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| e PTB 20264 10 Watts, 1.8-1.9 GHz Cellular Radio RF Power Transistor Description The 20264 is an NPN, common emitter RF power transistor intended for 26 Vdc class AB operation from 1.8 to 1.9 GHz. Rated at 10 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 26 Volt, 1.845 GHz Characteristics - Output Power = 10 Watts - Gain = 9.4 dB Typ at 5 Watts Class AB Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel Typical Output Power and Efficiency vs. Input Power 12 80 Output Power 10 8 6 4 2 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Output Power (Watts) Efficiency 40 Efficiency (%) 60 20 26 4 LO TC OD E VCC = 26 V ICQ = 50 mA f = 1845 MHz 20 0 Input Power (Watts) Package 20243 Maximum Ratings Parameter Collector-Emitter Voltage, RBE = 10 Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 50 50 4.0 2.0 30 0.173 -40 to +150 5.8 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20264 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 10 mA VBE = 0 V, IC = 10 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 250 mA Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Min 22 55 3.5 20 Typ 26 60 5 50 Max -- -- -- 120 Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain at POUT = 5 Watts (VCC = 26 Vdc, ICQ = 50 mA, f = 1805 MHz, 1845 MHz, 1880 MHz) Gain Compression at POUT = 5 Watts (VCC = 26 Vdc, ICQ = 50 mA, f = 1805 MHz, 1845 MHz, 1880 MHz) Gain at POUT = 10 Watts (VCC = 26 Vdc, ICQ = 50 mA, f = 1845 MHz) Gain Compression at POUT = 10 Watts (VCC = 26 Vdc, ICQ = 50 mA, f = 1845 MHz) Collector Efficiency at POUT = 10 Watts (VCC = 26 Vdc, ICQ = 50 mA, f = 1845 MHz) Load Mismatch Tolerance (VCC = 26 Vdc, POUT = 10 W, ICQ = 50 mA, f = 1845 MHz--all phase angles at frequency of test) C 40 -- -- -- -- 5:1 % -- Symbol Gpe Min 9.0 Typ 9.4 Max -- Units dB -- -- -- 0.2 dB Gpe -- 8.4 -- -- -- -- 0.8 dB dB Typical Performance Output Power vs. Supply Voltage 12 12 Gain vs. Frequency (as measured in a broadband circuit) Output Power (Watts) 11 10 10 Gain (dB) 8 VCC = 26 V ICQ = 50 mA POUT = 5 W ICQ = 50 mA 9 PIN = 1.3 W f = 1845 MHz 25.0 25.5 26.0 26.5 27.0 27.5 6 8 24.5 4 1800 1820 1840 1860 1880 1900 Supply Voltage (Volts) Frequency (MHz) 2 9/28/98 e Impedance Data (data shown for fixed-tuned broadband circuit) VCC = 26 Vdc, POUT = 10 W, ICQ = 50 mA PTB 20264 Z0 = 50 Z Source Z Load Frequency GHz 1805 1850 1880 R 11.4 11.0 10.9 Z Source jX 2.6 3.7 4.3 R 12.2 12.2 12.4 Z Load jX 8.1 9.6 10.6 Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) 1997 Ericsson Inc. EUS/KR 1301-PTB 20264 Uen Rev. A 09-28-98 3 9/28/98 |
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