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Bulletin I2135 rev. D 03/99
SAFEIR Series 25TTS..FP
PHASE CONTROL SCR TO-220 FULLPAK
Description/Features
The 25TTS..FP SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 C junction temperature. Typical applications are in input rectification (soft start) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines. Fully isolated package (VINS = 2500 VRMS) UL E78996 approved
VT ITSM
< 1.25V @ 16A = 300A
VRRM 800 to 1600V
Output Current in Typical Applications Applications
Capacitive input filterTA = 55C,T J = 125C, common heatsink of 1C/W
Single-phase Bridge
18
Three-phase Bridge
22
Units
A
Major Ratings and Characteristics Characteristics
IT(AV) Sinusoidal waveform IRMS VRRM/ VDRM ITSM VT dv/dt di/dt T
J
Package Outline
25TTS..FP Units
16 A
25 up to 1600 300 @ 16 A, TJ = 25C 1.25 500 150 - 40 to 125
A V A V V/s A/s C
TO-220 FULLPAK
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1
25TTS..FP SAFEIR Series
Bulletin I2135 rev. D 03/99
Voltage Ratings
VRRM, maximum Part Number peak reverse voltage V
25TTS08FP 25TTS12FP 25TTS16FP 800 1200 1600
VDRM , maximum peak direct voltage V
800 1200 1600
IRRM/IDRM 125C mA
10
Absolute Maximum Ratings
Parameters
IT(AV) IRMS ITSM Max. Average On-state Current Max. RMS On-state Current Max.Peak One Cycle Non-Repetitive Surge Current I2t Max. I2t for fusing
25TTS..FP Units
16 25 300 350 450 630 A 2s A
Conditions
@ TC = 85 C, 180 conduction half sine wave
10ms Sine pulse, rated VRRMapplied 10ms Sine pulse, no voltage reapplied 10ms Sine pulse, rated VRRMapplied 10ms Sine pulse, no voltage reapplied A s
2
I t
2
Max. I t for fusing
2
6300 1.25 12.0 1.0 0.5 10 Typ. -100 Max. 100 150
t = 0.1 to 10ms, no voltage reapplied @ 16A, TJ = 25C TJ = 125C
VTM rt
Max. On-state Voltage Drop On-state slope resistance
V m V mA
VT(TO) Threshold Voltage IRM/IDM Max.Reverse and Direct Leakage Current IH Holding Current
TJ = 25 C TJ = 125 C
VR = rated VRRM/ VDRM
Anode Supply = 6V, Resistive load, Initial I T=1A mA 25TTS08FP, 25TTS12FP 25TTS16FP mA V/s A/s Anode Supply = 6V, Resistive load
IL
Max. Latching Current
200 500 150
dv/dt Max. Rate of Rise of off-state Voltage di/dt Max. Rate of Rise of turned-on Current
2
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25TTS..FP SAFEIR Series
Bulletin I2135 rev. D 03/99
Triggering
Parameters
PGM Max. peak Gate Power PG(AV) Max. average Gate Power + IGM Max. paek positive Gate Current - VGM Max. paek negative Gate Voltage IGT Max. required DC Gate Current to trigger
25TTS..FP Units
8.0 2.0 1.5 10 60 45 20 A V mA W
Conditions
Anode supply = 6V, resistive load, TJ = - 10C Anode supply = 6V, resistive load, TJ = 25C Anode supply = 6V, resistive load, TJ = 125C
VGT
Max. required DC Gate Voltage to trigger
2.5 2.0 1.0
V
Anode supply = 6V, resistive load, TJ = - 10C Anode supply = 6V, resistive load, TJ = 25C Anode supply = 6V, resistive load, TJ = 125C TJ = 125C, VDRM = rated value
VGD IGD
Max. DC Gate Voltage not to trigger Max. DC Gate Current not to trigger
0.25 2.0 mA
TJ = 125C, VDRM = rated value
Switching
Parameters
tgt trr tq
Typical turn-on time Typical reverse recovery time Typical turn-off time
25TTS..FP Units
0.9 4 110 s TJ = 25C
Conditions
TJ = 125C
Thermal-Mechanical Specifications
Parameters
TJ T stg Max. Junction Temperature Range Max. Storage Temperature Range
25TTS..FP Units
- 40 to 125 - 40 to 125 1.5 62 1.5 2 (0.07) Min. Max. 6 (5) 12 (10) g (oz.) Kg-cm (Ibf-in) (94/V0) C/W C
Conditions
