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PTF180101
LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz
Description
The PTF180101 is a 10 W, internally-matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellent device lifetime and reliability.
Features
* Typical EDGE performance - Average output power = 4.0 W - Gain = 19.0 dB - Efficiency = 28% - EVM = 1.1 % Typical WCDMA performance - Average output power = 1.8 W - Gain = 18.0 dB - Efficiency = 20% - ACPR = -45 dBc Typical CW performance - Output power at P-1dB = 15 W - Efficiency = 50% Integrated ESD protection: Human Body Model Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 10 W (CW) output power PTF180101S Package 32259
EDGE EVM Performance EVM and Efficiency vs. Output Power
VDD = 28 V, IDQ = 0.18 A, f = 1989.8 MHz
4 40 Efficiency 3 30
*
EVM RMS (Average %) x
*
Efficiency (%)
2
20
* * * *
1 EVM 0 25 30 35 40
10
0
Output Power (dBm)
ESD: Electrostatic discharge sensitive device -- observe handling precautions!
RF Characteristics, EDGE Operation at TCASE = 25C unless otherwise indicated
EDGE Measurements (not subject to production test--verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 180 mA, POUT = 4 W, f = 1989.8 MHz
Characteristic
Error Vector Magnitude Modulation Spectrum @ 400 kHz Modulation Spectrum @ 600 kHz Gain Drain Efficiency
Symbol
EVM (RMS) ACPR ACPR Gps
Min
-- -- -- -- --
Typ
1.1 -60 -70 19 28
Max
-- -- -- -- --
Units
% dBc dBc dB %
D
Two-Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 180 mA, POUT = 10 W PEP, f = 1990 MHz, tone spacing = 1 MHz
Characteristic
Gain Drain Efficiency Intermodulation Distortion Data Sheet 1
Symbol
Gps
Min
18 30 --
Typ
19 33 -30
Max
-- -- -28
Units
dB % dBc 2004-02-03
D
IMD
PTF180101
RF Characteristics, WCDMA Operation at TCASE = 25C unless otherwise indicated
WCDMA Measurements (not subject to production test--verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 135 mA, POUT = 1.8 W, f = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.7 dB @ 0.01% CCDF
Characteristic
Adjacent Channel Power Ratio Gain Drain Efficiency
Symbol
ACPR Gps D
Min
-- -- --
Typ
-45 18 20
Max
-- -- --
Units
dBc dB %
Two-Tone Measurements (not subject to production test--verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 135 mA, POUT = 10 W PEP, f = 2170 MHz, tone spacing = 1 MHz
Characteristic
Gain Drain Efficiency @ -30 dBc IM3 Intermodulation Distortion
Symbol
Gps
Min
-- -- --
Typ
18 37 -30
Max
-- -- --
Units
dB % dBc
D
IMD
DC Characteristics at TCASE = 25C unless otherwise indicated
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 A VDS = 28 V, VGS = 0 V VGS = 10 V, VDS = 0.1 A VDS = 28 V, IDQ = 180 mA VGS = 10 V, VDS = 0 V
Symbol
V(BR)DSS IDSS RDS(on) VGS IGSS
Min
65 -- -- 2.5 --
Typ
-- -- 0.83 3.2 --
Max
-- 1.0 -- 4.0 1.0
Units
V A V A
Maximum Ratings at TCASE = 25C unless otherwise indicated
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C, 10 W CW) TSTG RJC
Symbol
VDSS VGS TJ PD
Value
65 -0.5 to +12 200 58 0.333 -40 to +150 3.0
Unit
V V C W W/C C C/W
Data Sheet
2
2004-02-03
PTF180101
Typical Performance measurements taken in broadband test fixture
EDGE Modulation Spectrum Performance
VDD = 28 V, IDQ = 0.18 A, f = 1989.8 MHz
-50 400 kHz -60 50
EVM and Modulation Spectrum Performance
f = 1989.8 MHz, POUT = 3.5 W
8 -40 400 kHz 600 kHz EVM -50 -60 -70 -80 -90 -100 -110 0.30
40 600 kHz
EVM RMS (Average %) .
