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DTV1500LFP
(CRT HORIZONTAL DEFLECTION) HIGH VOLTAGE DAMPER DIODE
MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM VF (max) trr (max) FEATURES AND BENEFITS
s
4A 1500 V 1.5 V 170 ns
K
A
A K
s
s
s
s
s
s
High breakdown voltage capability High frequency operation Specified turn on switching characteristics Very fast recovery diode Low static and peak forward voltage drop for low dissipation Insulated package: TO-220FPAC Insulating voltage = 2000V DC Capacitance = 12pF Planar technology allowing high quality and best electrical characteristics
TO-220FPAC DTV1500LFP
DESCRIPTION High voltage diode especially designed for horizontal deflection stage in standard and high resolution displays for TV's and monitors. This device is packaged in TO-220FPAC (insulated package). ABSOLUTE MAXIMUM RATINGS Symbol VRRM IF(RMS) IFSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Surge non repetitive forward current Storage temperature Maximum operating junction temperature tp = 10ms sinusoidal Value 1500 15 50 - 65 to 150 150 Unit V A A C C
January 2002 - Ed: 2B
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DTV1500LFP
THERMAL RESISTANCE Symbol Rth(j-c) Parameter Junction to Case thermal resistance Value 5.8 Unit C/W
STATIC ELECTRICAL CHARACTERISTICS Value Symbol IR
*
Parameter Reverse leakage current
Test Conditions Min VR = 1500V Tj = 25C Tj = 125C 100 1.2 1.1 Typ Max 100 1000 1.7 1.5
Unit
A
A V
VF
**
Forward voltage drop
IF = 4A
Tj = 25C Tj = 125C
pulse test : * tp = 5 ms , < 2% ** tp = 380 s, < 2%
RECOVERY CHARACTERISTICS Value Symbol trr trr Parameter Reverse recovery time Reverse recovery time Tj = 25C Tj = 25C Test Conditions Min IF = 1 A dIF/dt = -50A/s VR = 30V IF = 100mA IR = 100mA IRR = 10mA Typ 130 850 Max 170 ns ns Unit
TURN-ON SWITCHING CHARACTERISTICS Value Symbol tfr Parameter Forward recovery time Tj = 100C Tj = 25C VFp Peak forward voltage Tj = 100C Tj = 25C Test Conditions Min IF = 4 A dIF/dt = 80 A/s VFR = 3 V IF = 6.5A dIF/dt = 50 A/s VFR = 3V IF = 4A dIF/dt = 80 A/s 28 13 Typ Max 450 450 36 17 V ns Unit
IF =6.5A dIF/dt = 50 A/s
To evaluate the maximum conduction losses use the following equation : P = 1.2 x IF(AV) + 0.075 x IF2(RMS)
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DTV1500LFP
Fig. 1: Power dissipation versus peak forward current (triangular waveform, = 0.45) Fig. 2: Average forward current versus ambient temperature
PF(av)(W) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0
5 4 3 2
IF(av)(A)
T
1
Ip(A) 0 1 2 3 4 5 6
0
=tp/T
tp
Tcase(C) 50 75 100 125 150
0
25
Fig. 3: Forward voltage drop versus forward curent
Fig. 4: Non repetitive surge peak forward current versus overload duration
IFM(A) 10 9 8 7 6 5 4 3 2 1 0 0.4
40
Typical Tj=125C
IM(A) 35
Maximum Tj=125C Maximum Tj=25C
30 25 20 15 10
IM t
Tc=25C
Tc=75C
Tc=100C
=0.5
VFM(V) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
5 0 1E-3
t(s) 1E-2 1E-1 1E+0
Fig. 5: Reverse recovery charges versus dIF/dt
Fig. 6: Reverse recovery current versus dIF/dt
Qrr(C) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1
IF=IF(av) 90% confidence Tj=125C
IRM(A) 3.0 2.5 2.0 1.5 1.0
dIF/dt(A/s) 0.2 0.5 1.0 2.0 5.0
IF=IF(av) 90% confidence Tj=125C
0.5 0.0 0.1 0.2
dIF/dt(A/s) 0.5 1.0 2.0 5.0
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DTV1500LFP
Fig. 7: Transient peak forward voltage versus dIF/dt Fig. 8: Forward recovery time versus dIF/dt
VFP(V) 50 45 40 35 30 25 20 15 10 5 0
IF=IF(av) 90% confidence Tj=125C
tfr(ns) 700 650 600 550 500 450 400 350 300 250 200
IF=IF(av) 90% confidence Tj=125C Vfr=3V
dIF/dt(A/s) 0 20 40 60 80 100 120 140
dIF/dt(A/s) 0 20 40 60 80 100 120 140
Fig. 9: Dynamic parameters versus junction temperature
Fig. 10: Junction capacitance versus reverse voltage applied (typical values)
VFP,IRM,Qrr[Tj]/VFP,IRM,Qrr[Tj=125C] 1.2 1.0 0.8
VFP
C(pF) 50
Tj=25C F=1MHz
10
0.6 0.4 0.2 0.0 0
IRM
Qrr
Tj(C) 20 40 60 80 100 120 140
VR(V) 1 1 10 100 200
Fig. 11: Relative variation of thermal impedance junction to case versus pulse duration
K=[Zth(j-c)/Rth(j-c)] 1.0
= 0.5
0.5
= 0.2 = 0.1
0.2
Single pulse
T
t(s) 0.1 1E-2 1E-1 1E+0
=tp/T
tp
1E+1
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DTV1500LFP
PACKAGE DATA TO-220FPAC DIMENSIONS REF.
A H B
Millimeters Min. Max. 4.4 4.6 2.5 2.7 2.5 2.75 0.45 0.70 0.75 1 1.15 1.70 4.95 5.20 2.4 2.7 10 10.4 16 Typ. 28.6 30.6 9.8 10.6 2.9 3.6 15.9 16.4 9.00 9.30 3.00 3.20
Inches Min. Max. 0.173 0.181 0.098 0.106 0.098 0.108 0.018 0.027 0.030 0.039 0.045 0.067 0.195 0.205 0.094 0.106 0.393 0.409 0.63 Typ. 1.126 1.205 0.386 0.417 0.114 0.142 0.626 0.646 0.354 0.366 0.118 0.126
Dia L6 L2 L3 L5 D F1 L4 L7
F G1 G
E
A B D E F F1 G G1 H L2 L3 L4 L5 L6 L7 Dia.
Type DTV1500LFP
s
Marking DTV1500LFP
Package TO-220FPAC
Weight 1.8g
Base qty 50
Delivery mode Tube
s
s
s
s
Cooling method: C Epoxy meets UL94-V0 Torquevalue: 0.55 m.Ntyp (0.7m.Nmax) Electrical Isolation: 2000V DC Capacitance: 12pF
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5

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