RthJC Max. Thermal Resistance Junction to Case RthJA Max. Thermal Resistance Junction to Ambient RthCS Typ. Thermal Resistance Case to Heatsink wt T Approximate Weight Mounting Torque
DC operation
Mounting surface, smooth and greased
Case Style
TO-220 FULLPAK
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25TTS..FP SAFEIR Series
Bulletin I2135 rev. D 03/99
Maximum Allowable Case Temperature (C)
Maximum Allowable Case Temperature (C) 130 120 110 100 90 80 70 0 5 10 15 20 Average On-state Current (A) 30 60 90 120 180
Conduction Angle
130 120 110
Conduction Period
25TTS.. Series R thJC (DC) = 1.5 C/W
25TTS.. Series R thJC (DC) = 1.5 C/W
100 90 30 80 70 0 5 10 15 20 25 30 Average On-state Current (A) 60 90 120
180
DC
Fig. 1 - Current Rating Characteristics
Maximum Average On-state Power Loss (W)
Maximum Average On-state Power Loss (W) 25 180 120 90 60 30 RMS Limit
Fig. 2 - Current Rating Characteristics
35 30 25 20 RMS Limit 15 10 5 0 0 5 10 15 20 25 30 Average On-state Current (A)
Conduction Period
20
15
DC 180 120 90 60 30
10
Conduction Angle
5
25TTS.. Series T J = 125C
25TTS.. Series T J = 125C
0 0 4 8 12 16 20 Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
Fig. 4 - On-state Power Loss Characteristics
400 350 300 250 200 150 25TTS.. Series 100 0.01
Peak Half Sine Wave On-state Current (A)
350
300
At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage Reapplied Rated VRRM Reapplied
250
200 25TTS.. Series 150 1 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
0.1 Pulse Train Duration (s)
1
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
4
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25TTS..FP SAFEIR Series
Bulletin I2135 rev. D 03/99
1000 Instantaneous On-state Current (A)
100
TJ = 25C 10 T J= 125C
25TTS.. Series 1 0 1 2 3 4 5 Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
Transient T hermal Impedance Z thJC (C/W) 10
1
D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08
Steady State Value (DC Operation)
0.1 Single Pulse 25TTS.. Series 0.01 0. 0001 0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
100 Instantaneous Gate Voltage (V)
Rectangular gate pulse a)Recommended load line for rated di/dt: 10 V, 20 ohms tr = 0.5 s, tp >= 6 s b)Recommended load line for <= 30% rated di/dt: 10 V, 65 ohms tr = 1 s, tp >= 6 s
(1) PGM = 40 W, tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms (a) (b)
10
TJ = -10 C
TJ = 25 C
TJ = 125 C
1
(4)
(3)
(2)
(1)
VGD IGD
0.1 0.001 0.01
25TTS.. Series 0.1 1
Frequency Limited by PG(AV) 10 100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
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25TTS..FP SAFEIR Series
Bulletin I2135 rev. D 03/99
Outline Table
10.6 10.4 H OLE o 3.4 3.1 2.8 2.6
7.1 6.7 16.4 15.4 16.0 15.8
3.7 3 .2
10
3.3
3.1
2.54 TYP.
0.9 0.7 2.54 TYP.
0.48 0.44 2.85 2.65
1.4 1.3
1.15 TYP. 1.05
R0.7 (2 PLACES) R 0.5
4.8 4.6
Dimensions in millimeters (and inches)
5 0.5
5 0.5
Ordering Information Table
Device Code
25
1
T
2
T
3
S
4
16
5
FP
6
2 (A)
1 2 3 4 5 6
-
Current Rating, RMS value Circuit Configuration: T = Single Thyristor Package: T = TO-220AC Type of Silicon: S = Converter Grade Voltage code: Code x 100 = V RRM TO-220 FULLPAK 08 = 800V 12 = 1200V 16 = 1600V
1 (K) (G) 3
6
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13.7 13.5
25TTS..FP SAFEIR Series
Bulletin I2135 rev. D 03/99
WORLD HEADQUARTERS: EUROPEAN HEADQUARTERS: IR CANADA: IR GERMANY: IR ITALY: IR FAR EAST: IR SOUTHEAST ASIA: IR TAIWAN:
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Fax-On-Demand: +44 1883 733420
Data and specifications subject to change without notice.
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