135 SFH6136 SFH6135 SFH6136 Symbol CMH CMH CML CML Min Typ. 1000 1000 1000 1000 Max Unit V/s V/s V/s V/s
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Document Number 83668 Rev. 1.4, 27-Apr-04
VISHAY
SFH6135/ SFH6136
Vishay Semiconductors
Typical Characteristics (Tamb = 25 C unless otherwise specified)
20
IF - LED Current in mA
25 ( VCC = 5.0 V)
IF=40mA IF=35mA IF=30mA IF=25mA IF=20mA IF=15mA
15 75 C 10 25 C
Output Current, Io(mA)
20 15 10 5 0
0 C
5
IF=10mA IF=5mA
0 1.3
isfh6135_03
1.4
1.5
1.6
1.7
isfh6135_06
0
5
VF - LED forward Voltage
10 15 Output Voltage, Vo (V)
20
25
Fig. 3 LED Forward Current vs.Forward Voltage
Fig. 6 Output Current vs. Output Voltage
30
IF LED Current in ma Output Current, Io (mA)
8 7 6 5 4 3 2 1
@ VO = 0.4 V, VCC = 5.0 IF = 20mA IF = 16mA IF = 10mA
20
IF = 2mA
10
IF = 1mA
0
0
20
40
60
80
100
isfh6135_07
0 -60 -40 -20 0 20 40 60 Temperature, Ta (C) 80 100
Ambient Temperature in C
isfh6135_04
Fig. 4 Permissible Forward LED Current vs. Temperature
Fig. 7 Output Current vs. Temperature
tp - Propagation Delay Time - ns
120
Total Power in mW
900 800 700 600 500 400 300 200 100 0 0 20 40 60 80 100
isfh6135_08
100 Detector 80 60 40 Emitter 20 0 Ambient Temperature in C
SFH6136 @ VCC = 5.0 V IF = 16 mA, RL = 1.9 k
TpLH @ 3 V
TpLH @ 1.5 V
TpHL @ 1.5 V TpHL @ 3 V
-60
-40
-20
0 20 40 60 Temperature, Ta (C)
80
100
isfh6135_05
Fig. 5 Permissible Power Dissipation vs. Temperature
Fig. 8 Propagation Delay vs. Temperature-SFH6136
Document Number 83668 Rev. 1.4, 27-Apr-04
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SFH6135/ SFH6136
Vishay Semiconductors
VISHAY
1400
tp - Propagation Delay Time - ns
1200 1000 800 600 400 200 0 -60
SFH1635 @ VCC = 5.0 V, IF = 16 mA, RL = 4.1 k
TpLH
TpHL
-40
-20
0 20 40 60 Temperature, Ta (C)
80
100
isfh6135_09
Fig. 9 Propagation Delay vs. Temperature-SFH6135
100
IOH - Collector Current, IC (nA)
10 1 0.1 0.01 VCC = VO = 15 V VCC = VO = 5 V
0.001 -60
isfh6135_10
-40
-20
0 20 40 60 Temperature, TA (C)
80
100
Fig. 10 Logic High Output Current vs.Temperature
0.6
iF/iO / Small Signal Current Transfer Ratio
(VCC = 5.0 V, RL = 100 )
0.5 0.4 0.3 0.2 0.1 0 0 5 10 IF / mA 15 20 25
isfh6135_11
Fig. 11 Small Signal Current Transfer Ratio vs. Quiescent Input Current
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Document Number 83668 Rev. 1.4, 27-Apr-04
VISHAY
Package Dimensions in Inches (mm)
pin one ID 4 .255 (6.48) .268 (6.81) 5 6 7 8 3 2 1
SFH6135/ SFH6136
Vishay Semiconductors
ISO Method A
.379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .031 (0.79) .130 (3.30) .150 (3.81) .050 (1.27) .018 (.46) .022 (.56)
i178006
.300 (7.62) typ.
.020 (.51 ) .035 (.89 ) .100 (2.54) typ.
10 3-9 .008 (.20) .012 (.30)
.230(5.84) .110 (2.79) .250(6.35) .130 (3.30)
Document Number 83668 Rev. 1.4, 27-Apr-04
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SFH6135/ SFH6136
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 83668 Rev. 1.4, 27-Apr-04

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