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| DATA DATA PRELIMINARY SHEET SHEET Silicon Transistor 2SA1977 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES * PACKAGE DIMENSION (in millimeters) _ 2.8+0.2 0.4 +0.1 -0.05 High fT fT = 8.5 GHz TYP. High gain | S21e | = 12.0 dB TYP. @f = 1.0 GHz, VCE = -8 V, IC = -20 mA 2 1.5 0.65 +0.1 -0.15 * 0.95 * * Equivalent NPN transistor is the 2SC3583. _ 2.9+0.2 High-speed switching characterstics 2 0.95 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCB0 VCE0 VEB0 IC PT Tj Tstg Rating -20 -12 -3.0 -50 200 150 -65 to +150 Unit V V V mA mW C C 1.1 to 1.4 0.3 Marking 0.16 +0.1 -0.06 ELECTRICAL CHARACTERISTICS (TA = 25 C) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Collector Capacitance Insertion Power Gain Noise Figure Symbol ICB0 IEB0 hFE fT Cre* | S21e | NF 2 PIN CONNECTIONS 1: Emitter 2: Base 3: Collector Marking; T92 Test Conditions VCB = -10 V VEB = -1 V VCE = -8 V, IC = -20 mA VCE = -8 V, IC = -20 mA, f = 1 GHz VCB = -10 V, IE = 0, f = 1 MHz VCE = -8 V, IC = -20 mA, f = 1.0 GHz VCE = -8 V, IC = -3 mA, f = 1 GHz MIN. TYP. 0 to 0.1 MAX. -0.1 -0.1 0.4 +0.1 -0.05 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) 1 3 Unit A A 20 6.0 8.5 0.5 8.0 12.0 1.5 100 GHz 1 pF dB 3 dB * Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal. hFE Classification Rank Marking hFE FB T92 20 to 100 Document No. P10925EJ1V0DS00 (1st edition) Date Published April 1996 P Printed in Japan (c) 1996 2SA1977 SWITCHING CHARACTERISTICS Parameter Turn-on Delay Time Rise Time Turn off Delay Time Fall Time Symbol Vin = 1 V TYP. ton (delay) tr toff (delay) tf 1.08 0.66 0.32 0.78 ns ns ns ns Unit SWITCHING TIME MEASUREMENT CIRCUIT VCC ( - ) RC1 RL1 VOUT Vin RS Sampling Oscilloscope 50 VSS ( - ) VOUT RC2 RL2 ton (delay) tr Vin 20 ns toff (delay) tr RE VEE ( + ) Vin = 1 V, VBB = -0.5 V, RC1 = RC2 RS () 160 RC () 1k RL1 () 200 RL2 () 250 RE () 2.7 k VEE (V) 27 VCC (V) 26.3 2 2SA1977 TYPICAL CHARACTERISTICS TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 400 PT - Total Power Dissipation - mV 300 200 100 0 50 100 150 200 TA - Ambient Temperature - C 3 2SA1977 BASE TO EMITTER VOLTAGE vs. COLLECTOR CURRENT -10 VCE = -1 V VBE (ON) - DC Base Voltage - V -1.0 -0.1 -0.01 -0.1 -1.0 -10 IC - Collector Current - mA -100 -1000 COLLECTOR AND BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT -10 VCE(sat) - Collector Saturation Voltage - V VBE(sat) - Base Saturation Voltage - V IC = 10 * IB -1.0 VBE (S) VCE (S) -0.1 -0.01 -0.1 -1.0 -10 IC - Collector Current - mA -100 -1000 4 2SA1977 INSERTION GAIN vs. FREQUENCY 15 VCE = -8 V f = 1 GHz fT - Gain Bandwidth Product - GHz |S21e|2- Insertion Power Gain - dB GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 VCE = -8 V 8 10 6 4 5 2 0 -1 -10 IC - Collector Current - mA -100 0 -1 -10 IC - Collector Current - mA -100 OUTPUT CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 1.5 f = 1 MHz Cre - Collector Feed-back Capacitance - pF |S21e|2- Insertion Power Gain - dB INSERTION GAIN vs. FREQUENCY 