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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ16010/D
MJ16010
Designer'sTM Data Sheet
SWITCHMODE Series NPN Silicon Power Transistors
These transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line-operated switchmode applications. The MJ16012 and MJW16012 are selected high gain versions of the MJ16010 and MJW16010 for applications where drive current is limited. * * * * * * Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits * Fast Turn-Off Times -- TC = 100C 50 ns Inductive Fall Time (Typ) 90 ns Inductive Crossover Time (Typ) 800 ns Inductive Storage Time (Typ) * 100_C Performance Specified for: Reverse-Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents
MJW16010 MJ16012* MJW16012*
*Motorola Preferred Device
15 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 135 AND 175 WATTS
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MAXIMUM RATINGS
Rating Symbol VCEO VCEV VEB IC ICM IB IBM PD MJ16010 MJ16012 MJW16010 MJW16012 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage 450 850 6.0 15 20 10 15 Collector Current -- Continuous -- Peak (1) Base Current -- Continuous -- Peak (1) Total Device Dissipation @ TC = 25_C @ TC = 100_C Derate above 25_C Watts 1 75 100 1.0 135 53 8 1.11 W/_C Operating and Storage Junction Temperature Range TJ, Tstg - 65 to 200 - 55 to 150
CASE 1-07 TO-204AA (TO-3) MJ16010 MJ16012
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol RJC TL
Max
Unit
Thermal Resistance, Junction to Case Lead Temperature for Soldering Purposes, 1/8 from Case for 5 Seconds
1.0
0.93
_C/W _C
275
CASE 340F-03 TO-247AE MJW16010 MJW16012
(1) Pulse Test: Pulse Width
v 50 s, Duty Cycle w 10%
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. Preferred devices are Motorola recommended choices for future use and best overall value. Designer's and SWITCHMODE are trademarks of Motorola, Inc.
REV 2
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
1
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MJ16010 MJW16010 MJ16012 MJW16012
(1) Pulse Test: Pulse Width = 300 s, Duty Cycle
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
SWITCHING CHARACTERISTICS
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS (1)
SECOND BREAKDOWN
OFF CHARACTERISTICS
Inductive Load (Table 2)
Resistive Load (Table 1)
Crossover Time
Fall Time
Storage Time
Crossover Time
Fall Time
Storage Time
Fall Time
Storage Time
Fall Time
Storage Time
Rose Time
Delay Time
Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)
DC Current Gain (IC = 15 Adc, VCE = 5.0 Vdc)
Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 1.3 Adc) (IC = 10 Adc, IB = 1.3 Adc, TC = 100_C)
Collector-Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.7 Adc) (IC = 10 Adc, IB = 1.3 Adc) (IC = 10 Adc, IB = 1.3 Adc, TC = 100_C)
Clamped Inductive SOA with Base Reverse Biased
Second Breakdown Collector Current with Base Forward Biased
Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0)
Collector Cutoff Current (VCE = 850 Vdc, RBE = 50 , TC = 100_C)
Collector Cutoff Current (VCEV = 850 Vdc, VBE(off) = 1.5 Vdc) (VCEV = 850 Vdc, VBE(off) = 1.5 Vdc, TC = 100_C)
Collector-Emitter Sustaining Voltage (Table 2) (IC = 100 mA, IB = 0)
2
(IC = 10 Adc, IB1 = 1.3 Adc, VBE(off) = 5.0 Vdc, VCE(pk) = 400 Vdc) (IC = 10 Adc, VCC = 250 Vdc, IB1 = 1.3 Adc, PW = 30 s, Duty Cycle 2.0%) Characteristic
