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TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V (D-S) MOSFETs PRODUCT SUMMARY Part Number TN0601L VN0606L VN66AFD 60 V(BR)DSS Min (V) rDS(on) Max (W) 1.8 @ VGS = 10 V 3 @ VGS = 10 V 3 @ VGS = 10 V VGS(th) (V) 0.5 to 2 0.8 to 2 0.8 to 2.5 ID (A) 0.47 0.33 1.46 FEATURES D D D D D Low On-Resistance: 1.2 W Low Threshold: <1.6 V Low Input Capacitance: 35 pF Fast Switching Speed: 9 ns Low Input and Output Leakage BENEFITS D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage APPLICATIONS D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays TO-226AA (TO-92) S 1 Device Marking Front View TN0601L "S" TN 0601L xxyy VN0606L S TO-220SD (Tab Drain) 1 Device Marking Front View VN66AFD G 2 VN66AFD "S" xxyy "S" = Siliconix Logo xxyy = Date Code Top View VN66AFD G 2 D 3 "S" VN 0606L xxyy "S" = Siliconix Logo xxyy = Date Code D 3 Top View TN0601L VN0606L ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. b. Reference case for all temperature testing. Document Number: 70201 S-04279--Rev. E, 16-Jul-01 www.vishay.com TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA RthJC TJ, Tstg TN0601L 60 "20 0.47 0.29 1.5 0.8 0.32 156 VN0606L 60 "30 0.33 0.21 1.6 0.8 0.32 156 VN66AFDb 60 "30 1.46 0.92 3 15 6 Unit V A W 8.3 -55 to 150 _C/W _ _C 11-1 TN0601L, VN0606L, VN66AFD Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits TN0601L VN0606L VN66AFD Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Symbol Test Conditions Typa Min Max Min Max Min Max Unit V(BR)DSS VGS(th) VGS = 0 V, ID = 10 mA VDS = VGS, ID = 0.25 mA VDS = VGS, ID = 1 mA VDS = 0 V, VGS = "30 V 70 1.6 1.7 60 0.5 2 60 60 V 0.8 2 "100 0.8 2.5 "100 "500 nA Gate-Body Leakage IGSS TC = 125_C VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V TJ = 125_C "10 10 500 1 100 Zero Gate VoltageDrain Current IDSS VDS = 48 V, VGS = 0 V TJ = 125_C TC = 125_C 1 m mA 10 0.5 2.4 4 2 3.8 2.3 1.2 2.3 1.3 2.5 350 0.3 200 170 170 mS 1.8 3 6 3 6 0.25 1 5 3 6 5 W 1.5 1.5 A On-State Drain Currentb VDS = 10 V, VGS = 4.5 V ID(on) VDS = 10 V, VGS = 10 V VGS = 3.5 V, ID = 0.04 A VGS = 4.5 V, ID = 0.25 A TJ = 125_C Drain-Source On-Resistanceb VGS = 5 V, ID = 0.3 A rDS(on) VGS = 10 V, ID = 0.5 A TJ = 125_C VGS = 10 V, ID = 1 A TC = 125_C Forward Transconductanceb Common Source Output Conductanceb gfs gos VDS = 10 V, ID = 0.5 A VDS = 10 V, ID = 0.1 A Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 25 V, VGS = 0 V, f = 1 MHz 35 25 6 60 50 10 50 40 10 50 40 10 pF Switchingc Turn-On Time Turn-Off Time tON tOFF VDD = 25 V, RL = 23 W ID ^ 1 A, VGEN = 10 V RG = 25 W 8 9 15 15 10 10 15 ns 15 VNDQ06 Notes a. For DESIGN AID ONLY, not subject to production testing.. b. Pulse test: PW v 300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 Document Number: 70201 S-04279--Rev. E, 16-Jul-01 TN0601L, VN0606L, VN66AFD Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics 2.0 VGS = 10 V 1.6 6V 1.2 5V 0.8 4V 0.4 3V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 0 0 0.4 0.8 1.2 1.6 2.0 VDS - Drain-to-Source Voltage (V) ID - Drain Current (mA) ID - Drain Current (A) 8V 7V 80 2.6 V 60 100 Output Characteristics for Low Gate Drive VGS = 10 V 2.8 V 40 2.4 V 2.2 V 20 2.0 V 1.8 V Transfer Characteristics 1.0 TJ = -55_C VDS = 15 V 125_C ID - Drain Current (A) 0.6 2.8 25_C 2.4 0.8 rDS(on) - On-Resistance ( ) 2.0 1.6 1.2 0.8 0.4 0 0 2 4 6 8 10 VGS - Gate-Source Voltage (V) 0 0 On-Resistance vs. Gate-to-Source Voltage 1.0 A 0.5 A 0.4 ID = 0.1 A 0.2 4 8 12 16 20 VGS - Gate-Source Voltage (V) On-Resistance vs. Drain Current 2.5 rDS(on) - Drain-Source On-Resistance ( ) rDS(on) - Drain-Source On-Resistance ( ) (Normalized) 2.25 Normalized On-Resistance vs. Junction Temperature VGS = 10 V 2.00 I D = 1.0 A 1.75 0.2 A 1.50 1.25 1.00 0.75 0.50 2.0 1.5 VGS = 10 V 1.0 0.5 0 0 0.4 0.8 1.2 1.6 2.0 -50 -10 30 70 110 150 ID - Drain Current (A) TJ - Junction Temperature (_C) Document Number: 70201 S-04279--Rev. E, 16-Jul-01 www.vishay.com 11-3 TN0601L, VN0606L, VN66AFD Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region 10 VDS = 5 V 100 TJ = 150_C ID - Drain Current (mA) 1 C - Capacitance (pF) 80 120 VGS = 0 V f = 1 MHz Capacitance 60 C iss C oss 20 C rss 0 25_C 0.1 40 125_C 0.01 0.5 1.0 1.5 -55_C 2.0 0 10 20 30 40 50 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Gate Charge 15.0 I D = 1.0 A VGS - Gate-to-Source Voltage (V) 12.5 VDS = 30 V t - Switching Time (ns) 50 100 Load Condition Effects on Switching VDD = 25 V RG = 25 W VGS = 0 to 10 V 10.0 20 10 td(off) 5 tr td(on) 2 1 tf 7.5 5.0 VDS = 48 V 2.5 0 0 100 200 300 400 500 600 Qg - Total Gate Charge (pC) 0.1 1 ID - Drain Current (A) 10 Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 Notes: PDM 0.01 Single Pulse 0.01 0.1 0.5 1 5 10 50 100 500 2. Per Unit Base = RthJA = 156_C/W 3. TJM - TA = PDMZthJA(t) 1K 5K 10 K t1 - Square Wave Pulse Duration (sec) www.vishay.com 11-4 Document Number: 70201 S-04279--Rev. E, 16-Jul-01 |
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