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| BAT 17W Silicon Schottky Diodes * For mixer applications in the VHF / UHF range * For high-speed switching applications 3 2 1 BAT 17W BAT 17-04W BAT 17-05W BAT 17-06W VSO05561 Type BAT 17W BAT 17-04W BAT 17-05W BAT 17-06W Marking Ordering Code 53s 54s 55s 56s Q62702-A1271 Q62702-A1272 Q62702-A1273 Q62702-A1274 Pin Configuration 1=A 1 = A1 1 = A1 3 = C1 2 n.c. 2 = C2 2 = A2 2 = C2 3=C 3 = C1/A2 3 = C1/2 3 = A1/2 Package SOT-323 Maximum Ratings Parameter Diode reverse voltage Forward current Symbol Value 4 130 150 150 150 - 55 ...+150 - 55 ...+150 435 550 355 390 C Unit V mA mW VR IF Total power dissipation 1) BAT 17W , T A 97 C Ptot BAT 17-04W, -05W, -06W , TS 92 C tot P Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient 1) BAT 17W Junction - ambient 1) BAS 17-04W ... Junction - soldering point BAT 17W Junction - soldering point BAT 17-04W ... Tj Top Tstg RthJA RthJA RthJS RthJS K/W 1) Package mounted on alumina 15mm x 17.6mm x 0.7mm) Semiconductor Group Semiconductor Group 11 Sep-04-1998 1998-11-01 BAT 17W Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage typ. max. - Unit V(BR) IR 4 V A I (BR) = 10 A Reverse current VR = 3 V VR = 4 V Reverse current - - 0.25 10 1.25 nA mV IR VF VR = 3 V, TA = 60 C Forward voltage I F = 0.1 mA I F = 1 mA I F = 10 mA AC characteristics Diode capacitance 200 250 350 275 340 425 350 450 600 CT rf 0.4 - 0.55 8 0.75 15 pF VR = 1 V, f = 1 MHz Differential forward resistance I F = 5 mA, f = 100 kHz Semiconductor Group Semiconductor Group 22 Sep-04-1998 1998-11-01 BAT 17W Forward current IF = f (V F) T A = parameter 10 2 mA Diode capacitance CT = f (VR) f = 1MHz 0.7 pF 10 1 TA = 25C TA = 85C TA = 125C 10 0 CT 0.5 IF 0.4 0.3 10 -1 0.2 10 -2 0.0 0.2 0.4 0.6 V 1.0 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 VF VR Leakage current I R = f (V R) T A = Parameter 10 2 uA 10 1 125C IR 10 0 85C 10 -1 10 -2 25C 10 -3 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 VR Semiconductor Group Semiconductor Group 33 Sep-04-1998 1998-11-01 |
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