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| BFG 135A NPN Silicon RF Transistor * For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 70mA to 130mA * Power amplifiers for DECT and PCN systems * Integrated emitter ballast resistor * fT = 6 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFG 135A BFG135A Q62702-F1322 1=E 2=B 3=E 4=C Package SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 15 25 25 2 150 20 mW 1000 150 - 65 ... + 150 - 65 ... + 150 50 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS 100 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-16-1996 BFG 135A Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 15 120 - V A 100 nA 50 A 1 80 250 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 25 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 100 mA, VCE = 8 V Semiconductor Group 2 Dec-16-1996 BFG 135A Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 4.5 6 1.3 0.8 7.5 - GHz pF 1.8 dB 2 3.7 - IC = 100 mA, VCE = 8 V, f = 200 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 30 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 2) Gma IC = 100 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 10 4 dBm 38 14 9 - IC = 100 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz Third order intercept point IP3 IC = 100 mA, VCE = 8 V, f = 900 MHz ZS =ZL= 50 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-16-1996 BFG 135A Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 1200 mW 1000 Ptot 900 800 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 C 150 TA ,TS TS TA Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 2 10 2 RthJS K/W Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 4 Dec-16-1996 BFG 135A Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 4.0 7.0 GHz pF 6.0 10V Ccb 3.0 fT 5.5 5.0 5V 3V 2V 2.5 4.5 4.0 2.0 3.5 3.0 1V 1.5 2.5 2.0 0.7V 1.0 1.5 0.5 0.0 0 4 8 12 16 V VR 22 1.0 0.5 0.0 0 20 40 60 80 100 120 140 mA 170 IC Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 16 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 11 dB 10V 5V 3V 2V dB G 12 G 9 8 7 10V 5V 3V 10 2V 6 8 1V 5 6 0.7V 4 3 2 2 1 0 0 20 40 60 80 100 120 140 mA 170 IC 0 0 20 40 60 80 100 120 140 mA 170 IC 0.7V 1V 4 Semiconductor Group 5 Dec-16-1996 BFG 135A Power Gain Gma, Gms = f(VCE):_____ |S21 |2 = f(VCE):--------- Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) f = Parameter 15 dB IC=100mA 13 0.9GHz VCE = Parameter, f = 900MHz 45 dBm 10V 8V G 12 11 10 9 8 7 0.9GHz 1.8GHz IP3 35 5V 30 3V 25 2V 6 5 4 3 2 1 0 0 2 4 6 8 V 12 15 10 0 20 1V 20 40 60 80 100 120 V CE mA IC 160 Power Gain Gma, Gms = f(f) VCE = Parameter 30 Power Gain |S21|2= f(f) VCE = Parameter 30 IC=100mA dB dB IC=100mA G S21 20 20 15 15 10 10 5 10V 2V 1V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 0.7 0 1V 2V 10V 5 0 0.0 -5 0.0 0.5 1.0 1.5 2.0 GHz f 3.0 Semiconductor Group 6 Dec-16-1996 |
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