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LESHAN RADIO COMPANY, LTD.
Silicon Epicap Diode
Designed for general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods. * High Q with Guaranteed Minimum Values at VHF Frequencies * Controlled and Uniform Tuning Ratio * Available in Surface Mount Package
MMBV109LT1 MBV109T1 MV209
26-32 pF VOLTAGE VARIABLE CAPACITANCE DIODES
3
3 CATHODE
1 ANODE
1 2
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Device Dissipation @T A = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol MBV109T1 VR IF PD 280 2.8 TJ T stg Value MMBV109LT1 30 200 200 2.0 +125 -55 to +150 Unit MV209 Vdc mAdc 200 1.6 mW mW/C C C
CASE 318-08, STYLE 6 SOT- 23 (TO-236AB)
DEVICEMARKING
MBV109T1= J4A, MMBV109LT1 =M4A, MV209 = MV209
ELECTRICAL CHARACTERISTICS(TA=25C unless otherwise noted)
Characteristic Reverse Breakdown Voltage ( I R = 10 Adc) Reverse Voltage Leakage Current ( V R = 25Vdc) Diode Capacitance Temperature Coefficient (V R = 3.0 Vdc, f = 1.0 MHz) Symbol V (BR)R IR TC C Min 30 -- -- Typ -- -- 300 Max -- 0.1 -- Unit Vdc mAdc ppm/C
C T Diode Capacitance VR =3.0Vdc, f =1.0MHz pF Device Type MBV109T1, MMBV109LT1, MV209 Min 26 Nom 29 Max 32
Q, Figure of Merit V R = 3.0Vdc f = 50MHz Min 200
CR, Capacitance Ratio C3 / C 25 f=1.0MHz (Note 1) Min 5.0 Max 6.5
1. C R is the ratio of C t measured at 3 V dc divided by C t measured at 25 Vdc. MMBV109LT1 is also available in bulk packaging. Use MMBV109L as the device title to order this device in bulk.
MBV109. MMBV109*. MV209*-1/2
LESHAN RADIO COMPANY, LTD.
MBV109T1 MMBV109LT1 MV209
40 36
1000
C T , CAPACITANCE (pF)
28 24 20 16 12 8 4 0 1 3 10 30 100
Q , FIGURE OF MERIT
32
100
10 10 100 1000
V R , REVERSE VOLTAGE (VOLTS)
f , FREQUENCY ( MHz )
Figure 1. Diode Capacitance
Figure 2. Figure of Merit
100
CT,DIODECAPACITANCE(NORMALIZED)
1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 -75 -50 -25 0 +25 +50 +75 +100 +125
I R , REVERSE CURRENT (nA)
20 10 2.0 1.0 0.2 0.1 0.02 0.01 0.002 0.001
-60
-40
-20
0
20
40
60
80
100
120
140
T A , AMBIENT TEMPERATURE (C)
T A , AMBIENT TEMPERATURE (C)
Figure 3 . Leakage Current
Figure 4. Diode Capacitance
NOTES ON TESTING AND SPECIFICATIONS 1. C R is the ratio of C t measured at 3.0 Vdc divided by C t measured at 25 Vdc.
MBV109. MMBV109*. MV209*-2/2

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