v
v 2.0%
(TC = 150_C) _C)
(TC = 100_C) _C)
(VBE(off) = 5.0 Vdc)
(IB2 = 2.6 Adc, RB2 = 1.6 )
VCEO(sus)
Motorola Bipolar Power Transistor Device Data
VCE(sat) VBE(sat) Symbol RBSOA IEBO ICER ICEV Cob hFE IS/b tsv tsv td tc tfi tfi tr tf tf tc ts ts Min 450 5.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 1050 1200 Typ 120 800 650 200 200 70 90 50 80 20 -- -- -- -- -- -- -- -- -- -- -- -- See Figure 16 See Figure 15 1800 0.25 1.5 Max 250 200 400 1.5 1.5 2.5 3.0 3.0 2.5 10 -- -- -- -- -- -- -- -- -- -- -- mAdc mAdc mAdc Unit Vdc Vdc Vdc pF ns ns --
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IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII I IIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I I I IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
(1) Pulse Test: Pulse Width = 300 s, Duty Cycle
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
SWITCHING CHARACTERISTICS
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS (1)
SECOND BREAKDOWN
OFF CHARACTERISTICS
Motorola Bipolar Power Transistor Device Data
Inductive Load (Table 2) Resistive Load (Table 1) Crossover Time Fall Time Storage Time Crossover Time Fall Time Storage Time Fall Time Storage Time Fall Time Storage Time Rose Time Delay Time Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz) DC Current Gain (IC = 15 Adc, VCE = 5.0 Vdc) Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 1.0 Adc) (IC = 10 Adc, IB = 1.0 Adc, TC = 100_C) Collector-Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.7 Adc) (IC = 10 Adc, IB = 1.0 Adc) (IC = 10 Adc, IB = 1.0 Adc, TC = 100_C) Clamped Inductive SOA with Base Reverse Biased Second Breakdown Collector Current with Base Forward Biased Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 850 Vdc, RBE = 50 , TC = 100_C) Collector Cutoff Current (VCEV = 850 Vdc, VBE(off) = 1.5 Vdc) (VCEV = 850 Vdc, VBE(off) = 1.5 Vdc. TC = 100_C) Collector-Emitter Sustaining Voltage (Table 2) (IC = 100 mA, IB = 0) (IC = 10 Adc, IB1 = 1.0 Adc, VBE(off) = 5.0 Vdc, VCE(pk) = 400 Vdc) (IC = 10 Adc, VCC = 250 Vdc, IB1 = 1.0 Adc, PW = 30 s, Duty Cycle 2.0%) Characteristic
v
v 2.0%
(TC = 150_C) _C)
(TC = 100_C) _C)
(VBE(off) = 5.0 Vdc)
(IB2 = 2.0 Adc, RB2 = 1.6 )
MJ16010 MJW16010 MJ16012 MJW16012
VCEO(sus)
VCE(sat)
VBE(sat)
Symbol
RBSOA
IEBO
ICER
ICEV
Cob
hFE
IS/b
tsv
tsv
td
tc
tfi
tc
tfi
ts
ts
tr
tf
tf
Min
450
7.0
--
--
--
--
--
--
--
--
--
--
--
--
--
-- --
-- -- --
--
--
-- --
Typ
850
650
500
150
900
200
See Figure 16
See Figure 15
70
30
50
30
40
20
--
--
-- --
-- -- --
--
--
-- --
--
1500
0.25 1.5
Max
200
150
400
1.5 1.5
2.5 3.0 3.0
2.5
10
--
--
--
--
--
--
--
--
--
--
--
mAdc
mAdc
mAdc
Unit
Vdc
Vdc
Vdc
pF
ns
ns
--
3
MJ16010 MJW16010 MJ16012 MJW16012
TYPICAL STATIC CHARACTERISTICS
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0
50 TC = 100C hFE , DC CURRENT GAIN 25C 20
1.0 0.7 0.5 0.3 IC = 1.0 A 0.2 5.0 A 10 A
15 A
10
5.0 VCE = 5.0 V 3.0 0.2 0.5 1.0 5.0 2.0 IC, COLLECTOR CURRENT (AMPS) 10 20
TC = 25C 0.1 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (AMPS) 5.0 10
Figure 1. DC Current Gain
Figure 2. Collector Saturation Region
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.15 0.2 0.3 f = 10 TC = 100C f = 10 TC = 25C f = 5.0 TC = 25C 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 15 VBE, BASE-EMITTER VOLTAGE (VOLTS)
1.5 1.0 0.7 75C 0.5 0.4 0.3 0.2 0.15 0.15 0.2 0.3
