View PTF10139_129025.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PTF 10139 60 Watts, 860-960 MHz GOLDMOS (R) Field Effect Transistor
Description
The PTF 10139 is a GOLDMOS FET intended for amplifier applications to 860-960 MHz. This 60-watt device operates at 55% efficiency with 12.5 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. * Performance at 960 MHz, 28 Volts - Output Power = 60 Watts Min - Power Gain = 12.5 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability Back Side Common Source 100% Lot Traceability Available in Package 20256 as PTF 10138
* * * * * *
Typical Output Power & Efficiency vs. Input Power
70 Output Power 60 70 Drain Efficiency (%) X 60 Efficiency 50 40 80
Output Power (Watts)
50 40 30 20 10 0 0 1 2 3 4
A-1 234 561 199
101
e
39
Package 20251
VDD = 28 V IDQ = 500 mA f = 960 MHz
30 20 10
Input Power (Watts)
Also available in Package 20256
e
A-12
1013 3456 8
2700
RF Specifications (100% Tested)
Characteristic
Common Source Power Gain (VDD = 28 V, POUT = 60 W, IDQ = 500 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 500 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 60 W, IDQ = 500 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 60 W, IDQ = 500 mA, f = 960 MHz-- all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated.
Symbol
Gps P-1dB h Y
Min
11.5 60 50 --
Typ
12.5 -- 55 --
Max
-- -- -- 10:1
Units
dB Watts % --
e
1
PTF 10139
Electrical Characteristics
Characteristic
(100% Tested)
e
Conditions Symbol
V(BR)DSS IDSS IGSS VGS(th) gfs
Min
65 -- -- 3.0 --
Typ
-- -- -- -- 2.8
Max
-- 1.0 1 5.0 --
Units
Volts mA mA Volts Siemens
Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous Operating Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) TSTG RqJC
Symbol
VDS VGS ID TJ PD
Value
65 20 7 200 194 1.11 -65 to 150 0.9
Unit
Vdc Vdc Adc C Watts W/C C C/W
Typical Performance
Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency
Gain (dB) 13 80
Broadband Test Fixture Performance
90
14 60 50 40 Gain (dB)
14
Output Power & Efficiency
13 12
VDD = 28 V Gain
12 11 10 9 840
Output Power (W) 60 50 40 960
Gain
IDQ = 500 mA
70
11 10 9
VDD = 28 V IDQ = 500 mA POUT = 60 W
30
Efficiency (%)
-15 10 Return Loss (dB) -25 0 960
860
880
900
920
940
8 920
930
940
950
Frequency (MHz)
Frequency (MHz)
2
Return Loss
-5 20
Efficiency
Efficiency (%)
e
Power Gain vs. Output Power
14 75
PTF 10139
Output Power vs. Supply Voltage
Output Power (Watts)
IDQ = 500 mA
Power Gain (dB)
13 IDQ = 320 mA 12 IDQ = 225 mA 11
70 65 60 55 50
VDD = 28 V f = 960 MHz
IDQ = 500 mA f = 960 MHz
24 26 28 30 32
10 0 1 100
Output Power (Watts)
Supply Voltage (Volts)
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
-20 140 120
Capacitance vs. Supply Voltage
24 20
VDD = 28 V
-30
3rd Order
Cds & Cgs (pF)
IDQ = 500 mA f1 = 959.90 MHz f2 = 960.00 MHz
Cgs
VGS = 0 V f = 1 MHz
100 80 60 40 20
IMD (dBc)
-40
5th
Cds
12 8 4
-50
7th
-60 0 10 20 30 40 50 60 70
0 0 10 20 30
Crss
40
0
Output Power (Watts-PEP)
Supply Voltage (Volts)
Bias Voltage vs. Case Temperature