35 30 25 20 15 10 5 0 -5 -10 VCE = -8 V IC = -20 mA 1 0.5 0 -1 -10 VCB - Collector to Base Voltage - V -100 -15 0.1 0.2 0.3 0.4 0.5 1.0 2.0 3.0 f - Frequency - GHz 5 2SA1977 DC CURRENT GAIN vs. COLLECTOR CURRENT 100 50 40 30 hFE - DC Current Gain 20 VCE = -3 V VCE = -2 V VCE = -1 V 10 1.0 -0.1 -1.0 -10 IC - Collector Current - mA -100 -1000 DC CURRENT GAIN vs. COLLECTOR CURRENT 100 VCE = -8 V 50 40 30 hFE - DC Current Gain 20 10 5 4 3 2 1 -0.1 -1.0 -10 IC - Collector Current - mA -100 -1000 6 2SA1977 S11 VCE = -8 V IC = -20 mA 3.0 GHZ 0.1 GHZ S22 VCE = -8 V IC = -20 mA 3.0 GHZ 0.1 GHZ 7 2SA1977 S-PARAMETER (VCE = 1 V, IC = 5 mA, Zo = 50 ) f MHz 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 MAG 0.553 0.460 0.427 0.393 0.377 0.367 0.362 0.363 0.364 0.365 0.369 0.375 0.376 0.384 0.391 0.399 0.405 0.411 0.418 0.423 0.429 0.438 0.444 0.450 0.457 S11 ANG - 43.7 - 78.2 - 104 - 123 - 138 - 149 - 159 - 168 - 175 178 172 166 162 157 153 149 146 142 139 135 132 130 127 124 122 MAG 11.03 8.780 7.003 5.700 4.74 4.053 3.549 3.151 2.847 2.603 2.391 2.219 2.070 1.940 1.838 1.744 1.659 1.584 1.520 1.461 1.408 1.361 1.316 1.276 1.239 S21 ANG 150. 129. 115. 105. 97.6 91.2 85.9 61.3 77.0 73.0 69.3 66.8 62.7 59.4 56.3 53.5 50.8 48.2 45.6 43.1 40.9 38.6 36.4 34.2 32.3 MAG 0.423 0.691 0.857 0.983 0.109 0.120 0.131 0.143 0.154 0.165 0.176 0.188 0.200 0.213 0.225 0.238 0.250 0.264 0.277 0.290 0.302 0.314 0.328 0.341 0.353 S12 ANG 71.2 59.4 54.4 52.7 52.2 52.5 52.9 53.1 53.8 54.0 54.4 54.2 54.4 54.1 53.8 53.4 52.9 52.3 51.7 51.1 50.2 49.4 48.5 47.6 46.5 MAG 0.666 0.696 0.556 0.461 0.392 0.341 0.307 0.280 0.258 0.241 0.227 0.217 0.207 0.200 0.192 0.188 0.184 0.184 0.182 0.181 0.180 0.182 0.181 0.187 0.188 S22 ANG - 25.0 - 42.2 - 52.9 - 59.5 - 64.2 - 67.4 - 70.5 - 73.7 - 76.1 - 78.8 - 82.0 - 84.8 - 88.4 - 92.0 - 94.9 - 99.1 - 102 - 107 - 111 - 115 - 119 - 125 - 128 - 132 - 137 8 2SA1977 S-PARAMETER (VCE = 3 V, IC = 5 mA, Zo = 50 ) f MHz 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 MAG 0.595 0.511 0.432 0.362 0.345 0.323 0.308 0.300 0.297 0.295 0.297 0.300 0.303 0.308 0.314 0.322 0.328 0.335 0.341 0.349 0.355 0.364 0.372 0.378 0.386 S11 ANG - 34.2 - 62.8 - 86.0 - 104 - 119 - 132 - 143 - 153 - 162 - 170 - 177 176 170 164 160 155 151 147 143 140 136 133 130 128 125 MAG 11.62 9.618 7.920 6.575 5.511 4.749 4.177 3.712 3.359 3.064 2.818 2.617 2.439 2.284 2.159 2.046 1.944 1.855 1.774 1.705 1.638 1.583 1.53 1.479 1.439 S21 ANG 154. 134. 120. 110. 102. 95.9 90.5 85.8 81.5 77.6 74.0 70.6 67.4 64.2 61.2 58.4 55.7 53.0 50.5 48.1 45.7 43.5 41.2 39.0 37.0 MAG 0.0328 0.0573 0.0734 0.0852 0.0964 0.106 0.116 0.126 0.137 0.147 0.158 0.169 0.181 0.192 0.203 0.215 0.227 0.240 0.252 0.264 0.276 0.289 0.302 0.314 0.326 S12 ANG 74.9 64.8 58.5 57.1 55.9 56.4 56.6 57.1 57.3 57.9 57.9 58.3 58.1 58.1 57.8 57.5 57.3 56.5 56.1 55.5 54.7 54.2 53.2 52.5 51.7 MAG 0.902 0.760 0.633 0.542 0.471 0.420 0.383 0.355 0.332 0.315 0.299 0.287 0.276 0.266 0.258 0.250 0.243 0.241 0.233 0.230 0.226 0.222 0.218 0.218 0.215 S22 ANG - 19.4 - 33.2 - 41.9 - 47.3 - 50.3 - 52.2 - 54.1 - 55.7 - 57.2 - 58.9 - 60.6 - 62.1 - 64.6 - 66.5 - 68.5 - 71.4 - 73.6 - 76.9 - 80.3 - 83.1 - 86.5 - 90.7 - 93.6 - 97.5 - 101. 