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VN10K N-Channel Enhancement-Mode Vertical DMOS FETs
Ordering Information
Standard Commercial Devices
BVDSS / BVDGS 60V RDS(ON) (max) 5.0 ID(ON) (min) 0.75A Order Number / Package TO-92 VN10KN3
Features
Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Applications
Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
Package Option
Absolute Maximum Ratings
Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. BVDSS BVDGS 30V -55C to +150C 300C
SGD
TO-92
Note: See Package Outline section for dimensions.
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
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VN10K
Thermal Characteristics
Package TO-92 ID (continuous)1,2 0.31A ID (pulsed) 1.0A Power Dissipation @ TC = 25C 1.0W
jc
ja
IDR 0.31A
IDRM 1.0A
C/W
125
C/W
170
Notes: 1. ID (continuous) is limited by max rated Tj. 2. VN0106N3 can be used if an ID (continuous) of 0.5 is needed.
Electrical Characteristics (@ 25C unless otherwise specified)
Symbol BVDSS VGS(th) VGS(th) IGSS IDSS ID(ON) RDS(ON) RDS(th) GFS CISS COSS CRSS t(ON) t(OFF) VSD trr Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current ON-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(th) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Time Turn-OFF Time Diode Forward Voltage Drop Reverse Recovery Time 0.8 160 100 48 16 2 60 25 5 10 10 V ns ns VDD = 15V, ID = 0.6A, RGEN = 25 VGS = 0V, ISD = 0.5A VGS = 0V, ISD = 0.5A pF VDS = 25V, VGS = 0V f = 1 MHz 0.7 0.75 7.5 5.0 Min 60 0.8 -3.8 100 10 500 2.5 Typ Max Unit V V mV/C nA A A A %/C m Conditions VGS = 0V, ID = 100A VGS = VDS , ID = 1mA VGS = VDS, ID = 1mA VGS = 15V, VDS = 0V VGS = 0V, VDS = 45V VGS = 0V, VDS = 45V, TA 125C VGS = 10V, VDS = 10V VGS = 5V, ID = 0.2A VGS = 10V, ID = 500mA VGS = 10V, ID = 500mA, VDS = 10V, ID = 500mA
Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
90% INPUT
0V
PULSE GENERATOR
Rgen
10%
t(ON)
t(OFF) tr td(OFF) tF
td(ON)
VDD
10%
10%
INPUT
OUTPUT
0V
90%
90%
2
VDD
RL OUTPUT
D.U.T.
VN10K
Typical Performance Curves
Output Characteristics
1.0 VGS =10V 0.8 0.8 1.0 VGS =10V
Saturation Characteristics
7V
9V 8V 6V
6V
ID (amperes)
0.6
ID (amperes)
0.6
5V
0.4
5V
0.4
4V
0.2 0.2
4V
3V
0 0 10 20 30
3V
0 40 50 0 2 4 6
2V
2V
8 10
VDS (volts) Transconductance vs. Drain Current
250 2
VDS (volts) Power Dissipation vs. Case Temperature
200
GFS (m )
PD (watts)
150
TC = 25C
Output Voltage (volts)
ID (amperes)
0.1
Input Voltage (volts)
1
TO-92
100
50
VDS = 10V 300s, 2% Duty Cycle Pulse Test
0 0 200 400 600 800 1000
0 0 25 50 75 100 125 150
ID (mA) Maximum Rated Safe Operating Area
10 10
TC (C) Switching Waveform
5
1.0
0
TO-92 (DC) 15 10 5 0
0.01 1 10 100 1000 0 10 20 30 40 50
VDS (volts)
t - Time(ns)
3
VN10K
Typical Performance Curves
BVDSS Variation with Temperature
100 1.1
On-Resistance vs. Gate-to-Source Voltage
VDS = 0.1V
BVDSS (normalized)
RDS(ON) (ohms)
1.0
10
0.9 1 -50 0 50 100 150 1 10 100
Tj (C) Transfer Characteristics
1.0 VDS = 10V 300s, 2% DUTY CYCLE PULSE TEST 1.0 VDS = 25V 80s, 1% DUTY CYCLE PULSE TEST
VGS (Volts) Output Conductance vs Drain Current
0.8
ID (amperes)
GFS (mhos)
0.6
0.1
REDUCTION DUE TO HEATING
0.4
0.2
0 0 2 4 6 8 10
0.01 0.01 0.1 1.0
VGS (volts) Capacitance vs. Drain-to-Source Voltage
50 250
ID (amperes) Transconductance vs Gate-Source Voltage
VDS = 10V 3000s, 2% DUTY CYCLE PULSE TEST
CISS
40 200
C (picofarads)
30
Gfs (m )
150
20
100
COSS
10 50
CRSS
0 0 10 20 30 40 50 0 0 2 4 6 8 10
VDS (volts)
VGS (volts)
11/12/01
(c)2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
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1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com

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