NTE299 Silicon NPN Transistor RF Power Amp, Driver
Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Power Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125C Storage Temperatur Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +125C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25C/W Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current DC Current Gain Power Output Symbol Test Conditions Min 75 35 4 - 10 1.2 Typ - - - - 70 1.4 Max Unit - - - 10 300 - W V V V A V(BR)CBO IC = 1mA, IE = 0 V(BR)CEO IC = 10mA, RBE = V(BR)EBO IE = 1mA, IC = 0 ICBO hFE PO VCB = 30V, IE = 0 VCE = 10V, IC = 0.1A VCC = 12V, f = 27MHz, PIN = 75mW, IC < 166mA
.380 (9.56) C .500 (12.7) 1.200 (30.48) Ref .300 (7.62) .180 (4.57) .132 (3.35) Dia
.325 (9.52)
.070 (1.78) x 45 Chamf .050 (1.27)
.400 (10.16) Min C B E
.100 (2.54)
.100 (2.54)
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