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| Datasheet File OCR Text: |
| NTE2987 Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch Features: D Avalanche Rugged Technology D Logic Level Gate Drive D RDS(on) = 0.09 Typ. at VGS = 5V D +175C Operating Temperature D Fast Switching D Low Gate Charge D High Current Capability Absolute Maximum Ratings: Drain Current, ID Continuous TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7W/C Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Avalanche Current, Repetitive or Non-Repetitive (Note 2), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120mJ Repetitive Avalanche Energy (Note 2), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mJ Avalanche Current, Repetitive or Non-Repetitive (Note 4), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A Drain-Source Voltage (VGS = 0), VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Drain-Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +175C Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), TL . . . . . . . . . . +300C Thermal Resistance: Maximum Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43C/W Typical Case-to-Sink (Mounting surface flat, smooth, and greased), RthCS . . . . . . 0.5C/W Maximum Junction-to-Ambient (Free Air Operation), RthJA . . . . . . . . . . . . . . . . . . . 62.5C/W Note Note Note Note 1. 2. 3. 4. Pulse width limited by safe operating area. Pulse width limited by TJ max, Duty Cycle < 1%. VDD = 25V, ID = IAR, Starting TJ = +175C. TC = +100C, Pulse width limited by TJ max, Duty Cycle < 1%. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Drain-Source Breakdown Voltage Drain-to-Source Leakage Current BVDSS IDSS IGSS IGSS VGS(th) RDS(on) VGS = 0v, ID = 250A VDS = 100V, VGS = 0 VDS = 80V, VGS = 0V, , TC = +150C Gate-Source Leakage Forward Gate-Source Leakage Reverse ON (Note 5) Gate Threshold Voltage Static Drain-Source ON Resistance On-State Drain Current Dynamic Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr VDD = 30V, ID = 10A, RG = 50, VGS = 5V VDD = 80V, ID = 20A, RG = 50, VGS = 5V VGS = 5V, ID = 20A, VDD = 80V - - - - - - - 22 6 12 50 140 80 80 30 - - 70 200 110 110 nC nC nC ns ns ns ns gfs Ciss Coss Crss VDS > ID(on) x RDS(on)max, ID = 10A, Note 5 VGS = 0V, VDS = 25V, f = 1MHz 10 - - - 16 - mhos pF pF pF VDS = VGS, ID = 250A VGS = 5V, ID = 10A VDS > ID(on) x RDS(on)max, VGS = 10V 1.0 - 1.6 0.09 2.5 0.12 V VGS = 15V VGS = -15V 100 - - - - - - - - - - 1 10 100 -100 V A A nA nA Symbol Test Conditions Min Typ Max Unit ID(on) 20 - - A 1200 1500 250 60 350 90 Source-Drain Diode Ratings and Characteristics Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current (Body Diode) (Body Diode) Note 1 ISD = 20A, VGS = 0V, Note 5 TJ = +150C, VDD = 50V, ISD = 20A, di/dt = 100A/s - - - - - - - - 130 0.4 20 80 1.5 - - A A V ns C IRRM - 6 - A Note 1. Pulse width limited by safe operating area. Note 5. Pulse Test: Pulse Width = 300s, Duty Cycle = 1.5%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain/Tab |
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