7 6 5 4 3 2 1 0.00
Efficiency (%)
ACPR (dBc)
-70 -80
30 20 Efficiency 10 0
-90 -100 25 30 35 40
0.05
0.10
0.15
0.20
0.25
Output Power (dBm)
Quiscent Drain Current (A)
Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 0.18 A, f = 1990 MHz
Output Power, Gain & Efficiency (at P-1dB) vs. Frequency
VDD = 28 V, IDQ = 0.18 A
60 50 23 25 24 Efficiency 70 60 50 Output Pow er 40 30 20 Gain 1920 1940 1960 1980 2000 10 0 2020
21 20
Gain
19 18 Efficiency 17 16 29 32 35 38 41 44
40 30 20 10
22 21 20 19 18 1900
Output Power (dBm)
Frequency (MHz)
Data Sheet
3
2004-02-03
Output Power (dBm), Efficiency (%)
Efficiency (%)
Gain (dB)
Gain (dB)
ACPR (dBc)
PTF180101
Typical Performance (cont.)
Power Gain vs. Output Power
VDD = 28 V, f = 1990 MHz
50 Efficiency
IDQ = 0.235 mA
Broadband Test Fixture Performance
VDD = 28 V, IDQ = 0.18 A, POUT = 10 W
21
15 5 -5 Gain -15 Return Loss -25 -35 2020
Gain (dB), Efficiency (%)
40 30 20 10 0 1900
Power Gain (dB)
20
IDQ = 0.180 mA
19
IDQ = 0.135 mA
18 0 1 10 100
1930
1960
1990
Output Power (W)
Frequency (MHz)
Output Power vs. Supply Voltage
Broadband Test Fixture Performance
VDD = 28 V, IDQ = 0.18 A, POUT = 4 W
30 20
IDQ = 0.18 A, f = 1990 MHz
42
Gain (dB), Efficiency (%)
25 20 15 10
Efficiency Gain
10 0 -10 -20 Return Loss -30 -40 2020
Output Power (dBm)
Return Loss (dB)
41 40 39 38 37 22 24 26 28 30 32
5 0 1900
1930
1960
1990
Frequency (MHz)
Supply Voltage (V)
Data Sheet
4
2004-02-03
Return Loss (dB)
PTF180101
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
VDD = 28 V, IDQ = 0.18 A, f1 = 1990 MHz, f2 = 1991 MHz
-20 -30 3rd Order
Gate-Source Voltage vs. Case Temperature
Voltage normalized to typical gate voltage.
Series show current.
1.04
Normalized Bias Voltage
1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 -20
IMD (dBc)
-40 -50 -60 -70 7th -80 30 32 34 36 38 40 42 5th
0.05 A 0.28 A 0.51 A 0.74 A 0.97 A 1.20 A
0
20
40
60
80
100
Output Power, PEP (dBm)
Case Temperature (C)
Typical Performance, WCDMA Operation
Two-Tone Drive-up
VDD = 28V, IDQ = 135 mA, f = 2170 MHz, tone spacing = 1 MHz
-20 -25 Efficiency 40 35
Single-Carrier WCDMA Drive-Up
VDD = 28 V, IDQ = 135 mA, f = 2170 MHz, 3GPP WCDMA signal, Test Model 1 w/16 DPCH, 67% clipping, P/A R = 8.7 dB, 3.84 MHz bandwidth
-35 -40 25 20 15 ACPR -50 -55 -60 17 22 27 32 37 10 5 0
Drain Efficiency (%)
-35 -40 -45 -50 -55 -60 20 25 30 35 40 45 IM3
25 20 15 10 5 0
Adjacent Channel Power Ratio (dBc)
Intermodulation Distortion (dBc)
-30
30
Efficiency
-45
Output Power (dBm), PEP
Average Output Power (dBm)
Data Sheet
5
2004-02-03
Drain Efficiency (%)
PTF180101
Broadband Circuit Impedance Data
RD G E
Z0 = 50
D
G S
0.0
0.1
Frequency
MHz 1920 1930 1960 1990 2000 2020
D LOAD S T OW AR NGT H LE
Z Source
R 7.3 8.1 8.3 6.5 6.3 6.2 jX -2.3 -2.2 -2.6 -4.1 -4.0 -3.7
Z Load
R 4.6 4.6 4.5 4.5 4.5 4.6 jX 2.4 2.5 2.6 2.5 2.5 2.5
Z Source
1920 MHz 2020 MHz
0. 1
Data Sheet
6
2004-02-03
0.2
0.1
Z Source
Z Load
Z Load
2020 MHz 1920 MHz
PTF180101
Reference Circuits
VGG
