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| LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode MMBV105GLT1 This device is designed in the surface Mount package for general frequency control and tuning applications.It provides solid-state reliability in replacement of mechanical tuning methods. * Controlled and Uniform Tuning Ration 1 2 3 3 CATHODE 1 ANODE CASE 318-08, STYLE 8 SOT- 23 (TO-236AB) MAXIMUM RATINGS(EACH DIODE) Rating Reverse Voltage Forward Current Device Dissipation @T A = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ T stg Value 30 200 225 1.8 +125 -55 to +150 Unit Vdc mAdc mW mW/C C C DEVICE MARKING MMBV105GLT1=M4E ELECTRICAL CHARACTERISTICS(TA=25C unless otherwise noted) Characteristic Reverse Breakdown Voltage ( I R=10Adc) Reverse Voltage Leakage Current ( V R =28Vdc) Symbol V (BR)R IR Min 30 -- Max -- 50 Unit Vdc nAdc Device Type CT V R =25Vdc,f =1.0MHz pF Min Max 2.8 Q V R =3.0Vdc f=50MHz Typ 250 CR C 3/ C 25 f=1.0MHz Min 4.0 Max 6.5 MMBV105GLT1 1.5 MMBV105GLT-1/2 LESHAN RADIO COMPANY, LTD. MMBV105GLT1 TYPICAL CHARACTERISTICS 20 1000 C T , DIODE CAPACITANCE (pF) 18 Q , FIGURE OF MERIT 16 14 12 10 8.0 6.0 4.0 2.0 0 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 V R =3Vdc TA = 25C 100 f = 1.0MHz T A = 25C 10 10 100 1000 V R , REVERSE VOLTAGE (VOLTS) f , FREQUENCY ( MHz ) Figure 1. Diode Capacitance Figure 2. Figure of Merit CT,DIODECAPACITANCE(NORMALIZED) 1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 -75 -50 -25 0 +25 +50 +75 +100 +125 V R= 3.0Vdc f = 1.0MHz T A , AMBIENT TEMPERATURE (C) Figure 3. Diode Capacitance MMBV105GLT-2/2 |
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