f = 10
TC = 25C 100C
0.5 0.7 1.0
2.0
3.0
5.0
7.0
10
15
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Voltage
104 IC, COLLECTOR CURRENT ( A) 103 TJ = 150C 102 101 100 10-1 - 0.4 125C 100C 75C REVERSE 25C 0 - 0.2 + 0.2 + 0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) + 0.6 FORWARD VCE = 250 V
10000 5000 3000 2000 1000 500 300 200 100 50 20 10 0.1 0.3 0.5 1.0 2.0 5.0 10 20 30 50 100 VR, REVERSE VOLTAGE (VOLTS) 300 500 850 Cob Cib
C, CAPACITANCE (pF)
TC = 25C
Figure 5. Collector Cutoff Region
Figure 6. Capacitance
4
Motorola Bipolar Power Transistor Device Data
MJ16010 MJW16010 MJ16012 MJW16012
5000 3000 2000 t sv, STORAGE TIME (ns) 1000 500 300 200 100 0.07 0.05 1.5 f* = 5.0 TC = 75C VCC = 20 V VBE(off) = 0 V t sv, STORAGE TIME (ns) 2.0 V 5.0 V 5000 3000 2000 1000 700 500 300 200 100 0.05 1.5 VBE(off) = 0 V 2.0 V 5.0 V
f* = 10 TC = 75C VCC = 20 V 2.0 3.0 5.0 7.0 10 15
2.0
3.0
5.0
7.0
10
15
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 7. Storage Time
Figure 8. Storage Time
1000 tfi, COLLECTOR CURRENT FALL TIME (ns) 500 300 200 100 50 f* = 5.0 TC = 75C VCC = 20 V 2.0 V 5.0 V VBE(off) = 0 V tfi, COLLECTOR CURRENT FALL TIME (ns)
1000 500 300 200 100 50 VBE(off) = 0 V
2.0 V f* = 10 TC = 75C VCC = 20 V 2.0 3.0 5.0
5.0 V
20 10 1.5
20 10 1.5
2.0
3.0
5.0
7.0
10
15
7.0
10
15
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Collector Current Fall Time
Figure 10. Collector Current Fall Time
1500 1000 t c , CROSSOVER TIME (ns) 500 300 200 100 50 f* = 5.0 TC = 75C VCC = 20 V t c , CROSSOVER TIME (ns) VBE(off) = 0 V
1500 1000 500 VBE(off) = 0 V 300 200 100 50 f* = 10 TC = 75C VCC = 20 V 2.0 3.0 5.0 2.0 V 5.0 V
5.0 V 2.0 V
20 15 1.5
2.0
3.0
5.0
7.0
10
15
20 15 1.5
7.0
10
15
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Crossover Time
I *f = C IB1
Figure 12. Crossover Time
Motorola Bipolar Power Transistor Device Data
5
MJ16010 MJW16010 MJ16012 MJW16012
GUARANTEED SAFE OPERATING AREA LIMITS
IC(pk) 90% VCE(pk) IC tsv trv tc VCE IB 90% IB1 10% VCE(pk) 10 VCE(pk) 90% IC(pk) tfi tti I B2 , REVERSE BASE CURRENT (AMPS) 9 8 7 6 5 4 3 2 1 0 0 1.0 A IC = 10 A TC = 25C 5.0 IB1 = 2.0 A
10% IC(pk) 2% IC
TIME
4.0 1.0 2.0 3.0 VBE(off), REVERSE BASE VOLTAGE (VOLTS)
Figure 13. Inductive Switching Measurements
Figure 14. Peak Reverse Base Current
SAFE OPERATING AREA INFORMATION
10 s MJ16010/12 MJW16010,12 dc TC = 25C 1.0 ms I C(pk) , PEAK COLLECTOR CURRENT (AMPS) 20 IC, COLLECTOR CURRENT (AMPS) 10 5.0 2.0 1.0 0.5 20 18
14
10
f* 4.0 TC 100C VBE(off) = 0 V 1.0 to 5.0 V
6.0
0.1 0.05 0.02 5.0
BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 10 20 30 50 70 100 200 300 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 450
2.0 0 100 150 600 700 850 200 250 350 450 VCE(pk), PEAK COLLECTOR-EMITTER VOLTAGE (VOLTS)
I *f = C IB1
Figure 15. Maximum Forward Bias Safe Operating Area
Figure 16. Maximum Reverse Bias Safe Operating Area
FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 15 may be found at any case temperature by using the appropriate curve on Figure 18. T J(pk) may be calculated from the data in Figure 17. At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base-to-emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage current condition allowable during reverse biased turnoff. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 16 gives the RBSOA characteristics.
