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STP11NM60FD STP11NM60FDFP - STB11NM60FD-1
N-CHANNEL 600V - 0.40 - 11A TO-220 / TO-220FP/I2PAK FDmeshTMPower MOSFET (with FAST DIODE)
TYPE STP11NM60FD STP11NM60FDFP STB11NM60FD-1 VDSS 600 V 600 V 600 V RDS(on) < 0.45 < 0.45 < 0.45 ID 11 A 11 A 11 A
3 1 2
1 2 3
TYPICAL RDS(on) = 0.40 HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS DESCRIPTION The FDmeshTM associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. APPLICATIONS ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT
TO-220
TO-220FP
3 12
I2PAK
INTERNAL SCHEMATIC DIAGRAM
ORDERING INFORMATION
SALES TYPE STP11NM60FD STP11NM60FDFP STB11NM60FD-1 MARKING P11NM60FD P11NM60FDFP B11NM60FD-1 PACKAGE TO-220 TO-220FP I2PAK PACKAGING TUBE TUBE TUBE
September 2003
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STP11NM60FD - STP11NM60FDFP - STB11NM60FD-1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value STP11NM60FD STB11NM60FD-1 VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) VISO Tstg Tj Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25C Drain Current (continuos) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature --65 to 150 11 7 44 160 0.88 20 2500 600 600 30 11 (*) 7 (*) 44 (*) 35 0.28 STP11NM60FDFP V V V A A A W W/C V/ns V C Unit
(*)Pulse width limited by safe operating area (1)ISD<11A, di/dt<400A/s, VDDTHERMAL DATA
TO-220/I2PAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 0.78 62.5 300 TO-220FP 3.57 C/W C/W C
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 35 V) Max Value 5.5 350 Unit A mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) ON/OFF
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 30V VDS = VGS, ID = 250 A VGS = 10V, ID = 5.5 A 3 4 0.40 Min. 600 1 100 100 5 0.45 Typ. Max. Unit V A A nA V
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STP11NM60FD - STP11NM60FDFP - STB11NM60FD-1
DYNAMIC
Symbol gfs (1) Ciss Coss Crss Coss eq. (2) RG Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Gate Input Resistance VGS = 0V, VDS = 0V to 400V f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain Test Conditions VDS > ID(on) x RDS(on)max, ID = 5.5A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 5.2 1000 208 28 100 3 Max. Unit S pF pF pF pF
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 250V, ID = 5.5A RG = 4.7 VGS = 10V (see test circuit, Figure 3) VDD = 400V, ID = 11A, VGS = 10V Min. Typ. 20 16 28 7.8 13 40 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 400V, ID = 11A, RG = 4.7, VGS = 10V (see test circuit, Figure 5) Min. Typ. 10 15 24 Max. Unit ns ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 11A, VGS = 0 ISD = 11A, di/dt = 100A/s, VDD = 50V (see test circuit, Figure 5) 190 1.1 14.5 Test Conditions Min. Typ. Max. 11 44 1.5 Unit A A V ns C A
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
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STP11NM60FD - STP11NM60FDFP - STB11NM60FD-1
Safe Operating for TO-220/I2PAK Safe Operating Area for TO-220FP
Thermal Impedance for TO-220/I 2PAK
Thermal Impedance for TO-220FP
Output Characteristics
Transfer Characteristics
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STP11NM60FD - STP11NM60FDFP - STB11NM60FD-1
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
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STP11NM60FD - STP11NM60FDFP - STB11NM60FD-1
Source-drain Diode Forward Characteristics
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STP11NM60FD - STP11NM60FDFP - STB11NM60FD-1
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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STP11NM60FD - STP11NM60FDFP - STB11NM60FD-1
TO-220 MECHANICAL DATA
mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 oP Q
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STP11NM60FD - STP11NM60FDFP - STB11NM60FD-1
TO-220FP MECHANICAL DATA
mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.5 1.5 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O
A
B
L3 L6 L7
F1 F
D
G1 H
F2
L2 L5
E
123
L4
G
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STP11NM60FD - STP11NM60FDFP - STB11NM60FD-1
TO-262 (I2PAK) MECHANICAL DATA
mm. DIM. MIN. A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 TYP MAX. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 MIN. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 TYP. MAX. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch
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STP11NM60FD - STP11NM60FDFP - STB11NM60FD-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com
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