R1 C1 R2 R3 C5 C6
+
VDD
C7
l5
C3
DUT
C8
RF_IN
l1
C2
l2
l3
l4
C4
l6
l7
C9
l8
RF_OUT
180101_sch
Reference Circuit Schematic Circuit Assembly Information DUT PTF180101 Circuit Board 0.76 mm [.030"] thick, r = 4.5 Microstrip l1 l2 l3 l4 l5 l6 l7 l8 Electrical Characteristics at 1990 MHz 0.133 , 50 0.096 , 50 0.155 , 9.5 0.008 , 12.8 0.286 , 70 0.247 , 12.8 0.145 , 50 0.008 , 50
LDMOS Transistor Rogers TMM4, 2 oz. Copper Dimensions: L x W (mm) 10.92 x 1.37 7.87 x 1.37 11.30 x 12.45 0.64 x 8.86 23.88 x 0.71 18.29 x 8.86 11.81 x 1.37 0.64 x 1.37 Dimensions: L x W (in.) 0.430 x 0.054 0.310 x 0.054 0.445 x 0.490 0.025 x 0.349 0.940 x 0.028 0.720 x 0.349 0.465 x 0.054 0.025 x 0.054
Data Sheet
7
2004-02-03
PTF180101
Reference Circuits (cont.)
1930-1990 MHz Operation Component C1, C3, C5, C8 C2 C4 C6 C7 C9 R1, R2, R3 Description Capacitor, 10 pF Capacitor, 1.7 pF Capacitor, 2.0 pF Capacitor, 0.1 F, 50 V Capacitor, 100 F, 50 V Capacitor, 0.6 pF Resistor, 220 ohm, 1/4 W Manufacturer ATC ATC ATC Digi-Key Digi-Key ATC Digi-Key P/N or Comment 100B 100 100B 1R7 100A 2R0 P4525-ND P5182-ND 100A 0R6 220QBK
2.11-2.17 GHz Operation Component C1, C3, C5, C8 C2 C4 C6 C7 C9 R1, R2, R3 Description Capacitor, 10 pF Capacitor, 0.8 pF Capacitor, 2.2 pF Capacitor, 0.1 F, 50 V Capacitor, 100 F, 50 V Capacitor, 1.0 pF Resistor, 220 ohm, 1/4 W Manufacturer ATC ATC ATC Digi-Key Digi-Key ATC Digi-Key P/N or Comment 100B 100 100B 0R8 100A 2R2 P4525-ND P5182-ND 100A 1R0 220QBK
Reference circuit assembly diagramt1 (not to scale)
1 Gerber files for this circuit are available upon request.
Data Sheet
8
2004-02-03
PTF180101
Ordering Information
Type PTF180101S Package Outline 32259 Package Description Thermally enhanced, surface mount Marking PTF180101S
Package Outline Specifications Package 32259
1.78 [.070] 60 X 6.60 [60 X .260] 4X R0.25 [R.010] MAX. 2X 1.27 [.050] 2X 3.30 [.130]
C L
2X 0.200.03 [.008.001]
D
1.02 [0.040] 0.51 [0.020] 6.86 [.270] 10.160.25 [.400.010]
2X 3.30 [.130]
C L
4X 0.51 [.020] 4X 0.25 MAX [.010] 6.86 [.270] 6.48 [.255] SQ 2.99 0.38 [1.14 .010]
G
2X 1.650.51 [.065.020] LEAD COPLANARITY BOTTOM OF LEAD TO BOTTOM OF PACKAGE .000.002 (TYP) 0-7 DRAFT ANGLE
0.740.05 [.028.002]
S
6.35 [.250] SQ
H-32259-2-1-2307
Notes: Unless otherwise specified 1. 2. 3. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. Primary dimensions are mm. Alternate dimensions are inches. Pins: D = drain, S = source, G = gate Lead thickness: 0.21 0.03 [.008 .001]
Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 9 2004-02-03
PTF180101 Revision History: Previous Version: Page 1, 5, 7 2004-02-03 none Data Sheet
Subjects (major changes since last revision) Add information about WCDMA operation
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International
Edition 2004-02-03 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen, Germany (c) Infineon Technologies AG 2003. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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