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| e PTB 20111 85 Watts, 860-900 MHz Cellular Radio RF Power Transistor Description The 20111 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz. Rated at 85 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 25 Volt, 860-900 MHz Characteristics - Output Power = 85 Watts - Collector Efficiency = 50% at 85 Watts - IMD = -30 dBc Max at 60 W(PEP) Class AB Characteristics Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 100 80 60 40 Output Power (Watts) 2011 1 LOT COD E VCC = 25 V 20 0 0 4 8 12 16 ICQ = 200 mA f = 900 MHz Input Power (Watts) Package 20216 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 40 65 4.0 20 159 0.91 -40 to +150 1.1 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20111 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 100 mA VBE = 0 V, IC = 100 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Min 25 55 3.5 20 Typ 30 70 5 50 Max -- -- -- 100 Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 25 Vdc, Pout = 85 W, ICQ = 200 mA, f = 900 MHz) Collector Efficiency (VCC = 25 Vdc, Pout = 85 W, ICQ = 200 mA, f = 900 MHz) Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 60 W(PEP), ICQ = 200 mA, f = 900 MHz--all phase angles at frequency of test) Symbol Gpe C Min 8.5 50 -- Typ 9.5 -- -- Max -- -- 10:1 Units dB % -- Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 25 Vdc, Pout = 85 W, ICQ = 200 mA) Z Source Z Load Frequency MHz 860 880 900 R 1.7 2.0 1.7 Z Source jX -0.8 -1.2 -0.8 R 1.7 1.8 1.7 Z Load jX -1.6 -1.9 -1.6 2 e Typical Performance Gain vs. Frequency 11 PTB 20111 Intermodulation Distortion vs. Power Output -20 -24 (as measured in a broadband circuit) 10 IMD (dBc) Gain (dB) -28 -32 -36 -40 9 VCC = 25 V ICQ = 200 mA f1 = 899.95 MHz f2 = 900.00 MHz VCC = 25 V 8 ICQ = 200 mA Pout = 85 W 870 880 890 900 7 860 20 30 40 50 60 70 80 90 Frequency (MHz) Output Power (Watts-PEP) Efficiency vs. Output Power 60 50 100 Output Power vs. Supply Voltage Output Power (Watts) 90 80 70 60 50 Efficiency (%) 40 30 20 10 0 45 50 55 60 65 70 75 80 85 90 VCC = 25 V ICQ = 200 mA f = 900 MHz ICQ = 200 mA Pin = 10 W f = 900 MHz 18 20 22 24 26 28 Output Power (Watts) Vcc, Supply Voltage Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) Ericsson Components AB 1995 EUS/KR 1301-PTB 20111 Uen Rev. D 09-28-98 3 |
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