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| TPC6005 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6005 Notebook PC Applications Portable Equipment Applications * * * * Low drain-source ON resistance: RDS (ON) = 21 m (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement-model: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 A) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage DC Drain current (Note 1) Pulse (Note 1) Drain power dissipation (t = 5 s) (Note 2a) Drain power dissipation (t = 5 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range (Note 4) Symbol VDSS VDGR VGSS ID Rating 30 30 12 6 A IDP 24 Unit V V V JEDEC W 2-3T1A PD 2.2 JEITA TOSHIBA PD EAS IAR EAR Tch Tstg 0.7 5.8 3 0.22 150 -55 to 150 W mJ A mJ C C Weight: 0.011 g (typ.) Circuit Configuration 6 5 4 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Symbol Rth (ch-a) Max 56.8 Unit C/W 1 2 3 Marking (Note 5) Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Rth (ch-a) 178.5 C/W Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page. This transistor is an electrostatically sensitive device. Please handle it with caution. S2E 1 2001-12-17 TPC6005 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth Test Condition VGS = 10 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -12 V VDS = 10 V, ID = 200 mA VGS = 2.0 V, ID = 3 A Drain-source ON resistance RDS (ON) VGS = 2.5 V, ID = 3 A VGS = 4.5 V, ID = 3 A Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd VDD ~ 24 V, VGS = 5 V, ID = 6 A |Yfs| Ciss Crss Coss tr ton 5V VGS 0V 4.7 W ID = 3 A RL = 5 W VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, ID = 3 A Min 3/4 3/4 30 18 0.5 3/4 3/4 3/4 5 3/4 3/4 3/4 3/4 VOUT 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 31 27 21 10 1420 170 180 8 13 18 70 19 13.5 5.5 Max 10 10 3/4 3/4 1.2 41 35 28 3/4 3/4 3/4 3/4 3/4 3/4 ns 3/4 3/4 3/4 3/4 3/4 nC pF S mW Unit mA mA V V Duty < 1%, tw = 10 ms = VDD ~ 15 V - Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Pulse drain reverse current Forward voltage (Diode) (Note 1) Symbol IDRP VDSF Test Condition 3/4 IDR = 6 A, VGS = 0 V Min 3/4 3/4 Typ. 3/4 3/4 Max 24 -1.2 Unit A V Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 25.4 0.8 Unit: (mm) FR-4 25.4 25.4 0.8 Unit: (mm) (a) (b) Note 3: VDD = 24 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 W, IAR = 3.0 A Note 4: Repetitive rating; pulse width limited by maximum channel temperature Note 5: Black round marking "*" locates on the left lower side of parts number marking "S2E" indicates terminal No.1. 2 2001-12-17 TPC6005 ID - VDS 5 10 8 4 6 2.5 3 1.4 2 1.3 1 VGS = 1.2 V 0 0 0 0 2 4 2 1.7 1.8 1.6 Common source Ta = 25C Pulse test 1.5 10 2, 2.5 4, 6, 8, 10 8 ID - VDS Common source Ta = 25C Pulse test 1.95 1.9 6 (A) ID Drain current Drain current ID (A) 4 1.8 1.7 1.6 VGS = 1.5 V 1 2 3 4 5 0.1 0.2 0.3 0.4 0.5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 12 Common source VDS = 10 V 10 Pulse test 0.5 VDS - VGS Common source Ta = 25C Pulse test (V) VDS Drain-source voltage 25C 100C 0.4 (A) 8 ID 0.3 Drain current 6 0.2 ID = 6 A 0.1 1.5 A 3A 4 2 Ta = -55C 0 0 0.5 1 1.5 2 2.5 0 0 2 4 6 8 10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 100 100 RDS (ON) - ID Forward transfer admittance |Yfs| (S) 50 30 Ta = -55C 25C 100C 10 5 3 Drain-source on resistance RDS (ON) (m9) VGS = 2 V 30 2.5 V 4.5 V 10 Common source VDS = 10 V Pulse test 3 Common source Ta = 25C Pulse test 1 1 3 5 10 30 50 100 1 0.1 0.3 1 3 10 30 100 Drain current ID (A) Drain current ID (A) 3 2001-12-17 TPC6005 RDS (ON) - Ta 60 Common source Pulse test 100 IDR - VDS Drain-source on resistance RDS (ON) (m9) ID = 6 A 3A 1.5 A 6A Drain reverse current IDR (A) 50 30 40 10 10 V 3V 30 VGS = 2 V ID = 1.5 A, 3 A, 6 A ID = 1.5 A, 3 A 3 5V 1V VGS = 0 V 20 1 10 VGS = 4.5 V VGS = 2.5 V -40 0 40 80 120 160 0.3 0 -80 0.1 0 Common source Ta = 25C Pulse test 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 2.0 Vth - Ta Common source VDS = 10 V ID = 200 mA Pulse test 3000 (V) Ciss 1000 Gate threshold voltage Vth Capacitance C (pF) 1.5 300 Coss 100 Common source 30 VGS = 0 V f = 1 MHz Ta = 25C 10 0.1 0.3 1 Crss 1.0 0.5 3 10 30 100 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS Ambient temperature Ta (C) PD - Ta 2.5 (1) t = 5 s 50 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (1) DC 1 (2) t = 5 s 0.5 (2) DC 0 0 Dynamic input/output characteristics Common source ID = 6 A 40 Ta = 25C Pulse test 30 VDS 20 6V 10 VDD = 24 V 4 12 V 8 VGS 16 20 (W) (V) 2 PD VDS Drain power dissipation Drain-source voltage 40 80 120 160 0 0 8 16 24 32 0 40 Ambient temperature Ta (C) Total gate charge Qg (nC) 4 2001-12-17 Gate-source voltage 1.5 12 VGS (V) TPC6005 rth - tw 1000 rth (C/W) 300 100 Device mounted on a glassepoxy board (b) (Note 2b) Transient thermal impedance 30 10 Device mounted on a glassepoxy board (a) (Note 2a) 3 1 0.3 Single pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse tw (s) Safe operating area 100 30 10 ID max (pulsed)* 1 ms* (A) Drain current ID 3 1 0.3 0.1 0.03 0.01 10 ms* *: Single nonrepetitive pulse Ta = 25C 0.003 Curves must be derated linearly with increase in temperature 0.001 0.01 0.03 0.1 0.3 1 VDSS max 3 10 30 100 Drain-source voltage VDS (V) 5 2001-12-17 TPC6005 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2001-12-17 |
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