6
Motorola Bipolar Power Transistor Device Data
MJ16010 MJW16010 MJ16012 MJW16012
1.0 r(t), TRANSIENT THERMAL RESPONSE (NORMALIZED) RJC(t) = r(t) RJC RJC = 1.0C/W or 1.11C/W TJ(pk) - TC = P(pk) RJC(t)
0.1
0.01 0.01
0.1
1.0 t, TIME (ms)
10
100
1K
Figure 17. Thermal Response
100 POWER DERATING FACTOR (%) SECOND BREAKDOWN DERATING 80
60 THERMAL DERATING
40
20
MJW16010, MJW16012 MJ16010, MJ16012 0 40 80 120 TC, CASE TEMPERATURE (C) 160 200
0
Figure 18. Power Derating Table 1. Resistive Load Switching td and tr
0V - 35 V H.P. 214 or EQUIV. P.G. RB = 10 50 *IC *IB T.U.T. RL VCC H.P. 214 or EQUIV. P.G. 5 0 + - 10 F 0.02 F 1.0 F 100 -V VCC = 250 Vdc RL = 25 IC = 10 Adc IB = 1.0 Adc 11 V 0V Vin tr 15 ns *Tektronix AM503 *P6302 or Equivalent +V 0V -5 V A 50 *IB T.U.T. *IC VCC IB1 = 1.0 Adc RB1 = 10 IB2 = 2.0 Adc RB2 = 1.6 For VBE(off) = 5.0 V, RB2 = 0 RL + Vdc 11 Vdc 100 2N6191 0.02 F RB1 A RB2 2N5337 500
ts and tf
20
VCC = 250 Vdc RL = 25 IC = 10 Adc
Note: Adjust - V to obtain desired VBE(off) at Point A.
Motorola Bipolar Power Transistor Device Data
7
MJ16010 MJW16010 MJ16012 MJW16012
Table 2. Inductive Load Switching
0.02 F H.P. 214 or EQUIV. P.G. 0V - 35 V 0.02 F 1.0 F +- 500 100 -V IC(pk) T1 0V -V A (ICpk [ LcoilCC ) V *IB Vclamp VCC IB Inductive Switching L = 200 H RB2 = 0 VCC = 20 V RB1 selected for desired IB1 Scope -- Tektronix 7403 or Equivalent RBSOA L = 200 H RB2 = 0 VCC = 20 V RB1 selected for desired IB1 IB2 IB1 T.U.T. MR856 t1 50 +V *IC L VCE VCE(pk) = VCE(clamp) IC VCE(pk) RB2 2N5337 + - 100 + V 11 V
2N6191 20 10 F RB1 A
50
T1 adjusted to obtain IC(pk) VCEO(sus) L = 10 mH RB2 = VCC = 20 V Its *Tektronix AM503 *P6302 or Equivalent
Note: Adjust - V to obtain desired VBE(off) at Point A.
TYPICAL INDUCTIVE SWITCHING WAVEFORMS
tsv
IC(pk) = 10 A IB1 = 1.0 A VBE(off) = 5.0 V VCE(pk) = 400 V TC = 25C Time Base = 0 100 ns/cm IC(pk) = 10 A IB1 = 1.0 A VBE(off) = 5.0 V VCE(pk) = 400 V TC = 25C Time Base = 20 ns/cm IC(pk)
tfi, tc
t fi = 20 ns VCE(pk)
VCE(pk)
I B1
VCE(sat) t sv = 370 ns I B2 VCE(sat) tc 24 ns
8
Motorola Bipolar Power Transistor Device Data
MJ16010 MJW16010 MJ16012 MJW16012
PACKAGE DIMENSIONS
A N C -T- E D U V
2 2 PL SEATING PLANE
K
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY.
0.13 (0.005) L G
1
TQ
M
Y
M
-Y-
H
B
-Q- 0.13 (0.005)
M
TY
M
DIM A B C D E G H K L N Q U V
INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188
MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77
STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR
CASE 1-07 TO-204AA (TO-3) ISSUE Z
0.25 (0.010)
M
-Q- TBM
-T- E -B- U C
4
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D E F G H J K L P Q R U V MILLIMETERS MIN MAX 20.40 20.90 15.44 15.95 4.70 5.21 1.09 1.30 1.50 1.63 1.80 2.18 5.45 BSC 2.56 2.87 0.48 0.68 15.57 16.08 7.26 7.50 3.10 3.38 3.50 3.70 3.30 3.80 5.30 BSC 3.05 3.40 INCHES MIN MAX 0.803 0.823 0.608 0.628 0.185 0.205 0.043 0.051 0.059 0.064 0.071 0.086 0.215 BSC 0.101 0.113 0.019 0.027 0.613 0.633 0.286 0.295 0.122 0.133 0.138 0.145 0.130 0.150 0.209 BSC 0.120 0.134
L
A
R
1 2 3
K
P
-Y-
F D 0.25 (0.010)
M
V G
H J
YQ
S
STYLE 3: PIN 1. 2. 3. 4.
BASE COLLECTOR EMITTER COLLECTOR
CASE 340F-03 TO-247AE ISSUE E
Motorola Bipolar Power Transistor Device Data
9
MJ16010 MJW16010 MJ16012 MJW16012
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com
JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
10
Motorola Bipolar Power Transistor Device Data
*MJ16010/D*
MJ16010/D

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