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| IXTH 15N70 VDSS MegaMOSTMFET N-Channel Enhancement Mode ID (cont) RDS(on) = 700 V = 15 A = 0.45 Symbol VDSS VDGR V GS VGSM I D25 I DM PD TJ TJM Tstg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C Maximum Ratings 700 700 20 30 15 60 300 -55 ... +150 150 -55 ... +150 V V V V A A W C C C TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Mounting torque 1.13/10 Nm/lb.in. 6 300 g C Features q Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s q q q q International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure High commutating dv/dt rating Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 700 2 4.5 100 TJ = 25C TJ = 125C 200 1 0.45 V V nA A mA Applications q VDSS VGS(th) I GSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V q q q Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Advantages q VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 s, duty cycle d 2 % q q Easy to mount with 1 screw (isolated mounting screw hole) Space savings High power density IXYS reserves the right to change limits, test conditions, and dimensions. 94503C(5/96) IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 IXTH 15N70 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 11 18 4500 S pF pF pF 40 60 90 60 170 40 85 0.42 0.25 ns ns ns ns nC nC nC K/W K/W TO-247 AD Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK V DS = 10 V; ID = 0.5 ID25, pulse test 1 2 3 VGS = 0 V, VDS = 25 V, f = 1 MHz 420 140 20 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 RG = 2 , (External) 43 70 40 150 Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain Dim. VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 29 60 Source-Drain Diode Symbol IS I SM VSD trr Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 15 60 1.5 600 A A V ns Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 2.87 3.12 b2 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 |
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