1.04 Gate-Source Voltage (V) 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 30 80 130 Case Temperature (C)
0.4 1.364 2.328 3.292 4.256 5.22
Voltage normalized to 1.0 V Series show current (A)
3
Crss (pF)
16
PTF 10139
Impedance Data
VDD = 28 V, POUT = 60 W, IDQ = 500 mA
e
Z0 = 10 W
0.4 5
Z Source
Z Load
0. 05
G
--->
E RA
S
TO R
TOW AR D GEN
Z Source
960 MHz
0.1
Frequency
MHz 850 860 900 920 960 R
Z Source W
jX 0.40 0.56 0.80 0.90 1.10 R 0.60 0.56 0.55 0.58 0.65
Z Load W
jX 0.74 0.72 0.95 1.10 1.30 2.35 2.20 1.80 1.80 1.80
- WAVELE NGT HS
0.0
0.1
0.2
0.3
0.4
TOW ARD LOAD NG THS
0.1
Typical Scattering Parameters
(VDS = 28 V, ID = 1.5 A)
f (MHz)
300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500
S11 Mag
0.941 0.949 0.958 0.968 0.975 0.973 0.974 0.982 0.985 0.981 0.979 0.986 0.984 0.986 0.992 0.990 0.983 0.984 0.993 0.991 0.986 0.982 0.990 0.991 0.986
S21 Ang
-175 -176 -178 -179 -179 180 179 178 177 177 176 175 175 174 173 173 172 171 171 171 170 169 169 169 168
S12 Ang
36.8 32.7 28.3 24.7 22.3 18.0 14.6 10.5 6.38 3.31 0.641 0.228 0.643 -0.107 -0.098 -0.827 -1.69 -2.59 -3.43 -3.76 -4.91 -4.94 -5.51 -5.77 -5.99
A
VE LE
S22 Ang
-82.1 -82.7 -83.6 -82.9 -83.4 -78.3 -71.0 -19.9 44.0 68.8 71.9 70.1 76.6 79.0 81.0 80.6 78.5 76.4 76.2 76.6 76.4 73.3 69.4 67.2 66.3
Mag
2.70 2.09 1.71 1.40 1.20 1.03 0.892 0.788 0.671 0.576 0.489 0.425 0.378 0.342 0.316 0.294 0.264 0.245 0.228 0.211 0.192 0.179 0.173 0.159 0.146
Mag
0.028 0.022 0.017 0.013 0.009 0.006 0.003 0.001 0.003 0.004 0.007 0.008 0.010 0.011 0.014 0.016 0.018 0.020 0.022 0.023 0.025 0.028 0.030 0.029 0.030
Mag
0.993 0.990 0.991 0.994 0.998 0.996 0.996 0.996 0.997 0.999 0.996 0.990 0.992 0.994 0.996 0.989 0.985 0.990 0.993 0.987 0.986 0.988 0.986 0.990 0.985
Ang
-175 -176 -178 -179 -179 -180 180 179 178 178 177 176 176 176 175 175 174 173 173 173 173 172 172 171 171
4
0.5
850 MHz
0. 4
D
Z Load
960 MHz 850 MHz
5 0.
0.3
0 .2
e
Test Circuit
PTF 10139
Test Circuit Schematic for f = 960 MHz D.U.T. PTF 10139 0.190 l 960 MHz 0.075 l 960 MHz 0.141 l 960 MHz 0.017 l 960 MHz 0.122 l 960 MHz 0.191 l 960 MHz 0.015 l 960 MHz 0.225 l 960 MHz Microstrip 50 W Microstrip 15.7 W Microstrip 5.2 W Microstrip 5.2 W Microstrip 8.3 W Microstrip 8.3 W Microstrip 50 W Microstrip 50 W C1, C8 C2, C3, C5, C9 C4 C6 C7 J1, J2 L1 R1, R2, R3 Circuit Board Capacitor, 3.0 pF 100 B 3r0 Capacitor, 36 pF 100 B 360 Capacitor, 2.0 pF 100 B 2r0 Capacitor, 0.1 mF, 50 V Digi-Key P4525-ND Capacitor, 100 mF, 50 V Digi-Key P5182-ND Connector, SMA, Female, Panel Mount Ericsson, #Rpm 513 412/53 4 Turns, 22 Awg, .120 I.D. Resistor, 220ohm, 1/4w Digi-key 220qbk-no .031" thick, er = 4.0, 2 Oz Copper, G200,Allied Signal
l1 l2 l3 l4 l4 l4 l5 l6
Assembly Diagram (not to scale)
5
PTF 10139
e
10138_B INPUT
10138_A OUTPUT
Artwork (not to scale)
Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower
Specifications subject to change without notice. L3 (c) 1999, 2000 Ericsson Inc. EUS/KR 1522-PTF 10139 Uen Rev. A2 12-03-00
6

▲Up To Search▲

Price & Availability of PTF10139

	To Download PTF10139 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .