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(R)
SMTHBT200
TRISILTM FOR LINE CARD PROTECTION
FEATURES BIDIRECTIONAL CROWBAR PROTECTION REPETITIVE PEAK PULSE CURRENT: IPP = 100 A (10/1000 s) HOLDING CURRENT: IH = 150 mA BREAKDOWN VOLTAGE : 200V min BREAKOVER VOLTAGE : 265V max
SMC
DESCRIPTION This protection device has been especially designed to protect subscriber line cards using SLICS without integrated ring generators. The SMTHBT200 device protects ring generator relays against transient SCHEMATIC DIAGRAM
INACCORDANCE WITHTHEFOLLOWINGSTANDARDS : 10/700 s 5/310 s - VDE 0433: 10/700 s 5/310 s - VDE 0878: 1.2/50 s 1/20 s - FCC Part 68: 2/10 s BELLCORE TR-NWT-001089: 2/10 s - BELLCORE TR-NWT-000974: 10/1000 s 10/1000 s - CCITT K20: 4 kV 100 A 4 kV 100 A 4 kV 100 A 2.5 kV 500 A 1 kV 100 A
August 1999 - Ed : 3A
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SMTHBT200
THERMAL RESISTANCES Symbol Rth(j-I) Rth(j-a) Junction to leads Junction to ambient on printed circuit (with standard footprint dimensions) Parameter Value 10 75 Unit C/W C/W
ABSOLUTE MAXIMUM RATINGS (Tamb = 25C, unless otherwise specified) Symbol Ipp Parameter Peak pulse current: 10/1000 s (open circuit voltage waveform 10/1000 s) 8/20 s (open circuit voltage waveform 4kV 1.2/50 s) Non repetitive surge peak on-state current Critical rate of rise of off-state voltage Maximum lead temperature for soldering during 10s Storage temperature range Maximum junction temperature tp = 20ms VRM Value 100 250 55 5 260 - 55 to + 150 150 Unit A A A KV/s C C C
ITSM dV/dt TL Tstg Tj
Note 1: Pulse waveform 10 / 1000 s 8 / 20 s 5 / 310 s 1 / 20 s 2 / 10 s tr = 10 s tr = 8 s tr = 5 s tr = 1 s tr = 2 s tp = 1000 s tp = 20 s tp = 310 s tp = 20 s tp = 10 s
% IPP
100 50 0 tr tp
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SMTHBT200
ELECTRICAL CHARACTERISTICS (Tamb = 25C) Symbol VRM IRM VR VBR VBO IH IBO IPP C Parameter Stand-off voltage Leakage current at stand-off voltage Continuous Reverse voltage Breakdown voltage Breakover voltage Holding current Breakover current Peak pulse current Capacitance
STATIC PARAMETERS Type IRM @ VRM max. A SMTHBT200 10 V 180 IR @ VR max. note 1 A 50 V 200 VBO max. max. V 265 mA 150 @ I BO min. note 2 mA 800 IH min. note 3 mA 150 C max. note 4 pF 150
Note 2 : IR measured at VR guarantees VBR>VR Note 2 : Measured at 50Hz, see test circuit 1. Note 3 : See functional holding current test circuit 2. Note 4 : VR=1V bias, VRMS=1V, F=1MHz.
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SMTHBT200
TEST CIRCUIT 1 FOR I BO and V BO parameters:
tp = 20ms
Auto Transformer 220V/2A
static relay. K
R1
140
R2
240
220V
Vout IBO measure
Transformer 220V/800V 5A
D.U.T
V BO measure
TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - VOUT = 250 VRMS, R1 = 140 . - Device with VBO 200 Volt - VOUT = 480 VRMS, R2 = 240 .
TEST CIRCUIT 2 for IH parameter.
R D.U.T. VBAT = - 48 V Surge generator
- VP
This is a GO-NO GO test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : - Adjust the current level at the IH value by short circuiting the D.U.T. - Fire the D.U.T. with a surge current : Ipp = 10A, 10/1000 s. - The D.U.T. will come back to the off-state within 50 ms max.
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SMTHBT200
Fig 1 : Non repetitive surge peak on-state current versus overload duration (Tj initial = 25 C). Fig 2 : On-state voltage versus on-state current (typical values).
ITSM(A) 70 60 50 40 30 20 10 0 1E-2 1E-1 t(s) 1E+0 1E+1 1E+2 1E+3
F=50Hz
I T (A) 50
Tj=25C
10
VT (V) 1 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0
Fig 3 : Relative variation of holding current versus junction temperature.
Fig 4 : Variation of thermal impedance junction to ambient versus pulse duration.
IH[Tj] / IH[Tj=25C] 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 -20 0 20
Zth(j-a)(CW) 100
10
Tj(C) 40 60 80 100 120
1 1E-3 1E-2 1E-1
tp(s) 1E+0 1E+1 1E+2 5E+2
Fig 5 : Relative variation of junction capacitance versus reverse voltage applied (typical values).
Note : For VBR upper than 62 V, the curve can be extrapolated (dotted line)
C[VR]/C[VR=1V] 1.0
F=1MHz
0.5
0.2 VR(V) 0.1 1 10 100 300
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SMTHBT200
PACKAGE MECHANICAL DATA SMC (Plastic) DIMENSIONS REF.
E1
Millimeters Min. Max. 2.45 0.20 3.2 0.41 8.15 7.15 4.70 6.25 1.60 1.90 0.05 2.90 0.15 7.75 6.60 4.40 5.55 0.75
Inches Min. 0.075 0.002 0.114 0.006 0.305 0.260 0.173 0.218 0.030 Max. 0.096 0.008 0.126 0.016 0.321 0.281 0.185 0.246 0.063
A1
D
A2 b c E E1
A1
E
E2 D
b
C E2 L
A2
L
FOOT PRINT (in millimeters)
Packaging : tape and reel
3.3
MARKING Package SMC Type SMTHBT200 Marking WO4
2.0
4.2
2.0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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