9 2SA1977 S-PARAMETER (VCE = 8 V, IC = 5 mA, Zo = 50 ) f MHz 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 MAG 0.679 0.586 0.491 0.417 0.362 0.323 0.293 0.274 0.261 0.251 0.247 0.245 0.245 0.247 0.251 0.258 0.263 0.269 0.276 0.283 0.290 0.298 0.307 0.314 0.321 S11 ANG - 27.6 - 51.4 - 71.0 - 87.3 - 100 - 113 - 124 - 135 - 145 - 154 - 162 - 170 - 177 175 169 164 159 154 150 146 142 138 135 132 129 MAG 11.75 10.01 8.453 7.152 6.040 5.245 4.627 4.124 3.734 3.419 3.150 2.919 2.720 2.551 2.410 2.283 2.169 2.067 1.977 1.898 1.824 1.762 1.701 1.645 1.597 S21 ANG 156. 138. 124. 114. 106. 99.6 94.2 89.4 85.0 81.2 77.6 74.2 71.0 67.8 64.8 62.1 59.3 56.7 54.4 51.8 49.5 47.2 44.9 42.8 40.6 MAG 0.0289 0.0508 0.0670 0.0780 0.0886 0.0984 0.107 0.117 0.126 0.135 0.145 0.155 0.166 0.176 0.187 0.198 0.209 0.221 0.232 0.243 0.256 0.267 0.279 0.291 0.304 S12 ANG 76.9 66.6 61.8 58.9 58.3 57.9 58.0 58.4 58.6 59.4 59.6 59.6 59.8 59.9 59.7 59.5 59.4 58.9 58.6 58.1 57.5 57.0 56.1 55.4 54.7 MAG 0.918 0.802 0.690 0.603 0.534 0.485 0.448 0.419 0.396 0.377 0.361 0.350 0.339 0.327 0.320 0.311 0.305 0.299 0.292 0.287 0.283 0.277 0.272 0.270 0.264 S22 ANG - 15.9 - 27.7 - 35.3 - 39.9 - 42.5 - 44.0 - 45.5 - 46.6 - 47.7 - 48.8 - 50.2 - 51.4 - 53.2 - 54.6 - 56.1 - 58.2 - 59.8 - 62.4 - 64.9 - 67.0 - 69.6 - 72.9 - 75.1 - 78.7 - 81.3 10 2SA1977 S-PARAMETER (VCE = 8 V, IC = 20 mA, Zo = 50 ) f MHz 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 MAG 0.310 0.243 0.205 0.165 0.172 0.169 0.166 0.169 0.172 0.176 0.182 0.188 0.194 0.202 0.209 0.217 0.224 0.233 0.240 0.247 0.255 0.263 0.272 0.278 0.286 S11 ANG - 47.6 - 82.1 - 107 - 125 - 140 - 153 - 163 - 173 179 172 166 160 156 151 147 144 140 137 134 132 129 126 124 122 120 MAG 20.39 14.87 11.25 8.95 7.329 6.232 5.414 4.778 4.3 3.902 3.576 3.310 3.080 2.875 2.711 2.564 2.431 2.315 2.212 2.123 2.037 1.965 1.896 1.833 1.778 S21 ANG 144. 123. 111. 102. 96.6 91.6 87.5 83.5 80.2 77.1 74.1 71.2 68.7 66.0 63.4 61.0 58.6 56.4 54.2 52.0 49.8 47.7 45.7 43.7 41.7 MAG 0.0218 0.0375 0.0514 0.0643 0.0777 0.0909 0.104 0.117 0.130 0.143 0.156 0.169 0.182 0.195 0.208 0.221 0.234 0.247 0.259 0.272 0.284 0.296 0.309 0.321 0.332 S12 ANG 77.0 72.7 71.4 71.6 71.5 71.5 71.0 70.6 70.0 69.3 68.6 67.7 66.7 66.0 64.9 63.9 62.8 61.7 60.8 59.8 58.3 57.2 56.1 54.8 53.7 MAG 0.798 0.611 0.488 0.417 0.365 0.331 0.308 0.289 0.274 0.262 0.251 0.244 0.235 0.227 0.221 0.213 0.209 0.204 0.197 0.193 0.188 0.183 0.179 0.177 0.171 S22 ANG - 25.2 - 37.8 - 43.1 - 45.1 - 45.7 - 45.8 - 46.5 - 47.3 - 47.9 - 49.1 - 50.4 - 51.5 - 53.7 - 55.6 - 57.0 - 59.5 - 61.7 - 64.7 - 67.9 - 70.0 - 73.3 - 77.5 - 80.1 - 84.0 - 87.7 11 2SA1977 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard : Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 |
Price & Availability of 2SA1977
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